Synchronous first-in/first-out block memory for a field programmable gate array
View Patent ↗The present invention comprises a field programmable gate array that has a plurality of dedicated first-in/first-out memory logic components. The field programmable gate array includes a plurality of synchronous random access memory blocks that are coupled to a plurality of dedicated first-in/first-out memory logic components and a plurality of random access memory clusters that are programmably coupled to the plurality of dedicated first-in/first-out memory logic components and to the plurality of synchronous random access memory blocks.
1. A field programmable gate array comprising:
a plurality of programmable logic cells;
at least one random access memory cluster that stores data;
a read-data bus associated with each at least one random access memory cluster;
a write-data bus associated with each at least one random access memory cluster;
a read-address bus associated with each at least one random access memory cluster;
a write-address bus associated with each at least one random access memory cluster;
write-address control lines associated with each at least one random access memory cluster;
read-address control lines associated with each at least one random access memory cluster;
at least one random access memory control block that controls transmission of data to and from the at least one random access memory cluster, each at least one random access memory control block coupled to the read-data bus, the write-data bus, the read-address bus, the write-address bus, the write-address control lines, and the read-address control lines of the at least one random access memory clusters;
at least one dedicated first-in/first-out memory logic component, each at least one dedicated first-in/first-out memory logic component coupled to the read-data bus, the write-data bus, the read-address bus, the write-address bus, the write-address control lines, and the read-address control lines; and
dedicated programmable logic configured by programmable elements to grant control of the read-address bus, the write-address bus, the write-address control lines, and the read-address control lines to one of the at least one dedicated first-in/first-out memory logic component and the at least one random access memory control block to which the read-address bus, the write-address bus, the write-address control lines, and the read-address control lines are coupled.
2. The field programmable gate array of claim 1 wherein each of the at least one dedicated first-in/first-out memory components comprises:
an address counter;
write-enable logic;
memory-full logic coupled to the at least one random access memory control block; and
memory-empty logic coupled to the at least one random access memory control block.
3. The field programmable gate array of claim 1 , wherein each of the at least one dedicated first-in/first-out memory component further comprises:
memory-almost-full logic coupled to the at least one random access memory control block; and
memory-almost-empty logic coupled to the at least one random access memory control block.
4. The field programmable gate array of claim 1 wherein the programmable elements comprise MOS transistors.
5. The field programmable gate array of claim 1 wherein the programmable elements comprise flash memory cells.
6. The field programmable gate array of claim 1 wherein the programmable elements comprise antifuses.
7. The field programmable gate array of claim 1 including a plurality of random access memory clusters, random access memory control blocks, dedicated first-in/first-out memory logic components, and dedicated programmable logic, each random access memory cluster, random access memory control block, and dedicated first-in/first-out memory logic component coupled to a different set including one read-data bus, one write-data bus, one read-address bus, one write-address bus, one set of write-address control lines, and one set of read-address control lines.