Chemical vapor deposition of high conductivity, adherent thin films of ruthenium
View Patent ↗A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.
1. A method for depositing a ruthenium thin film onto a substrate, said method comprising:
(a) depositing a nucleation layer comprising ruthenium onto the substrate by chemical vapor deposition, wherein the nucleation layer is deposited using a nucleation layer mixture containing a first ruthenium precursor under nucleation layer CVD conditions; and
(b) depositing an upper layer comprising ruthenium onto the nucleation layer by chemical vapor deposition, wherein the upper layer is deposited using an upper layer mixture containing a second ruthenium precursor, different from the first, under upper layer CVD conditions.
2. The method of claim 1 , wherein the first and second ruthenium precursors are selected from the group consisting of ruthenocenes, ruthenium β-diketonates , fluorinated ruthenium β-diketonates, ruthenium carbonyls, ruthenium oxides and ruthenium halides.
3. The method of claim 1 , wherein the first ruthenium precursor is selected from the group consisting of ruthenium β-diketonates, fluorinated ruthenium β-diketonates, ruthenium carbonyls, and ruthenium oxides.
4. The method of claim 1 , wherein the first ruthenium precursor is a ruthenium β-diketonate and the second ruthenium precursor is a ruthenocene.
5. The method of claim 4 , wherein the ruthenocene has the formula (Cp′)Ru(Cp″), where Cp′ and Cp″ can be same or different and have the general formula:
where R 1 -R 5 are independently selected from the group consisting of H, F, and straight-chained or branched C 1 -C 5 alkyl groups.
6. The method of claim 4 , wherein the ruthenocene comprises Ru(EtCp) 2 or Ru(Cp) 2 .
7. The method of claim 4 , wherein the ruthenium β-diketonate has the formula Ru(β-diketonate) 3 , where β-diketonate has the general formula:
where R 1 and R 2 are independently selected from the group consisting of H, F, straight-chained or branched C 1 -C 5 alkyl groups, and fluorine-substituted straight-chained or branched C 1 -C 5 alkyl groups.
8. The method of claim 4 , wherein the ruthenium β-diketonate comprises a compound selected from the group consisting of: tris(2,4-pentanedionate) ruthenium (Ru(acac) 3 ); tris(1,1,1-trifluoro-2,4-pentanedionate) ruthenium (Ru(tfac) 3 ); tris(2,2,6,6-tetramethyl-3,5-heptanedionate) ruthenium (Ru(thd) 3 ); tris(1,1,1,5,5,5-hexafluoro-2,4-pentanedionate) ruthenium (Ru(hfac) 3 ); tris(2,2,7-tetramethyl-3,5-octanedionato) ruthenium (Ru(tod) 3 ); tris (6,6,7,7,8,8,8-heptafluoro-2,2-dimethyl-3,5-octanedionato) ruthenium (Ru(fod) 3 ); and tris(2,4-octanedionato) ruthenium (Ru(od) 3 ).
9. The method of claim 4 , wherein the ruthenium β-diketonate comprises Ru(thd) 3 or Ru(hfac) 3 .
10. The method of claim 1 wherein the deposited nucleation layer comprises ruthenium metal.
11. The method of claim 1 , wherein the nucleation layer CVD conditions include a temperature of from about 250° C. to about 340° C. and a flow rate of the first ruthenium precursor of from about 15 μmol/min to about 30 μmol/min and the co-reactant gas is oxygen and is present in a concentration of from about 80 mole % to about 95 mole % and the upper layer CVD conditions include a temperature of from about 250° C. to and about 400° C. and a flow rate of the second ruthenium precursor of from about 5 μmol/min to about 20 μmol/min and from about 1 mole % to about 10 mole % of the second ruthenium precursor/co-reactant gas mixture comprises oxygen.
12. The method of the claim 11 , wherein second co-reactant gas comprises an oxygen:hydrogen gas mixture.
13. The method of claim 12 , wherein the mole ratio of oxygen to hydrogen is from about 1:1 to about 1:3.
14. The method of claim 1 wherein the flow of the first ruthenium precursor is sufficient to maintain a surface reaction rate-limited deposition and the flow of the second ruthenium precursor is less than that needed to maintain a surface reaction rate-limited deposition.
15. The method of claim 14 , wherein the nucleation layer CVD conditions include a temperature of from about 250° C. to about 340° C. and the first co-reactant gas comprises more than 30 mole % of the first ruthenium precursor/co-reactant gas mixture.
16. The method of claim 1 , wherein the upper layer CVD conditions are more reducing than the nucleation layer CVD conditions.