Integrated circuit employing variable thickness film

1. An integrated circuit comprising:

a substrate including a support structure, a dielectric layer having a substantially continuous planar bottom surface forming an interface with said support structure, and a variable thickness film, said variable thickness film being a single semiconductor layer and having a substantially continuous planar top surface;

at least one recess within a bottom surface of the variable thickness film, wherein the dielectric layer does not only line the at least one recess but completely fills the at least one recess, and wherein the dielectric layer separates the variable thickness film from said support structure at all points with the dielectric layer being directly on the support structure and the variable thickness film being directly on the dielectric layer;

at least one gate over the variable thickness film, the at least one gate situated at the substantially continuous planar top surface of the variable thickness film, wherein said at least one recess being directly under and aligned with said at least one gate, and a width of said at least one recess is substantially equal to a width of said at least one gate;

at least one channel and at least one source/drain within the variable thickness film, wherein said variable thickness film substantially surrounds said at least one source/drain, wherein the at least one source/drain includes a strained semiconductor-containing film situated in a trench in the variable thickness film;

wherein said at least one channel is located within a first thickness region of said variable thickness film having a first thickness between said substantially continuous planar top surface of said variable thickness film and a bottom surface of said at least one recess;

wherein said at least one source/drain is located within a second thickness region of said variable thickness film having a second thickness between a bottom surface of said at least one source/drain and a bottom surface of said variable thickness film, said first thickness region is thinner than said second thickness region.

2. The integrated circuit of claim 1 wherein:

the at least one channel is located over the at least one recess.

3. The integrated circuit of claim 1 further comprising:

an electronic system or a subsystem with the integrated circuit.

4. The integrated circuit of claim 1 wherein:

the at least one gate includes an NFET gate or a PFET gate;

the at least one channel includes an NFET channel or a PFET channel; and

the at least one source/drain includes an NFET source/drain or a PFET source/drain.

5. The integrated circuit of claim 1 wherein:

the at least one source/drain includes strained material.

6. The integrated circuit of claim 1 wherein:

the at least one source/drain includes strained silicon germanium or strained silicon carbide.

7. The integrated circuit of claim 1 wherein:

the integrated circuit includes a multi-electrode device.

8. The integrated circuit of claim 1 wherein:

the integrated circuit includes a multi-electrode device formed adjacent another multi-electrode device.