IP Library Granted Patent US 8,305,833
Granted Patent B2
US 8,305,833 · App. 11/809,244 · Granted Nov 6, 2012

Memory chip architecture having non-rectangular memory banks and method for arranging memory banks

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,305,833
App. No.
11/809,244
Granted
Nov 6, 2012
Kind
B2
Abstract

A semiconductor memory device having semiconductor memory chips, each semiconductor memory chip includes a plurality of memory banks capable of independently to be accessed, each memory bank having a plurality of memory blocks, wherein at least two memory blocks, which are neighbored each other in the same memory bank, have the different number of unit memory blocks, so that each bank has a non-rectangular shape.

Claims (17)

1. A semiconductor memory device comprising:

a plurality of memory banks capable of independently being accessed, each memory bank having a plurality of memory blocks, wherein each memory bank has a non-rectangular shape; and

a plurality of pads and control blocks arranged in a vacant space formed between neighboring memory banks,

wherein at least two of the plurality of memory blocks, which are adjacent each other in the same memory bank, have different numbers of unit memory blocks, and wherein the non-rectangular shapes of the plurality of memory banks are arranged to be symmetric about a longitudinal axis of a semiconductor chip passing between the plurality of memory banks, or about a latitudinal axis of the semiconductor chip passing between the plurality of the memory banks.

2. The semiconductor memory device as recited in claim 1 , wherein each of the plurality of memory blocks includes a pair of X-decoder and Y-decoder capable of accessing one or more unit memory blocks within a memory block.

3. The semiconductor memory device as recited in claim 1 , wherein a total memory region of the semiconductor memory chip is divided into four memory banks, wherein the four memory banks are arranged in the first, second, third and fourth quadrants of the semiconductor memory chip, respectively.

4. The semiconductor memory device as recited in claim 3 , wherein each memory bank includes:

a first memory block having a first number of the unit memory blocks;

a second memory block having a second number of the unit memory blocks, which is smaller than that of the first memory blocks; and

a third memory block having the second number of unit memory blocks.

5. The semiconductor memory device as recited in claim 4 , wherein the first memory blocks of memory banks arranged in the second and third quadrants are arranged at a left-most region of the semiconductor memory chip and the first memory block of banks arranged in the first and fourth quadrants is arranged at a right-most region of the semiconductor memory chip.

6. The semiconductor memory device as recited in claim 1 , wherein the entire outer shape of the plurality of banks including the plurality of pads and control blocks is a rectangular shape.

7. The semiconductor memory device as recited in claim 1 , wherein the plurality of memory blocks comprises a first memory block having a first number of unit memory blocks and a second memory block having a second number of unit memory blocks less than the first number of unit memory blocks; and

wherein the vacant space is formed corresponding to a difference region between the first memory block and the second memory block.

8. The semiconductor memory device as recited in claim 1 , wherein the non-rectangular shapes of the plurality of memory banks are arranged to be symmetric about a longitudinal axis of the semiconductor chip passing between the plurality of memory banks, and about a latitudinal axis of the semiconductor chip passing between the plurality of the memory banks.

9. The semiconductor memory device as recited in claim 1 , wherein one half of the plurality of memory banks is located on a first side of the longitudinal axis, and one half of the plurality of memory banks is located on a second side of the longitudinal axis, opposite the first side.

10. The semiconductor memory device as recited in claim 9 , wherein one half of the plurality of memory banks is located on a first side of the latitudinal axis, and one half of the plurality of memory banks is located on a second side of the latitudinal axis, opposite the first side.

Assignments (9)
CHANGE OF NAME Recorded Aug 28, 2023
From: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
To: MOSAID TECHNOLOGIES INCORPORATED
Reel/Frame 064742/0988 →
RELEASE OF SECURITY INTEREST Recorded Nov 10, 2020
From: CPPIB CREDIT INVESTMENTS INC.
To: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
Reel/Frame 054371/0884 →
RELEASE OF U.S. PATENT AGREEMENT (FOR NON-U.S. GRANTORS) Recorded Oct 12, 2018
From: ROYAL BANK OF CANADA, AS LENDER
To: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
Reel/Frame 047645/0424 →
AMENDED AND RESTATED U.S. PATENT SECURITY AGREEMENT (FOR NON-U.S. GRANTORS) Recorded Aug 22, 2018
From: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
To: CPPIB CREDIT INVESTMENTS, INC.
Reel/Frame 046900/0136 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 22, 2015
From: CONVERSANT IP N.B. 868 INC.
To: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
Reel/Frame 036159/0386 →
U.S. PATENT SECURITY AGREEMENT (FOR NON-U.S. GRANTORS) Recorded Sep 9, 2014
From: CONVERSANT IP N.B. 868 INC.
To: CPPIB CREDIT INVESTMENTS INC., AS LENDER; ROYAL BANK OF CANADA, AS LENDER
Reel/Frame 033707/0001 →
RELEASE OF SECURITY INTEREST Recorded Aug 7, 2014
From: ROYAL BANK OF CANADA
To: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.; CONVERSANT IP N.B. 868 INC.; CONVERSANT IP N.B. 276 INC.
Reel/Frame 033484/0344 →
CHANGE OF NAME Recorded Mar 13, 2014
From: 658868 N.B. INC.
To: CONVERSANT IP N.B. 868 INC.
Reel/Frame 032439/0547 →
U.S. INTELLECTUAL PROPERTY SECURITY AGREEMENT (FOR NON-U.S. GRANTORS) - SHORT FORM Recorded Jan 10, 2012
From: 658276 N.B. LTD.; 658868 N.B. INC.; MOSAID TECHNOLOGIES INCORPORATED
To: ROYAL BANK OF CANADA
Reel/Frame 027512/0196 →