Granted Patent B2

US 7,887,693 · App. 11/821,206 · Granted Feb 15, 2011

Abstract

Claims (31)

1. An aqueous electroplating solution comprising:

a) at least one soluble copper salt;

b) an acid;

c) a source of halide ions; and

d) an additive system comprising:

i) a leveler comprising tetrakis(pyridinomethyl) Cu(II) phthalocyanine chloride;

ii) a suppressor comprising at least one high molecular weight polymer; and

iii) a brightener comprising at least one divalent sulfur compound.

2. The aqueous electroplating solution according to claim 1 , wherein the at least one soluble copper salt is selected from the group consisting of copper sulfate and copper oxide.

3. The aqueous electroplating solution according to claim 1 , wherein the acid comprises sulfuric acid.

4. The aqueous electroplating solution according to claim 1 , wherein the source of halide ions comprises a source of chloride ions selected from the group consisting of sodium chloride, potassium chloride, hydrochloric acid, and combinations of one or more of the foregoing.

5. The aqueous electroplating solution according to claim 1 , wherein the at least one high molecular weight polymer is selected from the group consisting of poly(ethylene glycol-propylene glycol) mono-butyl ether, polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, and combinations of one or more of the foregoing.

6. The aqueous electroplating solution according to claim 1 , wherein the at least one high molecular weight polymer comprises at least one material selected from the group consisting of a polymer with a molecular weight of up to about 5000 grams/mole and a polymer with a molecular weight in the range of about 970 to 1200 grams/mole.

7. The aqueous electroplating solution according to claim 1 , wherein the at least one divalent sulfur compound is selected from the group consisting of organic sulfonium sulfonates, organic sulfonium carboxylates and combinations thereof.

8. The aqueous electroplating solution according to claim 1 , wherein the at least one divalent sulfur compound is at least one of bis(dimethylthiocarbamyl)sulfonium-1-propanesulfonate, 2-dimethylsulfonium-1-propanesulfonate, 2-(diphenyl)sulfonium-1-butanesulfonate, methylbutyl sulfonium ethanecarboxylate, and bis(dimethylthiocarbamyl)sulfonium 1-propanecarboxylate.

9. A method for electrodepositing copper on a substrate at an elevated temperature, the method comprising:

electrolytically depositing copper on the substrate from an aqueous plating solution, the aqueous plating solution comprising:

a) a soluble copper salt;

b) an acid;

c) a source of halide ions; and

d) an additive system comprising:

i) a suppressor comprising at least one high molecular weight polymer; a brightener comprising at least one divalent sulfur compound; and

iii) a leveler comprising tetrakis(pyridinomethyl) Cu(II) phthalocyanine chloride.

10. The method according to claim 9 , wherein the substrate has irregular topography.

11. The method according to claim 9 , wherein the substrate is a printed circuit board having through holes.

12. The method according to claim 11 , wherein the through holes have an aspect ratio of up to about eight to one.

13. The method according to claim 9 , wherein the copper is deposited at a cathode current density of between about 5 and about 50 ASF.

14. The method according to claim 9 , wherein the temperature of the aqueous plating solution is between about 27 and about 40° C.

15. The method according to claim 9 , wherein the at least one high molecular weight polymer comprises at least one material selected from the group consisting of a polymer with a molecular weight of up to about 5000 grams/mole and a polymer with a molecular weight in the range of about 970 to 1200 grams/mole.

16. The method according to claim 9 , wherein the at least one divalent sulfur compound is selected from the group consisting of organic sulfonium sulfonates, organic sulfonium carboxylates and combinations thereof.

17. The method according to claim 9 wherein the at least one divalent sulfur compound is at least of bis(dimethylthiocarbamyl)sulfonium-1-propanesulfonate, 2-dimethylsulfonium-1-propanesulfonate, 2-(diphenyl) sulfonium-1-butanesulfonate, methylbutyl sulfonium ethanecarboxylate, and bis(dimethylthiocarbarnyl) sulfonium 1-propanecarboxylate.

Assignments (9)