Real-time gate etch critical dimension control by oxygen monitoring
A process and apparatus for controlling an etchant gas concentration in an etch chamber. The etchant gas concentration and an inert gas concentration are determined and the latter concentration is used to normalize the etchant gas concentration. The normalized value is compared with a predetermined reference value and the flow of etchant gas into the chamber is controlled in response thereto.
1. A process for controlling etching on a semiconductor substrate wherein the etching is affected by the concentration of an etchant gas, and wherein the etchant gas is input to an etch chamber via a mass flow controller, the process comprising:
determining a desired etchant gas concentration;
supplying an inert gas to the etch chamber;
producing a first signal representative of an actual etchant gas concentration;
producing a second signal representative of an inert gas concentration;
relating the first and the second signals to produce a normalized etchant gas concentration signal;
employing a comparator having a first input terminal receiving the normalized etchant gas concentration signal and a second input terminal receiving a reference signal representing the desired etchant gas concentration, the comparator for outputting an error signal for controlling the mass flow controller, said error signal representing a difference between said reference signal and said normalized etchant gas concentration signal; and
controlling the mass flow controller in response to the employing step.
2. The process of claim 1 wherein the etchant gas comprises an oxygen radical.
3. The process of claim 1 wherein the inert gas comprises argon.
4. The process of claim 1 wherein the etchant gas comprises an oxygen radical, the process further comprising:
supplying oxygen to the etch chamber; and
forming a plasma within the etch chamber to form an oxygen radical from the oxygen.
5. The process of claim 1 wherein the first signal comprises a signal representative of a spectral emission line formed by the etchant gas.
6. The process of claim 1 wherein the second signal comprises a signal representative of a spectral emission line formed by the inert gas.
7. The process of claim 1 wherein the step of relating further comprises dividing the first signal by the second signal.
8. The process of claim 1 wherein the semiconductor substrate comprises a plurality of transistor gate features formed with predetermined dimensions, and wherein the etchant gas reduces certain feature dimensions.
9. The process of claim 1 wherein the step of relating comprises:
filtering the first signal to produce a filtered first signal representative of a spectral emission line formed by the etchant gas;
filtering the second signal to produce a filtered second signal representative of a spectral emission line formed by the inert gas; and
relating the first and the second filtered signals to produce the normalized etch gas concentration signal.
10. The process of claim 9 wherein the step of relating further comprises filtering the normalized etchant gas signal to remove short duration temporal variations.
11. The process of claim 10 wherein the step of filtering further comprises integrating the normalized etchant gas signal.
12. The process of claim 1 wherein the first and the second signals comprise first and second optical signals, respectively.
13. The process of claim 12 further comprising filtering the first optical signal to produce a filtered first optical signal and transforming the filtered first optical signal to a first electrical signal, wherein the first electrical signal represents the actual etchant gas concentration.
14. The process of claim 12 further comprising filtering the second optical signal to produce a filtered second optical signal and transforming the filtered second optical signal to a second electrical signal, wherein the second electrical signal represents the inert gas concentration.
15. A process for controlling isotropic etching on a semiconductor substrate wherein the isotropic etching is affected by a concentration of an etchant gas input to an etch chamber via a mass flow controller, and wherein anisotropic etching also occurs in the etch chamber, the process comprising:
determining a desired etchant gas concentration;
supplying a passivating gas to the etch chamber;
producing a first signal representative of an actual etchant gas concentration;
producing a second signal representative of a passivating gas concentration;
relating the first and the second signals to produce a third signal;
employing a comparator having a first input terminal receiving the first signal and a second input terminal receiving a reference signal representing the desired etchant gas concentration, the comparator for outputting an error signal for controlling the mass flow controller, said error signal representing a difference between said reference signal and said first signal; and
controlling the concentration of at least one of the etchant gas and the passivating gas in response to the employing step.
16. The process of claim 15 wherein the third signal represents a ratio of the etchant gas and the passivating gas.
17. The process of claim 15 wherein the first signal comprises a signal representative of a spectral emission line formed by the etchant gas.
18. The process of claim 15 wherein the second signal comprises a signal representative of a spectral emission line formed by the passivating gas.
19. The process of claim 15 wherein the reference relates to the ratio of the passivating gas to the etchant gas to limit an extent of the anisotropic etch.
20. A process for controlling an etch rate on a semiconductor substrate wherein the etch rate is substantially affected by the concentration of an etchant gas, and wherein the etchant gas is input to an etch chamber via a mass flow controller, the process comprising:
determining the etchant gas concentration in the etch chamber;
employing a comparator having a first input terminal receiving a first signal representative of the etchant gas concentration and a second input terminal receiving a reference signal representing a desired etchant gas concentration, the comparator for outputting an error signal for controlling a mass flow controller controlling a flow rate of said etchant gas, said error signal representing a difference between said reference signal and said normalized etchant gas concentration signal;
generating an error signal in response to the employing step; and
controlling the mass flow controller in response to the error signal.