IP Library Granted Patent US 7,538,581
Granted Patent B2
US 7,538,581 · App. 11/831,011 · Granted May 26, 2009

Fast AC coupled level translator

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Quick Facts
Patent No.
US 7,538,581
App. No.
11/831,011
Granted
May 26, 2009
Kind
B2
Abstract

A level translator has a pair of transistors, wherein a first transistor of the pair of transistors and a second transistor of the pair of transistors are complimentary. A pair of capacitors are provided, wherein a first capacitor of the pair of capacitors is coupled to a voltage input VIN and to a gate of a first transistor of the pair of complimentary transistors and a second capacitor of the pair of capacitors is coupled the voltage input VIN and to a gate of a second transistor of the pair of complimentary transistors. A flip flop device is provided having a first input coupled to a drain of the first transistor, and a second input coupled to a drain of the second transistor. A pair of resistors is provided, wherein a first resistor of the pair of resistors is coupled to the gate of the first transistor and to a voltage supply of VDD, and a second resistor of the pair of resistors is coupled to the gate of the second transistor and to a voltage supply VSS. A pair of clamping circuits is provided, wherein a first clamping circuit of the pair of clamping circuits is coupled to the gate of the first transistor and to a voltage supply of VDD, and a second clamping circuit of the pair of clamping circuits is coupled to the gate of the second transistor and to a voltage supply VSS.

Claims (52)

1. A level translator comprising:

a pair of transistors, wherein a first transistor of the pair of transistors and a second transistor of the pair of transistors are complimentary;

a pair of capacitors, wherein a first capacitor of the pair of capacitors is coupled to a voltage input VIN and to a gate of a first transistor of the pair of complimentary transistors and a second capacitor of the pair of capacitors coupled the voltage input VIN and to a gate of a second transistor of the pair of complimentary transistors;

a flip flop device having a first input coupled to a drain of the first transistor, and a second input coupled to a drain of the second transistor,

a pair of resistors, wherein a first resistor of the pair of resistors is coupled to the gate of the first transistor and to a voltage supply of VDD, and a second resistor of the pair of resistors is coupled to the gate of the second transistor and to a voltage supply VSS; and

a pair of clamping circuits, wherein a first clamping circuit of the pair of clamping circuits is coupled to the gate of the first transistor and to a voltage supply of VDD, and a second clamping circuit of the pair of clamping circuits is coupled to the gate of the second transistor and to a voltage supply VSS;

wherein a source of the first transistor is connected to a first pole of a power source, a source of the second transistor is connected to a second pole of the power source, a drain of the first transistor is connected to a first input of the flip-flop, a drain of the second transistor is connected to a second input of the flip-flop, a gate of the first transistor being further connected to the first clamp circuit, and a gate of the second transistor being further connected to the second clamp circuit;

wherein an additional at least one of a reset or set input is provided on the flip-flop for determining the state of the flip-flop at an arbitrary time; and

wherein a voltage change detector is coupled to the flip flop to control at least one of a reset or set input of the flip-flop.

2. A level translator in accordance with claim 1 wherein the pair of complimentary transistors comprises a pair of complimentary MOS transistors.

3. A level translator in accordance with claim 1 , wherein the flip-flop is made with two CMOS inverters connected in opposition to form a memory circuit with two stable states.

4. A level translator in accordance with claim 1 , wherein at least one output of the flip-flop is connected to an input of at least one of a logic gate or an inverter.

5. A complementary MOS field effect transistor amplifier for AC input signals, comprising:

a voltage detection circuit comprising:

a first transistor having a first predetermined voltage threshold; and

a second transistor having a second predetermined voltage threshold, the first and second transistors having control gates and being of complementary conductivity;

a first coupling capacitor coupled to the gate of the first transistor;

a second coupling capacitor coupled to the gate of the second transistor;

a first resistor coupled to the gate of the first transistor and to a source of the first transistor;

a second resistor coupled to the gate of the second transistor and to a source of the second transistor;

a first clamp circuit coupled to the gate of the first transistor for limiting a gate voltage of the first transistor; and

a second clamp circuit coupled to the gate of the second transistor for limiting a gate voltage of the second transistor;

wherein the source of the first transistor is connected to a first pole of a power source, the source of the second transistor is connected to a second pole of the power source, the drain of the first transistor is connected to a first input of a flip-flop, the drain of the second transistor is connected to a second input of the flip-flop, the gate of the first transistor being further connected to the first clamp circuit, and the gate of the second transistor being further connected to the second clamp circuit;

wherein an additional at least one of a reset or set input is provided on the flip-flop for determining the state of the flip-flop at an arbitrary time; and

wherein a voltage change detector is coupled to the flip flop to control at least one of a reset or set input of the flip-flop.

6. A complementary MOS field effect transistor amplifier for AC input signals in accordance with claim 5 , wherein the first and second inputs of the flip-flop are connected to a same node, the flip-flop state being determined by whether current is forced into or out of the same node.

7. A complementary MOS field effect transistor amplifier for AC input signals in accordance with claim 6 , wherein the flip-flop comprises a pair of CMOS inverters connected in opposition to form a memory circuit with two stable states.

8. A complementary MOS field effect transistor amplifier for AC input signals in accordance with claim 5 , wherein at least one output of the flip-flop is connected to an input of at least one of a logic gate or an inverter.

9. A complementary MOS field effect transistor amplifier for AC input signals in accordance with claim 5 , wherein output voltages of the first and second clamp circuits are chosen to minimize current consumption of the amplifier for a given load.

10. A complementary MOS field effect transistor amplifier for AC input signals in accordance with claim 5 , wherein at least one of the first and second clamp circuits contains a MOS transistor.

11. A complementary MOS field effect transistor amplifier for AC input signals in accordance with claim 5 , wherein the first and second capacitors are driven by the same signal source.

12. A complementary MOS field effect transistor amplifier for AC input signals in accordance with claim 5 , wherein at least one of the resistors is made with an MOS transistor.

13. A complementary MOS field effect transistor amplifier for AC input signals, comprising:

a voltage detection circuit comprising:

a first transistor having a first predetermined voltage threshold; and

a second transistor having a second predetermined voltage threshold, the first and second transistors having control gates and being of complementary conductivity;

a first coupling capacitor coupled to the gate of the first transistor;

a second coupling capacitor coupled to the gate of the second transistor;

a first resistor coupled to the gate of the first transistor and to a source of the first transistor;

a second resistor coupled to the gate of the second transistor and to a source of the second transistor;

a first clamp circuit coupled to the gate of the first transistor for limiting a gate voltage of the first transistor; and

a second clamp circuit coupled to the gate of the second transistor for limiting a gate voltage of the second transistor;

wherein the source of the first transistor is connected to a first pole of a power source, the source of the second transistor; is connected to a second pole of the power source, the drain of the first transistor is connected to a first input of a flip-flop, the drain of the second transistor is connected to a second input of the flip-flop, the gate of the first transistor being further connected to the first clamp circuit, and the gate of the second transistor being further connected to the second clamp circuit;

wherein an additional at least one of a reset or set input is provided on the flip-flop for determining the state of the flip-flop at an arbitrary time; and

wherein a DC coupled level translator is used to control at least one of a reset or set input of the flip-flop.

14. A complementary MOS field effect transistor amplifier for AC input signals in accordance with claim 13 , wherein the first and second inputs of the flip-flop are connected to a same node, the flip-flop state being determined by whether current is forced into or out of the same node.

15. A complementary MOS field effect transistor amplifier for AC input signals in accordance with claim 14 , wherein output voltages of the first and second clamp circuits are chosen to minimize current consumption of the amplifier for a given load.

16. A complementary MOS field effect transistor amplifier for AC input signals in accordance with claim 14 , wherein an additional at least one of a reset or set input is provided on the flip-flop for determining the state of the flip-flop at an arbitrary time.

17. A complementary MOS field effect transistor amplifier for AC input signals in accordance with claim 13 , wherein the flip-flop comprises a pair of CMOS inverters connected in opposition to form a memory circuit with two stable states.

18. A complementary MOS field effect transistor amplifier for AC input signals in accordance with claim 14 , wherein at least one output of the flip-flop is connected to an input of at least one of a logic gate or an inverter.

19. A complementary MOS field effect transistor amplifier for AC input signals in accordance with claim 13 , wherein a logic state comparator is used to determine a correspondence of an output of the DC coupled level translator to the output of the amplifier.

20. A complementary MOS field effect transistor amplifier for AC input signals in accordance with claim 19 , wherein a timer is used to determine when the output of the logic state comparator is used.

Assignments (17)
RELEASE OF SECURITY INTEREST Recorded Mar 14, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 060894/0437 →
RELEASE OF SECURITY INTEREST Recorded Mar 11, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059363/0001 →
RELEASE OF SECURITY INTEREST Recorded Mar 10, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059863/0400 →
RELEASE OF SECURITY INTEREST Recorded Mar 9, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059358/0001 →
RELEASE OF SECURITY INTEREST Recorded Feb 28, 2022
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED
Reel/Frame 059666/0545 →
RELEASE OF SECURITY INTEREST Recorded Feb 25, 2022
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059333/0222 →
SECURITY INTEREST Recorded Jun 4, 2021
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 057935/0474 →
SECURITY INTEREST Recorded Dec 24, 2020
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 055671/0612 →
SECURITY INTEREST Recorded Jun 5, 2020
From: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION
Reel/Frame 053468/0705 →
RELEASE OF SECURITY INTEREST Recorded May 30, 2020
From: JPMORGAN CHASE BANK, N.A, AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 053466/0011 →
SECURITY INTEREST Recorded Apr 24, 2020
From: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 053311/0305 →
SECURITY INTEREST Recorded Sep 18, 2018
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 047103/0206 →
SECURITY INTEREST Recorded Jun 25, 2018
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 046426/0001 →
SECURITY INTEREST Recorded Feb 10, 2017
From: MICROCHIP TECHNOLOGY INCORPORATED
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 041675/0617 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 22, 2014
From: SUPERTEX LLC
To: MICROCHIP TECHNOLOGY INCORPORATED
Reel/Frame 034689/0257 →
CHANGE OF NAME Recorded Dec 19, 2014
From: SUPERTEX, INC.
To: SUPERTEX LLC
Reel/Frame 034682/0134 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 31, 2007
From: WALKER, JAMES T.
To: SUPERTEX, INC.
Reel/Frame 019624/0248 →