IP Library Granted Patent US 7,906,424
Granted Patent B2
US 7,906,424 · App. 11/832,486 · Granted Mar 15, 2011

Conductor bump method and apparatus

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Quick Facts
Patent No.
US 7,906,424
App. No.
11/832,486
Granted
Mar 15, 2011
Kind
B2
Abstract

Various semiconductor die conductor structures and methods of fabricating the same are provided. In one aspect, a method of manufacturing is provided that includes forming a conductor structure on a conductor pad of a semiconductor die. The conductor layer has a surface. A polymeric layer is formed on the surface of the conductor layer while a portion of the surface is left exposed. A solder structure is formed on the exposed portion of the surface and a portion of the polymeric layer.

Claims (28)

1. A method of manufacturing, comprising:

forming a conductor structure on a conductor pad of a semiconductor die, the conductor structure having a surface;

forming a polymeric layer on the surface of the conductor structure while leaving portions of the surface exposed;

forming a solder structure on each of the exposed portions of the surface, wherein a portion of each of the solder structures is positioned on the polymeric layer; and wherein a passivation structure is positioned on the conductor pad, the conductor structure is positioned on the passivation structure and a portion of the conductor structure is in electrical contact with the conductor pad by way of an opening in the passivation structure.

2. The method of claim 1 , wherein the forming the polymeric layer comprises forming a polyimide layer.

3. The method of claim 1 , wherein the forming the solder structures comprises plating a solder material.

4. The method of claim 3 , wherein the plating the solder material comprises plating a lead-free solder.

5. The method of claim 1 , wherein the forming the solder structures comprises stencil forming a solder material.

6. The method of claim 1 , wherein the forming the solder structures comprises a thermal reflow.

7. The method of claim 1 , wherein the forming the conductor structure comprises depositing metal and etching the metal to remove unwanted portions thereof.

8. The method of claim 1 , wherein the solder structures comprise power or ground input/outputs.

9. A method of manufacturing, comprising:

forming an underbump metallization structure on a conductor pad of a semiconductor die, the underbump metallization structure having a surface;

forming a polymeric layer on the surface of the underbump metallization structure while leaving portions of the surface exposed; and

bonding a solder structure on each of the exposed portions of the surface wherein a portion of each of the solder structures is positioned on the polymeric layer; and wherein a passivation structure is positioned on the conductor pad, the underbump metallization structure is positioned on the passivation structure and a portion of the underbump metallization structure is in electrical contact with the conductor pad by way of an opening in the passivation structure.

10. A method of manufacturing, comprising:

forming a conductor structure on a conductor pad of a semiconductor die, the conductor structure having a surface;

forming a polymeric layer on the surface of the conductor layer while leaving portions of the surface exposed;

forming a solder structure on each of the exposed portions of the surface, wherein a portion of each of the solder structures is positioned on the polymeric layer; and

coupling the semiconductor die to a first substrate; and wherein a passivation structure is positioned on the conductor pad, the conductor structure is positioned on the passivation structure and a portion of the conductor structure is in electrical contact with the conductor pad by way of an opening in the passivation structure.

11. The method of claim 10 , wherein the coupling the semiconductor die comprises flip-chip mounting.

12. The method of claim 10 , comprising coupling the first substrate to a second substrate.

13. The method of claim 10 , wherein the forming the polymeric layer comprises forming a polyimide layer.

14. The method of claim 10 , wherein the forming the solder structures comprises plating a solder material.

15. The method of claim 14 , wherein the plating the solder material comprises plating a lead-free solder.

16. The method of claim 10 , wherein the forming the solder structure comprises stencil forming a solder material.

17. The method of claim 10 , wherein the solder structures comprise power or ground input/outputs.

18. The method of claim 9 , wherein the solder structures comprise power or ground input/outputs.

Assignments (5)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 29, 2021
From: MOSAID TECHNOLOGIES INC.
To: ADVANCED MICRO DEVICES, INC.
Reel/Frame 057024/0919 →
RELEASE OF SECURITY INTEREST Recorded Nov 10, 2020
From: CPPIB CREDIT INVESTMENTS INC.
To: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
Reel/Frame 054372/0194 →
AMENDED AND RESTATED U.S. PATENT SECURITY AGREEMENT (FOR NON-U.S. GRANTORS) Recorded Aug 22, 2018
From: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
To: CPPIB CREDIT INVESTMENTS, INC.
Reel/Frame 046900/0136 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 22, 2016
From: ADVANCED MICRO DEVICES, INC.
To: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
Reel/Frame 037876/0790 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 1, 2007
From: TOPACIO, RODEN R.; LOW, YIP SENG; MCLELLAN, NEIL; LEUNG, ANDREW KW
To: ADVANCED MICRO DEVICES, INC.
Reel/Frame 019633/0246 →