Fabrication method of semiconductor integrated circuit device
View Patent ↗Productivity is to be improved in assembling a semiconductor integrated circuit device. A matrix substrate is provided and semiconductor chips are disposed on a first heating stage, then the matrix substrate is disposed above the semiconductor chips on the first heating stage, subsequently the semiconductor chips and the matrix substrate are bonded to each other temporarily by thermocompression bonding while heating the chips directly by the first heating stage, thereafter the temporarily bonded matrix substrate is disposed on a second heating stage adjacent to the first heating stage, and then on the second heating stage the semiconductor chips are thermocompression-bonded to the matrix substrate while being heated directly by the second heating stage.
1. A method of fabricating a semiconductor integrated circuit device, comprising the steps of:
(a) providing a substrate;
(b) disposing a plurality of semiconductor chips over a stage;
(c) disposing the substrate over first main surface sides of the plural semiconductor chips; and
(d) pressurizing the plural semiconductor chips correspondingly by a plurality of pressure blocks while heating the semiconductor chips from second main surface sides of the chips by the stage, the plural pressure blocks being supported each independently movably in corresponding relation to the semiconductor chips, thereby thermocompression bonding the semiconductor chips all together to the substrate,
wherein said step (d) comprises:
(d1) pressurizing the plural semiconductor chips by a first pressure; and
(d2) after the step (d1), pressurizing the plural semiconductor chips by a second pressure which is higher than said first pressure, and wherein in the step (d1) the semiconductor chips are bonded to the substrate by a temporary bonding, with a main bonding being performed in the step (d2).
2. A method according to claim 1 , wherein the heating in the step (d) is performed also from the first main surface sides of the semiconductor chips.
3. A method according to claim 1 , wherein the heating from the second main surface sides of the semiconductor chips is performed directly without interposition of the substrate.
4. A method according to claim 1 , wherein the substrate is an organic wiring substrate.
5. A method according to claim 4 , wherein the temperature of the heating from the second main surface sides of the semiconductor chips is lower than the glass transition temperature of an organic resin which constitutes a principal portion of the organic wiring substrate.
6. A method according to claim 1 , wherein the plural semiconductor chips are pressurized by the plural pressure blocks in the step (d2), and in the step (d1) the semiconductor chips are pressurized by the first pressure one-by-one.