Patent Assignment
Reel/Frame 043638/0393
Merger
Recorded: 2017-09-20
Received: 2017-09-20
Pages: 11
Assignor
RENESAS EASTERN JAPAN SEMICONDUCTOR, INC.
Executed: 2013-10-01
Assignee
RENESAS NORTHERN JAPAN SEMICONDUCTOR, INC.
11-3, SHINBASHI 5-CHOME, MINATO-KU, TOKYO, JPX, JAPAN
Covered Properties
(13)
Fabrication Method of Semiconductor Integrated Circuit Device
Application:
13/607,864 →
Fabrication Method of Semiconductor Integrated Circuit Device
Application:
12/956,524 →
Fabrication Method of Semiconductor Integrated Circuit Device
Application:
12/836,432 →
Fabrication Method of Semiconductor Integrated Circuit Device
Application:
12/729,102 →
Fabrication Method of Semiconductor Integrated Circuit Device
Application:
12/118,348 →
Semiconductor Device Having Strained Silicon Film
Application:
11/969,154 →
Fabrication Method of Semiconductor Integrated Circuit Device
Application:
11/837,168 →
Fabrication Method of Semiconductor Integrated Circuit Device
Application:
11/320,888 →
Semiconductor Integrated Circuit Device and Imaging System
Application:
11/000,415 →
Method of Fabrication of Semiconductor Integrated Circuit Device
Application:
10/901,999 →
Method of Manufacturing a Semiconductor Device
Application:
10/812,869 →
Fabrication Method of Semiconductor Integrated Circuit Device
Application:
10/682,028 →
Fabrication Method of Semiconductor Device and Semiconductor Device
Application:
10/440,102 →