Fabrication method of semiconductor integrated circuit device
View Patent ↗A method of fabricating a semiconductor integrated circuit device uses a mold which is provided with a plurality of air vents and movable pins which are formed such that the movable pins include grooves in the distal ends thereof which project into the air vents. By clamping the mold in a state such that the distal ends of the movable pins are pushed against a multi-cavity board at the time of clamping the mold, resin can be filled while leaking air inside the cavity through the grooves formed in the distal ends of the movable pins by setting the depths of the respective air vents to a fixed value irrespective of the irregularities in thickness of the multi-cavity boards. Accordingly, it is possible to prevent insufficient filling of resin in the cavity, the leaking of resin or defective welding, whereby the yield rate of products can be enhanced.
1. A method of manufacturing a semiconductor device comprising the steps of:
(a) providing a mold including a first mold having a cavity and an air vent communicated with the cavity, a second mold opposed to the first mold, a movable pin formed in the first mold such that the movable pin is protruded into the air vent, and a movable pin driving spring connected with the movable pin;
(b) disposing a wiring board, on which a semiconductor chip is mounted, including a plurality of wiring layers on a surface of the second mold;
(c) after the step (b), clamping the wiring board with the first and second molds; and
(d) after the step (c), injecting a sealing resin in the cavity,
wherein a groove is formed at an end face of the movable pin as a pathway of air; and
wherein in the step (c), contacting the end face of the movable pin with the wiring board by clamping the mold, and raising the movable pin by clamping the mold, and closing the mold.
2. A method of manufacturing a semiconductor device according to claim 1 , wherein in the groove, a depth formed at a first part, which is located closer to the cavity side than the movable pin, is larger than a depth formed at a second part on an opposite side of the first part via the movable pin.
3. A method of manufacturing a semiconductor device according to claim 1 , wherein before the step (b), a film is arranged between the first and second molds, sucked through a vacuum hole formed in the first mold, and attached to a surface of the first mold.
4. A method of manufacturing a semiconductor device according to claim 3 , wherein the film follows the groove formed at the end face of the movable pin by sucking the film.
5. A method of manufacturing a semiconductor device according to claim 1 , wherein a pusher rod is formed in the first mold; and
wherein in a state of opening the mold, the movable pin is pushed to the air vent side by the pusher rod.
6. A method of manufacturing a semiconductor device according to claim 1 , wherein in the air vent, a width formed at a first part, which is located closer to the cavity than the movable pin, is smaller than a diameter of the movable pin.
7. A method of manufacturing a semiconductor device according to claim 1 , wherein the wiring board includes a front surface, a chip mounting area, a plurality of leads formed on the front surface, a first insulating film formed over the front surface, a rear surface opposed to the front surface, and a second insulating film formed over the rear surface;
wherein the semiconductor chip is mounted on the chip mounting area of the wiring board; and
wherein a plurality of bonding electrodes of the semiconductor chip are connected with the plurality of leads of the wiring board via a plurality of wires.
8. A method of manufacturing a semiconductor device according to claim 7 , wherein the mold is opened after the step (d);
wherein the wiring board is removed from the mold after opening the mold; and
wherein a plurality of external terminals are formed on the rear surface of the wiring board after removing the wiring board from the mold.