Wire bonding structure and method that eliminates special wire bondable finish and reduces bonding pitch on substrates
View Patent ↗A semiconductor package has a semiconductor die disposed on a substrate. A bond wire is connected between a first bonding site on the semiconductor die and a second bonding site on the substrate. The first bonding site is a die bond pad; the second bonding site is a stitch bond. The second bonding site has a bond finger formed on the substrate, a conductive layer in direct physical contact with the bond finger, and a bond stud coupled to the bond wire and in direct physical contact with the conductive layer to conduct an electrical signal from the semiconductor die to the bond finger. The bond finger is made of copper. The conductive layer is made of copper or gold. The bond stud is made of gold and overlies a side portion and top portion of the copper layer.
1. A semiconductor package, comprising:
a substrate;
a semiconductor die disposed on the substrate; and
a bond wire connected between a first bonding site on the semiconductor die and a second bonding site on the substrate, the second bonding site including,
(a) a bond finger formed on the substrate,
(b) a copper layer in direct physical contact with the bond finger, and
(c) a bond stud coupled to the bond wire and in direct physical contact with the copper layer to conduct an electrical signal from the semiconductor die to the bond finger.
2. The semiconductor package of claim 1 , wherein the bond finger is made of copper.
3. The semiconductor package of claim 1 , wherein the bond stud is made of gold.
4. The semiconductor package of claim 1 , wherein the bond stud overlies a side portion and top portion of the copper layer.
5. The semiconductor package of claim 1 , wherein the first bonding site includes a die bond pad.
6. The semiconductor package of claim 1 , wherein the second bonding site includes a stitch bond.
7. A method of making a semiconductor package, comprising:
forming a substrate;
disposing a semiconductor die on the substrate; and
connecting a bond wire between a first bonding site on the semiconductor die and a second bonding site on the substrate by,
(a) forming a bond finger on the substrate,
(b) forming a copper layer in direct physical contact with the bond finger, and
(c) forming a bond stud coupled to the bond wire and in direct physical contact with the copper layer to conduct an electrical signal from the semiconductor die to the bond finger.
8. The method of claim 7 , wherein the copper layer includes a glass passivation coating.
9. The method of claim 7 , wherein the copper layer includes an immersion layer of gold.