Polyconductor line end formation and related mask
View Patent ↗Methods of forming adjacent polyconductor line ends and a mask therefor are disclosed. In one embodiment, the method includes forming a polyconductor layer over an isolation region; forming a mask over the polyconductor layer, the mask including shapes to create the polyconductor line ends and a correction element to ensure a designed proximity of the polyconductor line ends; and etching the polyconductor layer using the patterned photoresist mask to create the adjacent polyconductor line ends, wherein the correction element is removed during the etching.
1. A method of forming adjacent polyconductor line ends, the method comprising:
forming a polyconductor layer over an isolation region;
forming a mask over the polyconductor layer, the mask including a shape to create the polyconductor line ends and a sub-resolution correction element to ensure a designed proximity of the polyconductor line ends; and
etching the polyconductor layer using the patterned photoresist mask to create the adjacent polyconductor line ends, wherein the sub-resolution correction element is removed during the etching,
wherein the sub-resolution correction element exists despite any optical proximity correction (OPC), and
wherein the sub-resolution correction element includes an island positioned in an opening between each shape of the mask for the polyconductor line ends.