Voltage level translation
View Patent ↗A virtual zero delay unidirectional high voltage logic to low voltage CMOS logic voltage level translator can be achieved using a capacitive voltage divider coupled with the standard protection diodes commonly incorporated in low side logic (e.g. Xilinx Spartan-3E FPGA's). The complete voltage level translator will work equally well on frequencies from DC up to the rated operational frequency of the driver and receiver. Load side parasitic CMOS input capacitance in this case is ironically an asset rather than a liability since it can be used effectively as one element of the capacitive voltage divider. High voltage logic (e.g. 0 to 5V) can thus interface to lower voltage CMOS logic (e.g. 2.5V or 3.3V) with a minimum of additional external components and with virtually zero time delay.
1. A voltage level translator circuit for coupling a higher voltage circuit to a lower voltage load circuit, the voltage level translator circuit comprising:
a higher voltage input for electrically coupling the voltage level translator circuit to a signal output of the higher voltage circuit;
a lower voltage output for electrically coupling the voltage level translator circuit to a signal input of the lower voltage circuit; and
a circuit element electrically coupled between the higher voltage input and lower voltage output;
wherein the circuit element is arranged to provide a capacitance between the higher voltage input and lower voltage output, the capacitance having a value selected in dependence on a combination of (i) a desired voltage division ratio between the higher voltage input and the lower voltage output and (ii) a value of an input load capacitance of the lower voltage load circuit expected to occur between the lower voltage output and a ground reference.
2. A voltage level translator circuit according to claim 1 , wherein the input load capacitance value is a stated upper bound of the input load capacitance of the lower voltage load circuit expected to occur between the lower voltage output and a ground reference.
3. A voltage level translator circuit according claim 1 , wherein the capacitance value of the circuit element is selected to be the input capacitance value multiplied by the desired voltage of the lower voltage output in a logic high state divided by the difference in voltage between the output voltage of the higher voltage device or circuit in a logic high state and the desired voltage of the lower voltage output in a logic high state.
4. A voltage level translator circuit according to claim 3 , wherein the output voltage of the higher voltage circuit in a logic high state is a stated lower bound for output voltage of the higher voltage circuit in a logic high state.
5. A voltage level translator circuit according to claim 1 , wherein the circuit element provides a resistance between the higher voltage input and lower voltage output, the resistance having a value selected such that a DC current flowing from the higher voltage circuit to the lower voltage load circuit will overcome an effective DC leakage current of the lower voltage load circuit.
6. A voltage level translator circuit according to claim 5 , wherein the resistance value is substantially less than the high voltage input voltage minus the low voltage output voltage all divided by the effective DC leakage current of the lower load circuit.
7. A voltage level translator circuit according to claim 5 , wherein the effective DC leakage current is a stated upper bound for the effective DC leakage current of the lower voltage load circuit.
8. A voltage level translator circuit according to claim 1 , wherein the circuit element provides a resistance between the higher voltage input and lower voltage output, the resistance having a value selected such that a stated upper bound for DC current flowing through a protection diode of the input of the lower voltage load circuit is not exceeded.
9. A voltage level translator circuit according to claim 8 , wherein the resistance value is at least as great as the higher voltage input voltage minus the lower voltage output voltage all divided by a maximum allowed input protection diode DC current.
10. A voltage level translator circuit according to claim 1 ,
wherein the circuit element comprises a plurality of capacitative sub elements each being selectably electrically coupleable between the higher voltage input and lower voltage output to provide a capacitance there between, and
wherein the voltage level translator circuit comprises one or more switches arranged to selectively electrically couple one or more of the capacitative sub elements between the higher voltage input and lower voltage output, thereby to provide a capacitance having a plurality of selectable values.
11. A voltage level translator circuit according to claim 10 , wherein the one or more switches each comprise a field effect transistor.
12. A voltage level translator circuit according to claim 10 , wherein each capacitative sub element is one selected from the group comprising: a capacitor; a reverse-biased diode; a weakly-enabled field effect transistor; and a reverse-biased bipolar transistor.
13. A voltage level translator circuit according to claim 10 , wherein each resistive sub element is one selected from the group comprising: a resistor; a reverse-biased diode; a weakly-enabled field effect transistor; and a reverse-biased bipolar transistor.
14. A voltage level translator circuit according to claim 1 ,
wherein the circuit element comprises a plurality of resistive sub elements each being selectably electrically coupleable between the higher voltage input and lower voltage output to provide a resistance there between, and
wherein the voltage level translator circuit comprises one or more switches arranged to selectively electrically couple one or more of the resistive sub elements between the higher voltage input and lower voltage output thereby to provide a resistance having a plurality of selectable values.
15. A voltage level translator circuit according to claim 1 , wherein the first circuit element is one selected from the group comprising: a capacitor; a reverse-biased diode; a weakly-enabled field effect transistor; and a reverse-biased bipolar transistor.
16. A circuit board comprising a voltage level translator circuit according to claim 1 .
17. A lower voltage load circuit comprising:
one or more voltage level translator circuits, each comprising:
a higher voltage input for electrically coupling the voltage level translator circuit to a signal output of a higher voltage circuit;
a lower voltage output for electrically coupling the voltage level translator circuit to a signal input of the lower voltage circuit; and
a circuit element electrically coupled between the higher voltage input and lower voltage output;
wherein the circuit element is arranged to provide a capacitance between the higher voltage input and lower voltage output, the capacitance having a value selected in dependence on a combination of (i) a desired voltage division ratio between the higher voltage input and the lower voltage output and (ii) a value of an input load capacitance of the lower voltage load circuit expected to occur between the lower voltage output and a ground reference.
18. A higher voltage circuit comprising:
one or more voltage level translator circuits, each comprising:
a higher voltage input for electrically coupling the voltage level translator circuit to a signal output of the higher voltage circuit;
a lower voltage output for electrically coupling the voltage level translator circuit to a signal input of a lower voltage load circuit; and
a circuit element electrically coupled between the higher voltage input and lower voltage output;
wherein the circuit element is arranged to provide a capacitance between the higher voltage input and lower voltage output, the capacitance having a value selected in dependence on a combination of (i) a desired voltage division ratio between the higher voltage input and the lower voltage load circuit expected to occur between the lower voltage output and a ground reference.