Granted Patent B2

US 9,157,150 · App. 11/950,339 · Granted Oct 13, 2015

Abstract

Claims (44)

1. A method of processing an electronic device comprising:

loading a workpiece into a processing chamber, the processing chamber at a loading temperature;

operating the processing chamber at a first temperature while the workpiece is being processed;

decreasing the temperature within the processing chamber from a first temperature to a second temperature less than the first temperature and less than the loading temperature;

removing the workpiece and a carrier holding the workpiece from the processing chamber while decreasing the temperature within the processing chamber, by turning off power to all heating elements used to control the temperature within the processing chamber, from the second temperature to a third temperature lower than the first temperature and the second temperature;

increasing the temperature within the processing chamber to a fourth temperature greater than the second temperature and less than the first temperature while the processing chamber has no workpiece or carrier within; and

maintaining the temperature within the processing chamber at the fourth temperature for a time period to perform an outgassing operation closing a shutter adjacent to and outside of the processing chamber after the workpiece and the carrier are removed, wherein closing the shutter is performed after removing the workpiece and before increasing the temperature, the shutter not sealing the processing chamber from the ambient environment.

2. The method of claim 1 , wherein the operating the processing chamber at a first temperature further comprises:

flowing a nitrogen-containing gas into the processing chamber;

flowing a halogen-containing gas into the processing chamber; and

forming a hygroscopic compound along a wall of the processing chamber.

3. The method of claim 2 , wherein the nitrogen-containing gas comprises N 2 , NH 3 , N 2 H 4 , or any combination thereof.

4. The method of claim 2 , wherein the halogen-containing gas comprises an element including, silicon, cobalt, molybdenum, titanium, tungsten, tantalum, or any combination thereof.

5. The method of claim 2 , wherein the hygroscopic compound includes a nitrogen-containing halide.

6. The method of claim 5 , wherein the hygroscopic compound includes ammonium chloride.

7. The method of claim 2 , wherein the operating the processing chamber at a first temperature includes depositing a layer of material comprising silicon nitride.

8. The method of claim 1 , wherein the decreasing the temperature to the third temperature is carried out for a second time period sufficient to completely remove the workpiece and the carrier from the processing chamber.

9. The method of claim 8 , wherein the time period is at least approximately 11 minutes.

10. The method of claim 1 , wherein the first temperature is at least approximately 350° C.

11. The method of claim 1 , further comprising maintaining the temperature within the processing chamber at the second temperature for a time period of at least approximately 5 minutes.

12. The method of claim 1 , further comprising:

maintaining the temperature within the processing chamber at the third temperature for a third time period; and

opening a shutter adjacent to and outside of the processing chamber after the third time period.

13. The method of claim 12 , further comprising:

loading a different workpiece into the processing chamber after opening the shutter; and

increasing the temperature within the processing chamber after loading the different workpiece.

14. The method of claim 1 , wherein the operating the processing chamber at a second temperature is performed for a period of at least 6 minutes.

15. A method of processing electronic devices comprising:

loading a workpiece into a processing chamber, the processing chamber at a loading temperature;

depositing a layer of material on a portion of the workpiece within the processing chamber at a deposition temperature;

decreasing the temperature within the processing chamber from the deposition temperature to an idle temperature lower than the deposition temperature;

removing the workpiece and a carrier holding the workpiece from the processing chamber while decreasing the temperature within the processing chamber, by turning off power to all heating elements used to control the temperature within the processing chamber, from the idle temperature to a pull temperature to a pull temperature lower than the deposition temperature and the idle temperature;

closing a shutter adjacent to and outside of the processing chamber after removing the workpiece and the carrier from the processing chamber; and

increasing the temperature within the processing chamber to an outgassing temperature after closing the shutter and maintaining the temperature within the processing chamber at the outgassing temperature for a time period of at least 6 minutes to perform an outgassing operation.

16. The method of claim 15 , wherein the processing chamber includes a first heating element and a second heating element closer to a door of the processing chamber, and the decreasing the temperature to a pull temperature includes turning off power to the second heating element closer to the door.

17. The method of claim 15 , further comprising maintaining the processing chamber at the idle temperature for a period of at least 6 minutes.

18. A method of processing electronic devices comprising:

loading a workpiece into a processing chamber, the processing chamber at a loading temperature;

depositing a layer of material on a portion of the workpiece within the processing chamber at a deposition temperature, the deposition temperature being greater than the loading temperature;

decreasing the temperature within the processing chamber from the deposition temperature to an idle temperature lower than the deposition temperature and lower than the loading temperature;

removing the workpiece and a carrier holding the workpiece from the process chamber while decreasing the temperature within the processing chamber, by turning off power to all heating elements used to control the temperature within the processing chamber, from the idle temperature to a pull temperature to a pull temperature lower than the idle temperature, the rate of cooling within the process chamber to suppress outgassing;

closing a shutter adjacent to and outside of the processing chamber after removing the workpiece and the carrier from the processing chamber; and

increasing the temperature within the processing chamber to an outgassing temperature after closing the shutter and maintaining the temperature within the processing chamber at the outgassing temperature for a time period of at least 6 minutes to perform an outgassing operation, the outgassing temperature being greater than the idle temperature.

19. The method of claim 18 , further comprising maintaining the processing chamber at the idle temperature for a period of at least 6 minutes.

Assignments (8)