Methods for forming a composite pattern including printed resolution assist features
View Patent ↗An underlayer to be patterned with a composite pattern is formed on a substrate. The composite pattern is decomposed into a first pattern and a second pattern, each having reduced complexity than the composite pattern. A hard mask layer is formed directly on the underlying layer. A first photoresist is applied over the hard mask layer and lithographically patterned with the first pattern, which is transferred into the hard mask layer by a first etch. A second photoresist is applied over the hard mask layer. The second photoresist is patterned with the second pattern to expose portions of the underlying layer. The exposed portions of the underlying layer are etched employing the second photoresist and the hard mask layer, which contains the first pattern so that the composite pattern is transferred into the underlying layer.
1. A method of forming a lithographic pattern comprising:
forming an underlayer on a substrate;
forming a hard mask layer having a bottom surface in physical contact with a surface of said underlayer;
applying a first photoresist and lithographically patterning said first photoresist with a first pattern including a first sub-pattern and a second sub-pattern, wherein said first sub-pattern said second sub-pattern contain at least one instance of a unit pattern;
transferring said first pattern into said hard mask layer, wherein a first set of openings replicating said first sub-pattern and a second set of openings replicating said second sub-pattern are formed within said hard mask layer;
applying a second photoresist on said hard mask layer and said underlayer, wherein a material layer selected from said second photoresist and an planarizing material layer fills each of said first set of openings and each of said second set of openings;
lithographically patterning said material layer with a second pattern, wherein said second set of openings in said hard mask layer is filled with said material layer while said surface of said underlayer is physically exposed within said first set of openings in said hard mask layer; and
transferring a composite pattern of said first pattern and said second pattern into said underlayer, wherein said composite pattern includes openings within said underlayer that underlie said first set of openings in said hard mask layer and does not include any opening underneath said second set of openings in said hard mask layer.
2. The method of claim 1 , wherein printability of said first pattern is greater than printability of said first sub-pattern.
3. The method of claim 1 , wherein said first pattern comprises at least one two-dimensional array of said unit pattern.
4. The method of claim 3 , wherein said at least one two-dimensional array is a periodic two dimensional array.
5. The method of claim 3 , wherein said unit pattern is a contact hole.
6. The method of claim 1 , wherein said hard mask layer comprises a material selected from a dielectric oxide, a dielectric nitride, a dielectric oxynitride, and amorphous carbon, hydrogenated amorphous carbon, near frictionless carbon (NFC), a combination thereof, and a tunable etch resistant anti-reflective-coating (TERA) material.
7. The method of claim 1 , further comprising performing a first anisotropic etch to transfer said first pattern into said hard mask layer, and wherein said first anisotropic etch is selective to said underlayer.
8. The method of claim 7 , further comprising performing a second anisotropic etch to transfer said composite pattern into said underlayer, wherein said second anisotropic etch is selective to said hard mask layer.
9. A method of forming a lithographic pattern comprising:
forming an underlayer on a substrate;
forming a hard mask layer having a bottom surface in physical contact with a surface of said underlayer;
applying a first photoresist and lithographically patterning said first photoresist with a first pattern including a first sub-pattern and a second sub-pattern, wherein said first sub-pattern said second sub-pattern contain at least one instance of a unit pattern;
transferring said first pattern into said hard mask layer, wherein a first set of openings replicating said first sub-pattern and a second set of openings replicating said second sub-pattern are formed within said hard mask layer;
applying a second photoresist on said hard mask layer and said underlayer, wherein a material layer selected from said second photoresist and an planarizing material layer fills each of said first set of openings and each of said second set of openings;
lithographically patterning said material layer with a second pattern, wherein said second set of openings in said hard mask layer is filled with said material layer while said surface of said underlayer is physically exposed within said first set of openings in said hard mask layer; and
transferring a composite pattern of said first pattern and said second pattern into said underlayer, wherein said composite pattern includes openings within said underlayer that underlie said first set of openings in said hard mask layer and does not include any opening underneath said second set of openings in said hard mask layer.
10. The method of claim 9 , wherein printability of said first pattern is inherently greater than printability of said first sub-pattern.
11. The method of claim 9 , wherein each of said first sub-pattern comprises a first trough segment and said second sub-pattern comprises a second trough segment, wherein said second trough segment abuts said first trough segment, and wherein said unit pattern is a trough comprising said first trough segment and said second trough segment.
12. The method of claim 9 , wherein said first pattern comprises a one dimensional array of said trough.
13. The method of claim 12 , wherein said first pattern comprises a set of nested troughs and said unit pattern is one of said nested troughs.
14. The method of claim 9 , further comprising patterning said underlayer prior to said forming of said hard mask layer.
15. The method of claim 9 , wherein said hard mask layer comprises a material selected from a dielectric oxide, a dielectric nitride, a dielectric oxynitride, and amorphous carbon, hydrogenated amorphous carbon, near frictionless carbon (NFC), a combination thereof, and a tunable etch resistant anti-reflective-coating (TERA) material.
16. The method of claim 9 , further comprising performing a first anisotropic etch to transfer said first pattern into said hard mask layer, and wherein said first anisotropic etch is selective to said underlayer.
17. The method of claim 16 , further comprising performing a second anisotropic etch to transfer said composite pattern into said underlayer, wherein said second anisotropic etch is selective to said hard mask layer.
18. A method of forming a lithographic pattern comprising:
forming an underlayer on a substrate;
forming a hard mask layer comprising an inorganic material and having a bottom surface in physical contact with a surface of said underlayer;
applying a first photoresist and lithographically patterning said first photoresist with a first pattern including an array of a unit pattern, wherein exposure conditions are optimized for presence of said array of said unit pattern;
transferring said first pattern into said hard mask layer, wherein a first set of openings replicating said first sub-pattern and a second set of openings replicating said second sub-pattern are formed within said hard mask layer;
applying a second photoresist on said hard mask layer and said underlayer, wherein a material layer selected from said second photoresist and an planarizing material layer fills each of said first set of openings and each of said second set of openings;
lithographically patterning said material layer with a second pattern, wherein said second set of openings in said hard mask layer is filled with said material layer while said surface of said underlayer is physically exposed within said first set of openings in said hard mask layer; and
transferring a composite pattern of said first pattern and said second pattern into said underlayer, wherein said composite pattern includes openings within said underlayer that underlie said first set of openings in said hard mask layer and does not include any opening underneath said second set of openings in said hard mask layer.
19. The method of claim 18 , wherein said hard mask layer comprises one of a dielectric oxide, a dielectric nitride, a dielectric oxynitride, a tunable etch resistant anti-reflective-coating (TERA) material, amorphous carbon, hydrogenated amorphous carbon, near frictionless carbon (NFC), and a combination thereof.
20. The method of claim 18 , further comprising applying a planarizing material layer directly on said hard mask layer, wherein said second photoresist is applied on said BARC layer, and said composite pattern is not present in said substrate after said composite pattern is transferred into said underlayer.