Magnetically de-coupling magnetic memory cells and bit/word lines for reducing bit selection errors
View Patent ↗Techniques for shielding magnetic memory cells from magnetic fields are presented. In accordance with aspects of the invention, a magnetic storage element is formed with at least one conductive segment electrically coupled to the magnetic storage element. At least a portion of the conductive segment is surrounded with a magnetic liner. The magnetic liner is operative to divert at least a portion of a magnetic field created by a current passing through the conductive segment away from the magnetic storage element.
1. A memory cell, the memory cell comprising:
a magnetic storage element;
at least one conductive segment electrically coupled to the magnetic storage element; and
a magnetic liner surrounding at least a portion of the at least one conductive segment, the magnetic liner being operative to divert at least a portion of a magnetic field created by a current passing through the at least one conductive segment away from the magnetic storage element;
wherein the magnetic liner is situated between the at least one conductive segment and the magnetic storage element.
2. The memory cell of claim 1 , wherein the at least one conductive segment comprises at least one of a bit line, a word line, and a read line.
3. The memory cell of claim 2 , wherein the word line is a dual damascene word line.
4. The memory cell of claim 1 , wherein the magnetic liner comprises at least one of nickel, iron and cobalt.
5. The memory cell of claim 1 , wherein the magnetic storage element comprises a spin momentum transfer device.
6. A memory circuit, the memory circuit comprising:
a plurality of memory cells,
wherein each of the plurality of memory cells comprises: (i) a magnetic storage element; (ii) at least one conductive segment electrically coupled to the magnetic storage element; and (iii) a magnetic liner surrounding at least a portion of the at least one conductive segment, the magnetic liner being operative to divert at least a portion of a magnetic field created by a current passing through the at least one conductive segment away from the magnetic storage element;
wherein the magnetic liner is situated between the at least one conductive segment and the magnetic storage element.
7. The memory circuit of claim 6 , wherein the at least one conductive segment comprises at least one of a bit line, a word line, and a read line.
8. The memory circuit of claim 6 , wherein the magnetic liner comprises at least one of nickel, iron and cobalt.
9. A method for shielding a magnetic memory cell from magnetic fields, the method comprising the steps of:
forming a magnetic storage element;
forming at least one conductive segment electrically coupled to the magnetic storage element; and
surrounding at least a portion of the at least one conductive segment with a magnetic liner, the magnetic liner being operative to divert at least a portion of a magnetic field created by a current passing through the at least one conductive segment away from the magnetic storage element;
wherein the magnetic liner is formed between the at least one conductive segment and the magnetic storage element.
10. The method of claim 9 , wherein the step of surrounding further comprises the steps of:
forming a trench proximate to the magnetic storage element; and
forming the magnetic liner on at least one surface of the trench.
11. The method of claim 10 , wherein the magnetic liner is formed on at least a portion of the at least one surface of the trench.
12. The method of claim 11 , wherein the at least one conductive segment is formed on at least one surface of the magnetic liner.
13. The method of claim 12 , further comprising the steps of:
forming a segment of magnetic liner on top of the at least one conductive segment; and
etching at least one portion of the segment of magnetic liner to create at least one opening in the magnetic liner.
14. The method of claim 9 , wherein the magnetic liner comprises at least one of nickel, iron, and cobalt.
15. A method for shielding a plurality of magnetic memory cells from respective magnetic fields, the method comprising the steps of:
forming a plurality of magnetic storage elements;
forming at least one conductive segment electrically coupled to a corresponding one of the plurality of magnetic storage elements; and
surrounding at least a portion of the at least one conductive segment with a magnetic liner, the magnetic liner being operative to divert at least a portion of a magnetic field created by a current passing through the at least one conductive segment away from the corresponding one of the plurality of magnetic storage elements;
wherein the magnetic liner is formed between the at least one conductive segment and the magnetic storage element.
16. The method of claim 15 , wherein the step of surrounding at least a portion of the at least one conductive segment with a magnetic liner further comprises:
forming a trench proximate to at least one of the plurality of magnetic storage elements; and
forming the magnetic liner on at least one surface of the trench.
17. The method of claim 16 , wherein the magnetic liner is formed on at least one portion of the at least one surface of the trench.
18. The method of claim 17 , wherein the at least one conductive segment is formed on at least one surface of the magnetic liner.
19. The method of claim 18 , further comprising the steps of:
forming a segment of magnetic liner on an upper surface of the at least one conductive segment; and
etching at least a portion of the segment of magnetic liner to create at least one opening in the magnetic liner.