Underbump metallurgy for enhanced electromigration resistance
View Patent ↗A first metallic diffusion barrier layer is formed on a last level metal plate exposed in an opening of a passivation layer. Optionally, a metallic adhesion promotion layer is formed on the first metallic diffusion barrier layer. An elemental metal conductive layer is formed on the metallic adhesion promotion layer, which provides a highly conductive structure that distributes current uniformly due to the higher electrical conductivity of the material than the layers above or below. A stack of the second metallic diffusion barrier layer and a wetting promotion layer is formed, on which a C4 ball is bonded. The elemental metal conductive layer distributes the current uniformly within the underbump metallurgy structure, which induces a more uniform current distribution in the C4 ball and enhanced electromigration resistance of the C4 ball.
1. A semiconductor structure comprising:
a metal pad located on a metal interconnect structure;
a dielectric passivation layer located over a periphery of said metal pad and containing an opening over a center portion of said metal pad;
a first metallic diffusion barrier layer located on said metal pad;
an elemental metal conductive layer comprising elemental Cu, elemental Au, elemental Ag, or elemental Ni and located on said first metallic diffusion barrier layer;
a second metallic diffusion barrier layer located on said elemental metal conductive layer, wherein said second metallic diffusion barrier layer is a stack of a conductive metal layer and a conductive metal nitride layer, said conductive metal layer comprises an elemental metal and said conductive metal nitride layer comprises a conductive metal nitride derived from said elemental metal, and wherein said second metallic diffusion barrier layer and said first metallic diffusion barrier layer comprise different materials; and
a wetting promotion layer located on said second metallic diffusion barrier layer and comprising a material that promotes wetting of a C4 ball, wherein said conductive metal layer of said second metallic diffusion barrier layer abuts said elemental metal conductive layer and said conductive metal nitride layer abuts said wetting promotion layer.
2. The semiconductor structure of claim 1 , wherein said elemental metal conductive layer comprises elemental Cu, elemental Au, or elemental Ag.
3. The semiconductor structure of claim 1 , wherein said first metallic diffusion barrier layer comprises TiN, TaN, WN, or TiW.
4. The semiconductor structure of claim 3 , wherein said first metallic diffusion barrier layer comprises a material selected from TiN, TaN, and WN.
5. The semiconductor structure of claim 3 , further comprising a metallic adhesion promotion layer comprising an elemental metal and vertically abutting said first metallic diffusion barrier layer and said elemental metal conductive layer.
6. The semiconductor structure of claim 5 , wherein said first metallic diffusion barrier comprises a nitride of said elemental metal.
7. The semiconductor structure of claim 3 , further comprising a metallic adhesion promotion layer comprising a Cr—Cu alloy and vertically abutting said first metallic diffusion barrier layer and said elemental metal conductive layer.
8. The semiconductor structure of claim 1 , wherein said wetting promotion layer is a Cu layer, a Ni layer, or a stack of a Cu layer and a Ni layer.
9. The semiconductor structure of claim 1 , wherein said metal pad comprises Al, and wherein said first metallic diffusion barrier layer vertically abuts said metal pad.
10. A semiconductor structure comprising:
a metal pad located on a metal interconnect structure;
a dielectric passivation layer located over a periphery of said metal pad and containing an opening over a center portion of said metal pad;
a first metallic diffusion barrier layer located on said metal pad;
a metallic oxidation barrier layer vertically abutting said metal pad and said first metallic diffusion barrier layer, wherein said metal pad comprises Cu;
an elemental metal conductive layer comprising elemental Cu, elemental Au, elemental Ag, or elemental Ni and located on said first metallic diffusion barrier layer;
a second metallic diffusion barrier layer located on said elemental metal conductive layer, wherein said second metallic diffusion barrier layer is selected from a Cr—Cu alloy or a stack of a conductive metal layer and a conductive metal nitride layer, said conductive metal layer comprises an elemental metal and said conductive metal nitride layer comprises a conductive metal nitride derived from said elemental metal, wherein said second metallic diffusion barrier layer and said first metallic diffusion barrier layer comprise different materials; and
a wetting promotion layer located on said second metallic diffusion barrier layer and comprising a material that promotes wetting of a C4 ball.
11. The semiconductor structure of claim 1 , further comprising a C4 ball that is soldered directly onto said wetting promotion layer.
12. A method of forming a semiconductor structure comprising:
forming a metal pad on a metal interconnect structure;
forming a first metallic diffusion barrier layer on said metal pad;
forming an elemental metal conductive layer comprising elemental Cu, elemental Au, elemental Ag, or elemental Ni on said first metallic diffusion barrier layer;
forming a second metallic diffusion barrier layer on said elemental metal conductive layer, wherein said second metallic diffusion barrier layer is a stack of a conductive metal layer and a conductive metal nitride layer, said conductive metal layer comprises an elemental metal and said conductive metal nitride layer comprises a conductive metal nitride derived from said elemental metal, and wherein said second metallic diffusion barrier layer and said first metallic diffusion barrier layer comprise different materials; and
forming a wetting promotion layer on said second metallic diffusion barrier layer, wherein said wetting promotion layer comprises a material that promotes wetting of a C4 ball, wherein said conductive metal layer abuts said elemental metal conductive layer and said conductive metal nitride layer of said second metallic diffusion barrier layer abuts said wetting promotion layer.
13. The method of claim 12 , wherein said elemental metal conductive layer comprises elemental Cu, elemental Au, or elemental Ag.
14. The method of claim 12 , wherein said first metallic diffusion barrier layer comprises TiN, TaN, WN, or TiW.
15. The method of claim 12 , wherein said wetting promotion layer is a Cu layer, a Ni layer, or a stack of a Cu layer and a Ni layer.
16. The method of claim 12 , further comprising soldering a C4 ball directly onto said wetting promotion layer.