Opto-thermal annealing methods for forming metal gate and fully silicided gate-field effect transistors
View Patent ↗An opto-thermal annealing method for forming a field effect transistor uses a reflective metal gate so that electrical properties of the metal gate and also interface between the metal gate and a gate dielectric are not compromised when opto-thermal annealing a source/drain region adjacent the metal gate. Another opto-thermal annealing method may be used for simultaneously opto-thermally annealing: (1) a silicon layer and a silicide forming metal layer to form a fully silicided gate; and (2) a source/drain region to form an annealed source/drain region. An additional opto-thermal annealing method may use a thermal insulator layer in conjunction with a thermal absorber layer to selectively opto-thermally anneal a silicon layer and a silicide forming metal layer to form a fully silicide gate.
1. A method for forming a metal gate field effect transistor comprising:
forming a titanium metal gate upon a gate dielectric formed over a semiconductor substrate, and a source region and a drain region are present in the semiconductor substrate on opposing sides of the titanium metal gate; and
opto-thermal annealing the source region and the drain region with a laser anneal to activate the source region and the drain region while avoiding opto-thermal annealing damage to the metal gate and metal gate to gate dielectric interface, wherein opto-thermal annealing damage to the metal gate and metal gate to gate dielectric interface is avoided by an opto-thermal annealing radiation reflectivity in the titanium metal gate that is at least 50 percent provided by a laser wavelength ranging from 200nm to 1200 nm, wherein the opto-thermal annealing uses a temperature ranging from 1000° to 1400° centigrade, and wherein the opto-thermal annealing uses a time period ranging from 0.01to 100 milliseconds.
2. The method of claim 1 wherein the forming the metal gate comprises forming the metal gate while using a capping layer as a hard mask, and subsequently stripping the capping layer prior to opto-thermal annealing the source region and the drain region.
3. The method of claim 1 , wherein an upper surface and sidewalls of the titanium metal gate are exposed.
4. The method of claim 1 , wherein the laser wavelength is 880 nm.
5. A method for forming a metal gate field effect transistor comprising:
forming a titanium metal gate upon a gate dielectric formed over a semiconductor substrate, wherein an upper surface and sidewalls of the titanium metal gate are exposed, and a source region and a drain region are present in the semiconductor substrate on opposing sides of the titanium metal gate; and
opto-thermal annealing the source region and the drain region with a laser anneal to activate the source region and the drain region while avoiding opto-thermal annealing damage to the metal gate and metal gate to gate dielectric interface, wherein opto-thermal annealing damage to the metal gate and metal gate to gate dielectric interface is avoided by an opto-thermal annealing radiation reflectivity in the titanium metal gate that is at least 50 percent, wherein the opto-thermal annealing uses a time period ranging from 0.01 to 100 milliseconds at a temperature ranging from 1000° C. to 1400° C.
6. The method of claim 5 wherein the forming the metal gate comprises forming the metal gate while using a capping layer as a hard mask, and subsequently stripping the capping layer prior to opto-thermal annealing the source/drain region.
7. The method of claim 5 wherein the laser annealing includes a laser wavelength ranging from 200 nm to 1200 nm.
8. The method of claim 7 wherein the laser wavelength is 880 nm.