IP Library Granted Patent US 7,852,063
Granted Patent B2
US 7,852,063 · App. 12/133,297 · Granted Dec 14, 2010

Integrated power detector with temperature compensation for fully-closed loop control

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Quick Facts
Patent No.
US 7,852,063
App. No.
12/133,297
Granted
Dec 14, 2010
Kind
B2
Abstract

An amplifier circuit comprises a detection power input circuit for receiving an RF signal, and a bias circuit that includes an output for generating a bias signal in response to a reference control voltage. The power detector further comprises a detection circuit for generating a power control voltage having a voltage characteristic that offsets temperature characteristics of the received RF signal. The amplifier circuit further comprises a power amplifier coupled to the bias circuit. The power amplifier includes a driver stage providing the RF signal. The detection circuit compensates temperature variation of the inputted detection voltage of the received RF signal.

Claims (54)

1. A power detector comprising:

a detection power input circuit for receiving an RF signal;

a bias circuit including an output for generating a bias signal in response to a reference control voltage;

a detection circuit for generating a power control voltage having a voltage characteristic that offsets temperature characteristics of the received RF signal, the detection circuit forming a current mirror with the bias circuit.

wherein a power amplifier is coupled to the bias circuit, the power amplifier comprising a driver stage and a power stage with the driver stage providing said RF signal;

wherein the driver stage comprises:

a first capacitor including a first terminal for receiving an RF power signal and including a second terminal,

a first resistor including a first terminal coupled to the second terminal of the first capacitor and including a second terminal coupled to a power control voltage terminal for receiving the power control voltage from the detection circuit,

a first transistor including a base coupled to the second terminal of the first capacitor, including an emitter coupled to a ground terminal and including a collector coupled to a detector power input terminal for providing the RF signal to the detection power input circuit, and

a first inductor including a first terminal coupled to the collector of the first transistor and including a second terminal coupled to a voltage supply terminal,

wherein the power stage comprises:

a second capacitor including a first terminal coupled to the emitter of the first transistor and including a second terminal,

a second resistor including a first terminal coupled to the second terminal of the second capacitor and including a second terminal coupled to the second terminal of the first resistor,

a second transistor including a base coupled to the second terminal of the second capacitor, including an emitter coupled to the ground terminal, and including a collector,

a second inductor including a first terminal coupled to the collector of the second transistor and including a second terminal coupled to the voltage supply terminal, and

a filter coupled between the collector of the second transistor and an RF power output terminal for providing an RF power output signal.

2. The power detector of claim 1 wherein the filter comprises:

a third capacitor including a first terminal coupled to the collector of the second transistor and including a second terminal coupled to the ground terminal,

a third inductor including a first terminal coupled to the collector of the second transistor and including a second terminal coupled to the RF power output terminal, and

a fourth capacitor including a first terminal coupled to the second terminal of the third inductor and including a second terminal coupled to the ground terminal.

3. A power detector comprising:

a detection power input circuit for receiving an RF signal;

a bias circuit including an output for generating a bias signal in response to a reference control voltage;

a detection circuit for generating a power control voltage having a voltage characteristic that offsets temperature characteristics of the received RF signal, the detection circuit forming a current mirror with the bias circuit.

wherein a power amplifier is coupled to the bias circuit, the power amplifier comprising a driver stage providing said RF signal;

wherein the detection power input circuit comprises:

a first resistor including a first terminal for receiving the RF signal and including a second terminal,

a first capacitor including a first terminal coupled to the second terminal of the first resistor and including a second terminal, and

a second resistor including a first terminal coupled to the second terminal of the first capacitor and including a second terminal,

wherein the bias circuit comprises:

a third resistor including a first terminal coupled to a reference voltage terminal and including a second terminal coupled to the second terminal of the second resistor,

a first transistor including a collector coupled to the second terminal of the third resistor, including a base coupled to said collector, and including an emitter, and

a fourth resistor including a first terminal coupled to the emitter of the first transistor and including a second terminal coupled to a ground terminal,

wherein the detection circuit comprises:

a second transistor including a collector coupled to a voltage supply terminal, including a base coupled to the first terminal of the second resistor, and including an emitter,

a fifth resistor including a first terminal coupled to the emitter of the second transistor and including a second terminal coupled to the ground terminal,

a second capacitor including a first terminal coupled to the collector of the second transistor and including a second terminal coupled to the ground terminal, and

a sixth resistor including a first terminal coupled to the collector of the second transistor and including a second terminal for providing the detector voltage output,

wherein the power amplifier comprises a driver stage and a power stage,

wherein the driver stage comprises:

a third capacitor including a first terminal for receiving an RF power signal and including a second terminal,

a seventh resistor including a first terminal coupled to the second terminal of the third capacitor and including a second terminal coupled to a power control voltage terminal for receiving the power control voltage from the detection circuit,

a third transistor including a base coupled to the second terminal of the first capacitor, including an emitter coupled to the ground terminal and including a collector coupled to a detector power input terminal for providing the RF signal to the detection power input circuit, and

a first inductor including a first terminal coupled to the collector of the third transistor and including a second terminal coupled to the voltage supply terminal,

wherein the power stage comprises:

a fourth capacitor including a first terminal coupled to the collector of the third transistor and including a second terminal,

an eighth resistor including a first terminal coupled to the second terminal of the fourth capacitor and including a second terminal coupled to the second terminal of the seventh resistor,

a fourth transistor including a base coupled to the second terminal of the fourth capacitor, including an emitter coupled to the ground terminal, and including a collector,

a second inductor including a first terminal coupled to the collector of the fourth transistor and including a second terminal coupled to the voltage supply terminal, and

a filter coupled between the collector of the fourth transistor and an RF power output terminal for providing an RF power output signal.

4. The power detector of claim 3 , wherein the filter comprises:

a fifth capacitor including a first terminal coupled to the collector of the fourth transistor and including a second terminal coupled to the ground terminal,

a third inductor including a first terminal coupled to the collector of the fourth transistor and including a second terminal coupled to the RF power output terminal, and

a sixth capacitor including a first terminal coupled to the second terminal of the third inductor and including a second terminal coupled to the ground terminal.

Assignments (16)
RELEASE OF SECURITY INTEREST Recorded Mar 14, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 060894/0437 →
RELEASE OF SECURITY INTEREST Recorded Mar 11, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059363/0001 →
RELEASE OF SECURITY INTEREST Recorded Mar 10, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059863/0400 →
RELEASE OF SECURITY INTEREST Recorded Mar 9, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059358/0001 →
RELEASE OF SECURITY INTEREST Recorded Feb 28, 2022
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED
Reel/Frame 059666/0545 →
RELEASE OF SECURITY INTEREST Recorded Feb 25, 2022
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059333/0222 →
SECURITY INTEREST Recorded Jun 4, 2021
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 057935/0474 →
SECURITY INTEREST Recorded Dec 24, 2020
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 055671/0612 →
SECURITY INTEREST Recorded Jun 5, 2020
From: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION
Reel/Frame 053468/0705 →
RELEASE OF SECURITY INTEREST Recorded May 30, 2020
From: JPMORGAN CHASE BANK, N.A, AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 053466/0011 →
SECURITY INTEREST Recorded Apr 24, 2020
From: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 053311/0305 →
SECURITY INTEREST Recorded Sep 18, 2018
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 047103/0206 →
SECURITY INTEREST Recorded Jun 25, 2018
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 046426/0001 →
SECURITY INTEREST Recorded Feb 10, 2017
From: MICROCHIP TECHNOLOGY INCORPORATED
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 041675/0617 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 3, 2011
From: SILICON STORAGE TECHNOLOGY, INC.
To: MICROCHIP TECHNOLOGY INCORPORATED
Reel/Frame 026213/0515 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 4, 2008
From: KOBAYASHI, BUN; ZHANG, LIYANG; CHANG, MAU-CHUNG FRANK; CHOW, PEI-MING DANIEL
To: SILICON STORAGE TECHNOLOGY, INC.
Reel/Frame 021046/0853 →