Substantially L-shaped silicide for contact

1. A structure for a semiconductor device, the structure comprising:

a substantially L-shaped silicide element including a base member and an extended member,

wherein the base member extends at least partially into a shallow trench isolation (STI) region such that a bottom substantially horizontal surface of the base member directly contacts a top substantially horizontal surface of the STI region, and

wherein a top surface of the substantially L-shaped silicide element is aligned with a top surface of a source/drain region; and

a contact contacting the substantially L-shaped silicide element.

2. The structure of claim 1 , wherein the contact includes a notch region for mating with the substantially L-shaped silicide element, and

wherein the notch region connects to the base member and a portion of the extended member.

3. The structure of claim 1 , wherein the substantially L-shaped silicide element extends about the source/drain region of a transistor, and

wherein the contact directly contacts the STI region.

4. The structure of claim 3 , wherein the base member extends at least partially into silicon of the source/drain region to a depth that is shallower than a source/drain junction depth.

5. The structure of claim 1 , further comprising a plurality of contacts, and

wherein a first contact for a first transistor is staggered relative to an adjacent, second contact for a second transistor along the isolation region, and

wherein the substantially L-shaped silicide element is recessed into the source/drain region of a transistor.

6. The structure of claim 1 , wherein the source/drain region includes a silicon-germanium member for a P-type semiconductor device, or a silicon-carbon member for an N-type semiconductor device.