IP Library Granted Patent US 8,039,943
Granted Patent B2
US 8,039,943 · App. 12/239,566 · Granted Oct 18, 2011

Semiconductor device and manufacturing method therefor

Assignee: Spansion, LLC
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Quick Facts
Patent No.
US 8,039,943
App. No.
12/239,566
Granted
Oct 18, 2011
Kind
B2
Abstract

A semiconductor device is provided that includes a semiconductor chip and a resin section that molds the semiconductor chip and has a first through-hole. A through electrode that is electrically coupled to the semiconductor chip, extends through the resin section, and extends between a top edge and a bottom edge of an inner surface of the first through-hole. A cavity which extends between planes corresponding to an upper surface and a lower surface of the resin section is formed inside the first through-hole.

Claims (7)

1. A semiconductor device comprising:

a semiconductor chip;

a resin section that encases the semiconductor chip, and has a first through-hole; and

a through electrode that is electrically coupled to the semiconductor chip, and extends through the resin section and through a top edge and a bottom edge of an inner surface of the first through-hole, wherein a cavity which extends between planes corresponding to an upper surface and a lower surface of the resin section is formed inside the first through-hole and wherein the through electrode is formed so that the first through-hole is closed above the plane corresponding to the upper surface of the resin section and the semiconductor device is one of a stack of more than one semiconductor devices and comprises a conductive pin that penetrates a cavity provided in each of the semiconductor devices and directly contacts the through electrode, so as to be electrically coupled with the through electrode.

2. The semiconductor device according to claim 1 , wherein an upper surface of the through electrode is coplanar with the upper surface of the resin section.

3. The semiconductor device according to claim 1 , wherein the semiconductor device is one of a stack of more than one semiconductor devices wherein a through electrode of each of the semiconductor devices of the stack contacts the other.

4. The semiconductor device according to claim 2 wherein the semiconductor device is one of a stack of more than one semiconductor devices, and comprises a conductive pin that penetrates through the cavity provided in each of the semiconductor devices, so as to be electrically coupled with the semiconductor devices.

Assignments (8)
CORRECTIVE ASSIGNMENT TO CORRECT THE 8647899 PREVIOUSLY RECORDED ON REEL 035240 FRAME 0429. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTERST. Recorded Nov 3, 2020
From: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 058002/0470 →
RELEASE OF SECURITY INTEREST Recorded Dec 22, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
Reel/Frame 041175/0939 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 14, 2016
From: CYPRESS SEMICONDUCTOR CORPORATION
To: MONTEREY RESEARCH, LLC
Reel/Frame 040908/0960 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 2, 2015
From: SPANSION, LLC
To: CYPRESS SEMICONDUCTOR CORPORATION
Reel/Frame 036050/0514 →
SECURITY INTEREST Recorded Mar 21, 2015
From: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 035240/0429 →
RELEASE OF SECURITY INTEREST Recorded Mar 13, 2015
From: BARCLAYS BANK PLC
To: SPANSION LLC; SPANSION INC.; SPANSION TECHNOLOGY LLC
Reel/Frame 035201/0159 →
SECURITY AGREEMENT Recorded Jun 4, 2010
From: SPANSION LLC; SPANSION INC.; SPANSION TECHNOLOGY INC.; SPANSION TECHNOLOGY LLC
To: BARCLAYS BANK PLC
Reel/Frame 024522/0338 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 22, 2008
From: HARAYAMA, MASAHIKO; MEGURO, KOUICHI; KASAI, JUNICHI
To: SPANSION LLC
Reel/Frame 022017/0274 →
Priority Claims (1)
JP 2007-254537 · Sep 28, 2007 · national
Continuity (1)
Related Publication 20090250800A1 · Oct 8, 2009