Granted Patent B2

US 8,093,140 · App. 12/263,403 · Granted Jan 10, 2012

Abstract

Claims (108)

1. A method of forming a smooth, amorphous germanium-containing film on a substrate by a vapor deposition process, comprising volatilizing a germanium precursor to form a germanium precursor vapor, optionally combining the precursor vapor with a component selected from the group consisting of ammonia, hydrogen, helium, argon, and nitrogen, and contacting the precursor vapor with a substrate for vapor deposition of the germanium-containing film thereon, wherein the germanium precursor is of the formula

[{ n BuC( i PrN) 2 } 2 Ge].

2. The method of claim 1 , wherein the germanium-containing film further comprises tellurium, said method comprising volatilizing a tellurium precursor to form a tellurium precursor vapor, and contacting the tellurium precursor vapor with the substrate for vapor deposition of the film thereon.

3. The method of claim 2 , wherein the tellurium precursor is selected from the group consisting of tellurium compositions of the formulae:

R 1 TeR 2

wherein:

R 1 and R 2 may be the same as or different from one another, and are independently selected from among H, C 1 -C 6 alkyl, C 5 -C 10 cycloalkyl, C 6 -C 10 aryl, and —Si(R 3 ) 3 wherein each R 3 is independently selected from C 1 -C 6 alkyl;

R 1 Te(NR 2 R 3 )

wherein:

R 1 , R 2 and R 3 may be the same as or different from one another, and are independently selected from among H, C 1 -C 6 alkyl, C 5 -C 10 cycloalkyl, C 6 -C 10 aryl, and —Si(R 3 ) 3 wherein each R 3 is independently selected from C 1 -C 6 alkyl;

R 1 Te—TeR 2

wherein:

R 1 and R 2 may be the same as or different from one another, and are independently selected, from among H, C 1 -C 6 alkyl, C 5 -C 10 cycloalkyl, C 6 -C 10 aryl, and —Si(R 3 ) 3 wherein each R 3 is independently selected from C 1 -C 6 alkyl;

tellurium complexes with beta-diketiminate ligands,

wherein R 1 , R 2 and R 3 they be the same as or different from one another, and each is independently selected from C 1 -C 6 alkyl, C 6 -C 10 aryl, silyl and C 1 -C 12 alkylamine (which includes both monoalkylamine as well as dialkylamine); and

wherein R 1 , R 2 and R 3 they be the same as or different from one another, and each is independently selected from C 1 -C 6 alkyl, C 6 -C 10 aryl, silyl and C 1 -C 12 alkylamine (which includes both monoalkylamine as well as dialkylamine).

4. The method of claim 2 , wherein the germanium- and tellurium-containing film further comprises antimony, said method comprising volatilizing an antimony precursor to form an antimony precursor vapor, and contacting the antimony precursor vapor with the substrate for vapor deposition of the film thereon.

5. The method of claim 4 , wherein the antimony precursor is selected from the group consisting of antimony compositions of the formulae:

Sb(NR 1 R 2 )(R 3 N(CR 5 R 6 ) m NR 4 )

wherein:

R 1 , R 2 , R 3 , and R 4 may be the same as or different from one another, and are independently selected from C 1 -C 6 alkyl, C 3 -C 6 cycloalkyl, C 2 -C 6 alkenyl, C 3 -C 6 alkylsilyl, C 6 -C 10 aryl,

each of R 5 and R 6 may be the same as or different from one another and are independently selected from hydrogen, C 1 -C 6 alkyl, C 3 -C 6 cycloalkyl, C 2 -C 6 alkenyl (e.g., vinyl, allyl, etc.), C 3 -C 6 alkylsilyl, and C 6 -C 10 aryl; and

m is an integer from 1 to 4 inclusive;

Sb(R 1 )(R 2 N(CR 4 R 5 ) m NR 3 )

wherein:

R 1 , R 2 , and R 3 may be the same as or different from one another, and are independently selected from C 1 -C 6 alkyl, C 3 -C 6 cycloalkyl, C 2 -C 6 alkenyl (e.g., vinyl, allyl, etc.), C 3 -C 6 alkylsilyl, and C 6 -C 10 aryl;

each of R 4 and R 5 may be the same as or different from one another and is independently selected from hydrogen, C 1 -C 6 alkyl, C 3 -C 6 cycloalkyl, C 2 -C 6 alkenyl (e.g., vinyl, allyl, etc.), C 3 -C 6 alkylsilyl, and C 6 -C 30 aryl; and

m is an integer from 1 to 4 inclusive;

Sb(R 1 ) 3-n (NR 2 R 3 ) n

wherein:

R 1 , R 2 and R 3 may be the same as or different from one another and are independently selected from hydrogen, C 1 -C 6 alkyl, C 3 -C 6 cycloalkyl, C 2 -C 6 alkenyl (e.g., vinyl, allyl, etc.), silyl, C 3 -C 6 alkylsilyl, C 6 -C 10 aryl and —NR 4 R 5 , wherein each of R 4 and R 5 is selected from among H and C 1 -C 4 ; and

n is an integer from 0 to 3 inclusive.

(R 4 ) n Sb(E(R 1 R 2 R 3 )) 3-n

wherein:

R 1 , R 2 , R 3 , and R 4 may be the same as or different from one another, and are independently selected from C 1 -C 6 alkyl, C 3 -C 6 cycloalkyl, C 3 -C 6 alylsilyl, C 6 -C 10 aryl, and alkylamino of the formula —NR 5 R 6 wherein each of R 5 and R 6 is independently selected from H and C 1 -C 4 alkyl;

E is silicon (Si) or germanium (Ge); and

n is an integer from 0 to 3 inclusive;

amimidates, guanidates and isoureates of the formula:

R 7 n Sb[R 1 NC(X) NR 2 ] 3-n

where each R 1 and R 2 is independently selected from among H, C 1 -C 6 alkyl, C 5 -C 10 cycloalkyl, C 6 -C 10 aryl, and —Si(R 3 ) 3 wherein each R 3 is independently selected from C 1 -C 6 alkyl;

each X is independently selected from among C 1 -C 6 alkoxy, —NR 4 R 5 , and —C(R 6 ) 3 , wherein each of R 4 , R 5 and R 6 is independently selected from H, C 1 -C 6 alkyl, C 5 -C 10 cycloalkyl, C 6 -C 10 aryl, and —Si(R 3 ) 3 wherein each R 3 is independently selected from C 1 -C 6 alkyl;

each R 7 is independently selected from among C 1 -C 6 alkoxy, —NR 8 R 9 , and —C(R 10 ) 3 , wherein each of R 8 , R 9 and R 11 ) is independently selected from H, C 1 -C 6 alkyl, C 5 -C 10 cycloalkyl, C 6 -C 10 aryl, —Si(R 3 ) 3 , and —Ge(R 3 ) 3 wherein each R 3 is independently selected from C 1 -C 6 alkyl; and

n is an integer from 0 to 3;

tetra-alkyl guanidates of the formula:

R 5 n Sb[(R 1 R 2 )NC(NR 3 R 4 )N)] 3-n

wherein:

each of R 1 and R 2 is independently selected from among H, C 1 -C 6 alkyl, C 5 -C 10 cycloalkyl, C 6 -C 10 aryl, and —Si(R 9 ) 3 wherein each R 9 is independently selected from C 1 -C 6 alkyl;

each of R 3 and R 4 is independently selected from H, C 1 -C 6 alkyl, C 5 -C 10 cycloalkyl, C 6 ″ C 10 aryl, and —Si(R 9 ) 3 wherein each R 9 is independently selected from C 1 -C 6 alkyl;

each R 5 is independently selected from among C 1 -C 6 alkoxy, —NR 6 R 7 , and —C(R 8 ) 3 , wherein each of R 6 , R 7 and R 8 is independently selected from H, C 1 -C 6 alkyl, C 5 -C 10 cycloalkyl, C 6 -C 10 aryl, —Si(R 9 ) 3 , and —Ge(R 9 ) 3 wherein each R 9 is independently selected from C 1 -C 6 alkyl; and

n is an integer from 0 to 3;

carbamates and thiocarbamates of the formula:

R 4 n Sb[(EC(X)E] 3-n

wherein:

each X is independently selected from among C 1 -C 6 alkoxy, —NR 1 R 2 , and —C(R 3 ) 3 , wherein each of R 1 , R 2 and R 3 is independently selected from H, C 1 -C 6 alkyl, C 5 -C 10 cycloalkyl, C 6 -C 10 aryl, and —Si(R 5 ) 3 wherein each R 5 is independently selected from C 1 -C 6 alkyl;

each R 4 is independently selected from among C 1 -C 6 alkoxy, —NR 1 R 2 , and —C(R 3 ) 3 , wherein each of R 1 , R 2 and R 3 is independently selected from H, C 1 -C 6 alkyl, C 5 -C 10 cycloalkyl, C 6 -C 10 aryl, and —Si(R 5 ) 3 , —Ge(R 5 ) 3 wherein each R 5 is independently selected from C 1 -C 6 alkyl;

E is either O or S; and

n is an integer from 0 to 3;

beta-diketonates, diketoiminates, and diketiiminates, of the formulae:

[OC(R 3 )C(X)C(R 2 )O] 3-n Sb(R 5 ) n

[OC(R 3 )C(X)C(R 2 )N(R 1 )] 3-n Sb(R 5 ) n

[R 4 NC(R 3 )C(X)C(R 2 )N(R 1 )] 3-n Sb(R 5 ) n

[(R 3 )OC(═O)C(X)C(R 2 )S] 3-n Sb(R 5 ) n

where each of R 1 , R 2 , R 3 and R 4 is independently selected from among H, C 1 -C 6 alkyl, C 5 -C 10 cycloalkyl, C 6 -C 10 aryl, and —Si(R 6 ) 3 wherein each R 6 is independently selected from C 1 -C 6 alkyl;

each X is independently selected from among C 1 -C 6 alkoxy, —NR 6 R 7 , and —C(R 8 ) 3 , wherein each of R 6 , R 7 and R 8 is independently selected from H, C 1 -C 6 alkyl, C 5 -C 10 cycloalkyl, C 6 -C 10 aryl, and —Si(R 6 ) 3 wherein each R 6 is independently selected from C 1 -C 6 alkyl;

each R 5 is independently selected from among guanidinate, amimidate, isoureate, allyl, C 1 -C 6 alkoxy, —NR 9 R 10 , and —C(R 11 ) 3 , wherein each of R 9 , R 10 and R 11 is independently selected from H, C 1 -C 6 alkyl, C 5 -C 10 cycloalkyl, C 6 -C 10 aryl, —Si(R 6 ) 3 , and —Ge(R 6 ) 3 wherein each R 6 is independently selected from C 1 -C 6 alkyl; and

n is an integer from 0 to 3.

allyls of the formulae:

R 4 n Sb[R 1 NC(X)C(R 2 R 3 )] 3-n   (i)

R 4 n Sb[(R 1 O)NC(X)C(R 2 R 3 ))] 3-n   (ii)

R 4 n Sb[(R 1 R 5 )NC(X)C(R 2 R 3 ))] 3-n   (iii)

R 4 n Sb[(ONC(X)C(R 2 R 3 ))]  (iv)

where each R 1 , R 2 , R 3 and R 5 is independently selected from among H, C 1 -C 6 alkyl, C 5 -C 10 cycloalkyl, C 6 -C 10 aryl, and —Si(R 6 ) 3 wherein each R 6 is independently selected from C 1 -C 6 alkyl;

each X is independently selected from among C 1 -C 6 alkoxy, —NR 1 R 2 , and —C(R 3 ) 3 , wherein each of R 1 , R 2 and R 3 is independently selected from H, C 1 -C 6 alkyl, C 5 -C 10 cycloalkyl, C 6 -C 10 aryl, and —Si(R 6 ) 3 wherein each R 6 is independently selected from C 1 -C 6 alkyl;

each R 4 is independently selected from among guanidinates, amimidates, isoureates, beta-diketonates, diketoiminates, diketiiminates, C 1 -C 6 alkoxy, —NR 7 R 8 , and —C(R 9 ) 3 , wherein each of R 7 , R 8 and R 9 is independently selected from H, C 1 -C 6 alkyl, C 5 -C 10 cycloalkyl, C 6 -C 10 aryl, —Si(R 6 ) 3 , and —Ge(R 6 ) 3 wherein each R 6 is independently selected from C 1 -C 6 alkyl; and

n is an integer from 0 to 3;

cyclopentadienyl (Cp) antimony compounds wherein the Cp moiety is of the formulae:

wherein each of R 1 , R 2 , R 3 , R 4 and R 5 can be the same as or different from the others, and each is independently selected from among hydrogen, C 1 -C 12 alkyl, C 1 -C 12 alkylamino, C 6 -C 10 aryl, C 1 -C 12 alkoxy, C 3 -C 6 alkylsilyl, C 2 -C 12 alkenyl, R 1 R 2 NNR 3 , wherein R 1 , R 2 and R 3 may be the same as or different from one another and each is independently selected from C 1 -C 6 alkyl, and pendant ligands including functional group(s) providing further coordination to the antimony central atom, and selected from among aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl, and acetylalkyl, having the following formulae:

wherein: the methylene (—CH 2 —) moiety could alternatively be another divalent hydrocarbyl moiety; each of R 1 -R 4 is the same as or different from one another, with each being independently selected from among hydrogen, C 1 -C 6 alkyl and C 6 -C 10 aryl; each of R 5 and R 6 is the same as or different from the other, with each being independently selected from among C 1 -C 6 alkyl; n and m are each selected independently as having a value of from 0 to 4, with the proviso that m and n cannot be 0 at the same time, and x is selected from 1 to 5;

wherein each of R 1 -R 4 is the same as or different from one another, with each being independently selected from among hydrogen, C 1 -C 6 alkyl, and C 6 -C 10 aryl; R 5 is selected from among C 1 -C 6 alkyl, and C 6 -C 10 aryl; and n and m are selected independently as having a value of from 0 to 4, with the proviso that m and n cannot be 0 at the same time;

wherein each of R 1 , R 2 , R 3 , R 4 , R 5 is the same as or different from one another, with each being independently selected from among hydrogen, C 1 -C 6 alkyl, and C 6 -C 10 aryl; each of R 1 ′, R 2 ′ is the same as or different from one another, with each being independently selected from C 1 -C 6 alkyl, and C 6 -C 10 aryl; and n and m are selected independently from 0 to 4, with the proviso that m and n cannot be 0 at the same time;

wherein each of R 1 -R 4 is the same as or different from one another, with each being independently selected from among hydrogen, C 1 -C 6 alkyl, and C 6 -C 10 aryl; R 5 is selected from among C 1 -C 6 alkyl, C 6 -C 10 aryl, and C 1 -C 5 alkoxy; and n and m are selected independently from 0 to 4, with the proviso that m and n cannot be 0 at the same time;

wherein non-Cp ligand(s) of the antimony Cp compound can optionally include ligands selected from the group consisting of guanidinates, amimidates, isoureates, allyls, beta-diketonates, diketoiminates, and diketiiminates; and

(M) alkyls, alkoxides and silyls with pendent ligands, of the formulae:

R 5 n Sb[R 1 R 2 )N(CH 2 ) m C(R 1 R 2 )] 3-n   (i)

R 5 n Sb[R 1 R 2 )N(CH 2 ) m Si(R 1 R 2 )] 3-n   (ii)

R 5 n Sb[(R 1 R 2 )N(CH 2 ) m O] 3-n   (iii)

where each of R 1 and R 2 is independently selected from among H, C 1 -C 6 alkyl, C 5 -C 10 cycloalkyl, C 6 -C 10 aryl, and —Si(R 3 ) 3 wherein each R 3 is independently selected from C 1 -C 6 alkyl;

each R 5 is independently selected from among guanidinates, amimidates, isoureates, beta-diketonates, diketoiminates, diketiiminates, C 1 -C 6 alkoxy, —NR 6 R 7 , and —C(R 8 ) 3 , wherein each of R 6 , R 7 and R 8 is independently selected from H, C 1 -C 6 alkyl, C 5 -C 10 cycloalkyl, C 6 -C 10 aryl, —Si(R 3 ) 3 , and —Ge(R 3 ) 3 wherein each R 3 is independently selected from C 1 -C 6 alkyl;

n is an integer from 0 to 3;

m is integer from 0 to 4.

antimony amides of the formulae

antimony (III) alkyl/amino precursors of the formulae:

and stibenes with germanium anions, of the formulae:

6. The method of claim 1 , comprising combining the precursor vapor with a component selected from the group consisting of ammonia, hydrogen, helium, argon, and nitrogen.

7. The method of claim 1 , wherein the substrate is also contacted with precursor vapor of an antimony precursor and with precursor vapor of a tellurium precursor, so that the germanium-containing film comprises a GeSbTe film, and wherein the method is carried out so as to combat precursor pre-reaction of at least one of said germanium, antimony and tellurium precursors.

8. The method of claim 1 , wherein the film is a smooth, amorphous GeTe or a GeSbTe film.

9. The method of claim 2 , wherein the tellurium precursor comprises a dialkyl tellurium compound selected from among di-tert-butyl tellurium and diisopropyl tellurium.

10. The method of claim 1 , wherein said film is deposited in a fill trench or via structure on the substrate.

11. The method of claim 1 , comprising forming a phase change random access memory device including a germanium- and tellurium-containing film of smooth, amorphous character.

12. The method of claim 1 , comprising combating pre-reaction of precursor by introducing to said process a pre-reaction-combating agent selected from the group consisting of (i) (O, N, S) organo Lewis base compounds, (ii) free radical inhibitors, and (iii) deuterium-containing reagents.

13. The method of claim 1 , for forming a smooth amorphous germanium telluride film, comprising volatilizing the germanium precursor and a diakyl tellurium precursor to form the precursor vapor and contacting the precursor vapor with the substrate to form the smooth amorphous germanium telluride film on the substrate.

14. The method of claim 1 , for forming a phase change random access memory device, comprising forming a germanium telluride film of smooth, amorphous character, including vapor deposition of germanium from said germanium precursor, wherein said vapor deposition comprises use of a dialkyl tellurium precursor, and is carried out with a co-reactant comprising ammonia.

15. The method of claim 14 , wherein said dialkyl tellurium precursor is selected from the group consisting of di-tert-butyl tellurium and diisopropyl tellurium.

16. The method of claim 1 , wherein said germanium precursor is contacted with said substrate in manufacturing a phase change random access memory device.

17. The method of claim 16 , comprising contacting the substrate with vapor of an antimony precursor comprising a trialkyl or triamido antimony compound.

18. The method of claim 17 , wherein the trialkyl or triamido antimony compound comprises tris(dimethylamino)antimony.

19. The method of claim 16 , further comprising the use of a pre-reaction-combating agent selected from the group consisting of (i) (O, N, S) organo Lewis base compounds, (ii) free radical inhibitors, and (iii) deuterium-containing reagents.

20. The method of claim 16 , wherein said germanium precursor is contacted with said substrate at temperature not exceeding 350° C.

Assignments (9)