System and method for compartmental shielding of stacked packages

1. A semiconductor device comprising:

a first substrate having a plurality of metal traces;

at least one electronic component electrically attached to a first surface of the first substrate;

a second substrate having a plurality of metal traces and attached to the first substrate;

at least one electronic component electrically attached to a first surface of the second substrate;

a first set of contacts attached to ground planes on a second surface of the second substrate and to the first surface of the first substrate, the first set of contacts placed around the at least one electronic component on the first substrate to form an RF shield; and

a single layer of a mold compound for encapsulating exposed areas of the second substrate, exposed areas the at least one electronic component electrically attached to the first surface of the second substrate, and exposed areas of the first set of contacts.

2. A semiconductor device in accordance with claim 1 further comprising a second set of contacts attached to the second surface of the second substrate and to the first surface of the first substrate to electrically couple the first substrate to the second substrate.

3. A semiconductor device in accordance with claim 1 further comprising a third set of contacts attached to the second surface of the first substrate.

4. A semiconductor device in accordance with claim 1 wherein the first set of contacts are placed around an outer perimeter of the second surface of the second substrate.

5. A semiconductor device in accordance with claim 1 wherein a width of the second substrate is less then a width of the first substrate.

6. A semiconductor device in accordance with claim 1 wherein a first set of contacts is solder balls.

7. A semiconductor device comprising:

a first substrate having a plurality of metal layers, wherein at least one metal layer is exposed on at least one side surface of the first substrate;

a first electronic component coupled to a first surface of the first substrate;

a second substrate having a plurality of metal layers and attached to the first substrate, wherein at least one metal layer is exposed on at least one side surface of the second substrate;

a second electronic component coupled to a first surface of the second substrate;

a first plurality of contacts coupled to metal traces on a second surface of the first substrate and the first surface of the second substrate;

a mold compound encapsulating the semiconductor device; and

a conductive coating applied to the mold compound and to the at least one metal layer exposed on at least one side surface of the first substrate and second substrate.

8. A semiconductor device in accordance with claim 7 wherein the conductive coating is a conformal coating.

9. A semiconductor device in accordance with claim 7 wherein the conductive coating is an over mold coating.

10. A semiconductor device in accordance with claim 7 further comprising a second plurality of contacts coupled to a second surface of the second substrate.

11. A semiconductor device in accordance with claim 7 wherein the at least one side surface of the first substrate is adjacent to the first surface of the first substrate.

12. A semiconductor device in accordance with claim 7 wherein the at least one side surface of the second substrate is adjacent to the first surface of the second substrate.

13. A semiconductor device comprising:

a first substrate having a plurality of metal traces;

at least one electronic component electrically attached to a first surface of the first substrate;

a second substrate having a plurality of metal traces and attached to the first substrate;

at least one electronic component electrically attached to a first surface of the second substrate;

means coupled to the first substrate for forming an RF shield around the at least one electronic component electrically attached to the first substrate; and

a single layer of a mold compound for encapsulating exposed areas of the second substrate, exposed areas of the at least one electronic component electrically attached to the first surface of the second substrate, and exposed areas of the means for forming the RF shield.

14. A semiconductor device in accordance with claim 13 further comprising means coupled to the second substrate for forming an RF shield around the at least one electronic component electrically attached to the second substrate.

15. A semiconductor device in accordance with claim 13 wherein the means coupled to the first substrate for forming an RF shield comprises a first set of contacts attached to ground planes on a second surface of the second substrate and to the first surface of the first substrate, the first set of contacts placed around the at least one electronic component on the first substrate.

16. A semiconductor device in accordance with claim 15 further comprising a second set of contacts formed on an outer perimeter of the first set of contacts to electrically couple the first substrate to the second substrate.

17. A semiconductor device in accordance with claim 15 wherein the first set of contacts are placed around an outer perimeter of the second surface of the second substrate.

18. A semiconductor device in accordance with claim 15 wherein a plurality of interconnects coupled to metal traces on a second surface of the first substrate and the first surface of the second substrate to electrically attach the first substrate to the second substrate.

19. A semiconductor device in accordance with claim 13 wherein the means coupled to the first substrate for forming an RF shield comprises a conductive coating applied to the mold compound and to at least one metal layer exposed on at least one side surface of the first substrate.

20. A semiconductor device in accordance with claim 14 wherein the means coupled to the second substrate for forming an RF shield comprises a conductive coating applied to the mold compound and to at least one metal layer exposed on at least one side surface of the second substrate.