Semiconductor device and method of embedding integrated passive devices into the package electrically interconnected using conductive pillars
View Patent ↗A semiconductor device has a first insulation layer formed over a sacrificial substrate. A first conductive layer is formed over the first insulating layer. Conductive pillars are formed over the first conductive layer. A pre-fabricated IPD is disposed between the conductive pillars. An encapsulant is formed around the IPD and conductive pillars. A second insulation layer is formed over the encapsulant. The conductive pillars are electrically connected to the first and second conductive layers. The first and second conductive layers each include an inductor. Semiconductor devices are mounted over the first and second insulating layer and electrically connected to the first and second conductive layers, respectively. An interconnect structure is formed over the first and second insulating layers, respectively, and electrically connected to the first and second conductive layers. The sacrificial substrate is removed. The semiconductor devices can be stacked and electrically interconnected through the conductive pillars.
1. A method of manufacturing a semiconductor device, comprising:
providing a prefabricated integrated passive device (IPD) by,
forming a metal-insulator-metal capacitor over a first substrate,
forming an inductor as a wound conductive layer over the first substrate, and
forming a resistor over the first substrate;
providing a sacrificial substrate;
forming a first insulation layer over the sacrificial substrate;
forming a first conductive layer over the first insulating layer;
forming a plurality of conductive pillars over the first conductive layer and directly connected to the first conductive layer;
after forming the conductive pillars, mounting the prefabricated IPD to the first conductive layer such that the prefabricated IPD is disposed between the conductive pillars, the prefabricated IPD being self-aligned to the first conductive layer;
mounting a discrete capacitor having a value greater than one nanofarad over the first conductive layer, the discrete capacitor being electrically connected to one of the conductive pillars;
forming an encapsulant around the prefabricated IPD, discrete capacitor, and conductive pillars;
forming a second insulation layer over the encapsulant;
forming a second conductive layer over the second insulating layer, the second conductive layer being electrically connected to the conductive pillars; and
removing the sacrificial substrate.
2. The method of claim 1 , further including:
forming a third insulation layer over the second conductive layer and second insulating layer; and
mounting a semiconductor device over third insulating layer, the semiconductor device being electrically connected to the second conductive layer and conductive pillars.
3. The method of claim 2 , wherein the semiconductor device includes a passive device or digital circuit.
4. The method of claim 1 , wherein the first or second conductive layer includes an inductor.
5. The method of claim 1 , further including forming an interconnect structure over the first insulating layer, the interconnect structure being electrically connected to the first conductive layer and conductive pillars.
6. The method of claim 1 , further including:
stacking a plurality of the semiconductor devices; and
electrically interconnecting the stacked semiconductor devices through the conductive pillars.
7. A method of manufacturing a semiconductor device, comprising:
providing a prefabricated integrated passive device (IPD) by,
forming a metal-insulator-metal capacitor over a first substrate, and
forming an inductor as a wound conductive layer over the first substrate;
providing a temporary substrate;
forming a first conductive layer over the temporary substrate;
forming a plurality of conductive pillars over the first conductive layer directly contacting the first conductive layer;
after forming the conductive pillars, mounting the prefabricated IPD to the first conductive layer such that the prefabricated IPD is disposed between the conductive pillars, the prefabricated IPD being self-aligned to the first conductive layer;
mounting a discrete capacitor over the first conductive layer, the discrete capacitor being electrically connected to one of the conductive pillars;
forming an encapsulant around the prefabricated IPD, discrete capacitor, and conductive pillars;
forming a first insulation layer over the encapsulant and conductive pillars;
forming a second conductive layer over the first insulating layer, the second conductive layer being electrically connected to the conductive pillars; and
removing the temporary substrate.
8. The method of claim 7 , further including:
forming a third conductive layer over the first conductive layer; and
forming a second insulation layer over the third conductive layer.
9. The method of claim 7 , wherein the first or second conductive layer includes an inductor.
10. The method of claim 7 , further including mounting a semiconductor device over the second conductive layer, the semiconductor device being electrically connected to the conductive pillars.
11. The method of claim 7 , further including forming an interconnect structure over the first conductive layer, the interconnect structure being electrically connected to the conductive pillars.
12. The method of claim 7 , further including:
stacking a plurality of the semiconductor devices; and
electrically interconnecting the stacked semiconductor devices through the conductive pillars.
13. The method of claim 7 , further including forming a second insulating layer between the first insulating layer and prefabricated IPD.
14. A method of manufacturing a semiconductor device, comprising:
providing a prefabricated integrated passive device (IPD) by forming a metal-insulator-metal capacitor or an inductor as a wound conductive layer over a substrate;
providing a first interconnect structure;
forming a plurality of conductive pillars over the first interconnect structure, the conductive pillars directly contacting the first interconnect structure;
mounting a discrete capacitor over the first interconnect structure, the discrete capacitor being electrically connected to one of the conductive pillars;
after forming the conductive pillars, mounting the prefabricated IPD to the first interconnect structure between the conductive pillars, the prefabricated IPD being self-aligned to the first interconnect structure; and
forming an encapsulant around the prefabricated IPD and conductive pillars.
15. The method of claim 14 , further including:
forming a second interconnect structure over the encapsulant; and
mounting a semiconductor device over the second interconnect structure.
16. The method of claim 15 , wherein the first or second interconnect structure includes an inductor.
17. The method of claim 14 , further including:
stacking a plurality of the semiconductor devices; and
electrically interconnecting the stacked semiconductor devices through the conductive pillars.
18. A method of manufacturing a semiconductor device, comprising:
forming a first interconnect structure;
attaching a plurality of conductive pillars directly to the first interconnect structure;
after attaching the conductive pillars to the first interconnect structure, mounting a prefabricated integrated passive device (IPD) to the first interconnect structure between the conductive pillars, the prefabricated IPD being self-aligned to the first interconnect structure; and
mounting a discrete capacitor over the first interconnect structure, the discrete capacitor being electrically connected to one of the conductive pillars.
19. The method of claim 18 , further including:
forming a second interconnect structure over the encapsulant; and
mounting a semiconductor device over the second interconnect structure.
20. The method of claim 19 , wherein the first or second interconnect structure includes an inductor.
21. The method of claim 18 , further including:
stacking a plurality of the semiconductor devices; and
electrically interconnecting the stacked semiconductor devices through the conductive pillars.