Semiconductor device and method of forming a shielding layer over a semiconductor die after forming a build-up interconnect structure
View Patent ↗A semiconductor device is made by forming a build-up interconnect structure over a substrate. A semiconductor die is mounted to the build-up interconnect structure. The semiconductor die is electrically connected to the build-up interconnect structure. A ground pad is formed on the build-up interconnect structure. An encapsulant is formed over the semiconductor die and build-up interconnect structure. A shielding cage can be formed over the semiconductor die prior to forming the encapsulant. A shielding layer is formed over the encapsulant after forming the build-up interconnect structure to isolate the semiconductor die from inter-device interference. The shielding layer conforms to a geometry of the encapsulant and electrically connects to the ground pad. The shielding layer can be electrically connected to ground through a conductive pillar. The substrate is removed. A backside interconnect structure is formed over the build-up interconnect structure, opposite the semiconductor die.
1. A method of making a semiconductor device, comprising:
providing a substrate;
forming a build-up interconnect structure over the substrate;
mounting a semiconductor die to the build-up interconnect structure, the semiconductor die being electrically connected to the build-up interconnect structure;
forming a ground pad on the build-up interconnect structure;
forming an encapsulant over the semiconductor die and the build-up interconnect structure;
forming a shielding layer over the encapsulant after forming the build-up interconnect structure to isolate the semiconductor die from inter-device interference, the shielding layer conforming to a geometry of the encapsulant and electrically connecting to the ground pad;
removing the substrate; and
forming a backside interconnect structure over the build-up interconnect structure, opposite the semiconductor die.
2. The method of making a semiconductor device according to claim 1 , further including forming a shielding cage over the semiconductor die prior to forming the encapsulant.
3. The method of making a semiconductor device according to claim 1 , wherein the build-up interconnect structure includes:
forming a plurality of conductive layers; and
forming a plurality of insulating layers between the conductive layers.
4. The method of making a semiconductor device according to claim 1 , wherein a side of the encapsulant has a tapered or vertical geometry.
5. The method of making a semiconductor device according to claim 1 , wherein the shielding layer electrically connects to the ground pad at an incline or straight profile.
6. The method of making a semiconductor device according to claim 1 , wherein the ground pads are formed as islands or ring around a peripheral region of the substrate.
7. A method of making a semiconductor device, comprising:
providing a substrate;
forming a build-up interconnect structure over the substrate;
mounting a semiconductor die to the build-up interconnect structure, the semiconductor die being electrically connected to the build-up interconnect structure;
forming a shielding cage over the semiconductor die after forming the build-up interconnect structure to isolate the semiconductor die from inter-device interference, the shielding cage being electrically connected to a ground point;
forming an encapsulant over the semiconductor die, the shielding cage, and the build-up interconnect structure; and
removing the substrate.
8. The method of making a semiconductor device according to claim 7 , further including forming a backside interconnect structure over the build-up interconnect structure, opposite the semiconductor die.
9. The method of making a semiconductor device according to claim 7 , further including forming a shielding layer over the encapsulant, the shielding layer conforming to a geometry of the encapsulant and electrically connecting to the ground point.
10. The method of making a semiconductor device according to claim 7 , further including forming a conductive pillar to electrically connect the shielding layer to the ground point.
11. The method of making a semiconductor device according to claim 10 , wherein the conductive pillar is implemented with a plurality of studs or bumps or as a rod of conductive material.
12. The method of making a semiconductor device according to claim 7 , wherein the build-up interconnect structure includes:
forming a plurality of conductive layers; and
forming a plurality of insulating layers between the conductive layers.
13. The method of making a semiconductor device according to claim 7 , wherein the shielding layer electrically connects to the ground point at an incline or straight profile.
14. A method of making a semiconductor device, comprising:
providing a substrate;
forming a build-up interconnect structure over the substrate;
mounting a semiconductor die to the build-up interconnect structure;
forming an encapsulant over the semiconductor die and the build-up interconnect structure;
forming a shielding layer over the semiconductor die after forming the build-up interconnect structure to isolate the semiconductor die from inter-device interference, the shielding layer being electrically connected to a ground point; and
removing the substrate.
15. The method of making a semiconductor device according to claim 14 , wherein the semiconductor die is electrically connected to the build-up interconnect structure.
16. The method of making a semiconductor device according to claim 14 , further including forming a backside interconnect structure over the build-up interconnect structure, opposite the semiconductor die.
17. The method of making a semiconductor device according to claim 14 , further including forming a shielding cage over the semiconductor die, the shielding cage being electrically connected to the ground point.
18. The method of making a semiconductor device according to claim 14 , further including forming a conductive pillar to electrically connect the shielding layer to the ground point.
19. The method of making a semiconductor device according to claim 18 , wherein the conductive pillar is implemented with a plurality of studs or bumps or as a rod of conductive material.
20. The method of making a semiconductor device according to claim 14 , wherein the build-up interconnect structure includes:
forming a plurality of conductive layers; and
forming a plurality of insulating layers between the conductive layers.