Method for manufacturing a semiconductor component
A semiconductor component that includes a contact landing pad and a method for manufacturing the semiconductor component. A trench having sidewalls is formed in a semiconductor material and a dielectric material is formed on the sidewalls of the trench. An electrically conductive material is formed on the sidewalls and fills the trench. A multi-layer dielectric structure is formed over the electrically conductive material in the trench, where the multi-layer dielectric material is comprised of a dielectric material of one type sandwiched between dielectric materials of a different type such that an etch rate of the middle layer of dielectric material is different from those of the outer layers of dielectric material. Portions of the middle layer of dielectric material are removed and replaced with electrically conductive material that, in combination with portions of the electrically conductive material in the trench, form a contact landing pad.
1. A method for manufacturing a semiconductor component, comprising:
providing a semiconductor material having a major surface;
forming at least one trench in the semiconductor material, the at least one trench having a floor and sidewalls;
forming at least one self-aligned landing pad over and laterally adjacent to the at least one trench, wherein forming the at least one self-aligned landing pad includes:
forming a first layer of dielectric material over the major surface;
forming a second layer of dielectric material over the first layer of dielectric material;
forming a third layer of dielectric material over the second layer of dielectric material;
forming an opening through the first, second, and third layers of dielectric material; and
removing a portion of the second layer of dielectric material that is exposed by the opening extending through the first, second, and third layers of dielectric material to form cavities that extend laterally into the second layer of dielectric material.
2. The method of claim 1 , wherein the first, second, and third layers of dielectric material are oxide, nitride, and oxide, respectively.
3. The method of claim 1 , wherein removing the portion of the second layer of dielectric material includes removing the portion of the second layer of dielectric material with a wet etchant.
4. The method of claim 3 , further including forming an electrically conductive material in the at least one trench and the cavities that extend laterally into the second layer of dielectric material.
5. The method of claim 4 , further including removing the second and third layers of dielectric material.
6. The method of claim 1 , wherein forming the at least one self-aligned landing pad over and laterally adjacent to the at least one trench includes forming the at least one self-aligned landing pad over a portion of the at least one trench.
7. The method of claim 1 , further including forming sidewall spacers along the sidewalls of the at least one trench.
8. The method of claim 7 , further including forming an electrically conductive material in the at least one trench.
9. A method for manufacturing a semiconductor component, comprising:
providing a semiconductor material having a major surface;
forming a first layer of material over the major surface;
forming a second layer of material over the first layer of material;
forming a third layer of material over the second layer of material;
forming an opening that exposes a portion of the semiconductor material;
forming a trench in the semiconductor material, the trench extending from the major surface into the semiconductor material and sidewalls;
forming a cavity in the second material, the cavity extending laterally from the opening into the second material; and
forming an electrically conductive material in the trench and the cavity.
10. The method of claim 9 , wherein the first and third layers of material are oxide and the second layer of material is nitride.
11. The method of 9 , wherein the electrically conductive material is polysilicon.
12. The method of 9 , further including removing portions of the second and third materials.
13. The method of claim 9 , wherein forming the cavity includes using a wet etchant to form the cavity.
14. The method of 9 , further including forming dielectric material between the sidewalls of the trench and the electrically conductive material.