Granted Patent B2

US 8,499,440 · App. 12/380,618 · Granted Aug 6, 2013

Abstract

Claims (20)

1. A method of making a circuitized substrate, said method comprising:

providing a core dielectric layer including a supporting dielectric sub-layer including a plurality of fibers having a low coefficient of thermal expansion and a halogen-free resin, and a second dielectric sub-layer of a low moisture absorptivity resin having a moisture absorption between 0% and 0.50% when immersed in water for a period of about 24 hours at a temperature of about 22° C., and a quantity of inorganic particulates, said second dielectric sub-layer not including continuous or semi-continuous fibers or the like as part thereof, said second dielectric sub-layer being disposed proximate said supporting dielectric sub-layer; and

placing at least one circuitized layer on either of the group: said supporting dielectric sub-layer and said second dielectric sub-layer.

2. The method of claim 1 further including forming a plurality of thru-holes in said supporting and said second dielectric sub-layers each of said plurality of thru-holes having an aspect ratio of the thickness of said composite layer of said circuitized substrate to the diameter of said thru-hole within the range of from about 2:1 to about 20:1.

3. The method of claim 2 wherein said each of said plurality of thru-holes are provided within said supporting and second sub-layers using a laser.

4. The method of claim 1 , wherein said low moisture absorptivity resin of said second dielectric sub-layer of said composite dielectric layer comprises a high Tg thermosetting polymer and is also halogen-free.

5. The method of claim 1 , wherein said quantity of inorganic particulates of said second dielectric sub-layer comprise silica.

6. The method of claim 5 , wherein the particle size of said particulates are less than fifteen microns.

7. The method of claim 1 , wherein said halogen-free resin of said first dielectric sub-layer of said composite dielectric layer is also a low moisture absorptivity resin.

8. The method of claim 7 , wherein said low moisture absorptivity resin of said first dielectric sub-layer of said composite dielectric layer comprises a high Tg thermosetting polymer.

9. The method of claim 1 , wherein said first dielectric sub-layer of said composite dielectric layer has a coefficient of thermal expansion in the x and y direction less than about seventeen ppm per degree C.

10. The method of claim 1 , wherein said plurality of fibers of said first dielectric sub-layer having a low coefficient of thermal expansion are p-aramid fibers in the form of a matte.

11. The method of claim 10 , wherein said p-aramid fibers in the form of said matte have a dielectric constant of about 3.4.

12. The method of claim 1 , wherein said at least one circuitized layer comprises copper.

13. The method of claim 1 , further including a second circuitized layer positioned on said composite dielectric layer on a side opposite said at least one circuitized layer.

14. The method of claim 13 , further including second and third dielectric layers positioned on said at least one circuitized layer and said second circuitized layer, respectively, and third and fourth circuitized layers formed on said second and third dielectric layer, respectively.

15. The method of claim 14 , wherein said circuitized substrate comprises a chip carrier.

16. The method of claim 1 , further including positioning at least one electrical component on and electrically coupling said at least one electrical component to said circuitized substrate, said circuitized substrate and said at least one electrical component forming a circuitized substrate assembly.

17. The method of claim 16 , wherein said electrical component comprises a semiconductor chip.

18. The method of claim 16 , wherein said electrical component comprises a chip carrier.

Assignments (11)