Integrated circuit packaging system with warpage control system and method of manufacture thereof
View Patent ↗A method of manufacture of an integrated circuit packaging system is provided including: providing a substrate; placing a patterned layer over the substrate for substantially removing crying warpage from the substrate, the patterned layer having an opening surrounded by other openings with the substrate exposed from the patterned layer within the other openings; mounting a semiconductor chip within the opening; and attaching a component directly over the other openings, the component having a horizontal length greater than horizontal lengths of the other openings.
1. A method of manufacture of an integrated circuit packaging system comprising:
providing a substrate;
placing a patterned layer over the substrate for substantially removing crying warpage from the substrate, the patterned layer having a central opening with more than two sides surrounded by other openings having equal spacing of horizontally and vertically adjacent instances with the substrate exposed from the patterned layer within the other openings;
mounting a semiconductor chip within the opening; and
attaching a component directly over the other openings, the component having a horizontal length greater than horizontal lengths of the other openings.
2. The method as claimed in claim 1 wherein:
placing the patterned layer includes patterning during or after placing the patterned layer.
3. The method as claimed in claim 1 further comprising:
attaching a die attach adhesive to the semiconductor chip and the substrate under the semiconductor chip; and
forming the patterned layer around the semiconductor chip to a thickness to dam the die attach adhesive.
4. The method as claimed in claim 1 further comprising:
placing a patterned solder resist layer on the substrate; and wherein:
placing the patterned layer includes placing the patterned layer on the patterned solder resist layer.
5. The method as claimed in claim 1 further comprising adjusting thickness or area of coverage of the patterned layer for substantially removing crying warpage.
6. A method of manufacture of an integrated circuit packaging system comprising:
providing a substrate;
placing a patterned layer dyer the substrate for substantially removing crying warpage from the substrate, the patterned layer having a central opening in the center thereof and with more than two sides surrounded by other openings having equal spacing of horizontally and vertically adjacent instances with the substrate exposed from the patterned layer within the other openings;
mounting a semiconductor chip within the opening; and
attaching a component directly over the other openings, the component having a horizontal length greater than horizontal lengths of the other openings.
7. The method as claimed in claim 6 wherein:
placing the patterned layer includes patterning the other openings for attaching other components during or after placing the patterned layer.
8. The method as claimed in claim 6 further comprising:
attaching a die attach adhesive to the semiconductor chip and the substrate under the semiconductor chip;
forming the patterned layer to a thickness to dam the die attach adhesive in the opening.
9. The method as claimed in claim 6 further comprising:
placing a patterned solder resist layer on the substrate, the patterned solder resist layer having solder openings; and
wherein:
placing the patterned layer includes placing the patterned layer on the patterned solder resist layer, the patterned layer having the other openings larger than the solder openings.
10. The method as claimed in claim 6 further comprising adjusting co-efficient of thermal expansion value, filler loading, curing shrinkage factor, thickness, or area of coverage of the patterned layer for substantially removing crying warpage.
11. An integrated circuit packaging system comprising:
a substrate;
a patterned layer over the substrate for substantially removing crying warpage from the substrate, the patterned layer having a central opening with more than two sides surrounded by other openings equally spaced from horizontally and vertically adjacent instances with the substrate exposed from the patterned layer within the other openings;
a semiconductor chip mounted within the opening; and
a component directly over the other openings, the component having a horizontal length greater than horizontal lengths of the other openings.
12. The system as claimed in claim 11 wherein:
the patterned layer includes the opening formed as a square or rectangle in the patterned layer.
13. The system as claimed in claim 11 further comprising:
a die attach adhesive attached to the semiconductor chip and the substrate under the semiconductor chip; and wherein:
the patterned layer is around the semiconductor chip and formed to a thickness to dam the die attach adhesive.
14. The system as claimed in claim 11 further comprising:
a patterned solder resist layer on the substrate; and
wherein:
the patterned layer is on the patterned solder resist layer.
15. The system as claimed in claim 11 wherein the patterned layer has a thickness or area of coverage for substantially removing crying warpage.
16. The system as claimed in claim 11 wherein the patterned layer has the opening in the center thereof.
17. The system as claimed in claim 16 wherein:
the patterned layer includes the other openings for attaching other components.
18. The system as claimed in claim 16 further comprising:
a die attach adhesive attached to the semiconductor chip and the substrate under the semiconductor chip; and
wherein:
the patterned layer having a thickness to dam the die attach adhesive in the opening.
19. The system as claimed in claim 16 further comprising:
a patterned solder resist layer on the substrate, the patterned solder resist layer having solder openings; and
wherein:
the patterned layer is on the patterned solder resist layer, the patterned layer having the other openings larger than the solder openings.
20. The system as claimed in claim 16 wherein the patterned layer has a co-efficient of thermal expansion value, filler loading, curing shrinkage factor, thickness, or area of coverage of the patterned layer for substantially removing crying warpage.