Digital control interface in heterogeneous multi-chip module
View Patent ↗A front-end module comprises a plurality of chips that includes first and second functional blocks and an interconnection circuit. The first functional block is formed using a first process type and includes a digital control circuit that generates a digital control signal in response to an external control signal from outside the front end module. The second functional block is formed using a second process type and includes a digitally controlled circuit controlled by the digital control signal generated by the first functional block. The second process type is different from the first process type. The interconnection circuit couples the digital control circuit and the digitally controlled circuit to provide the digital control signal to the digitally controlled circuit. In one aspect, the first functional block may be a low noise amplifier formed by a pseudomorphic high electron mobility transistor process. The second functional block may be a power amplifier formed by a heterojunction bipolar transistor process. In another aspect, the first functional block may be a power amplifier formed by a heterojunction bipolar transistor process. The second functional block may be a low noise amplifier formed by a pseudomorphic high electron mobility transistor process.
1. A front-end module comprising: a multi-chip module comprising: a first chip comprising a first functional block formed using a first process type and including a digital control circuit that receives an external control signal at a control voltage node and generates a digital control signal; a second chip comprising a second functional block formed using a second process type and including a digitally controlled circuit controlled by the digital control signal, wherein the digitally controlled circuit is operable to amplify a radio frequency (RF) signal and furthermore comprises an RF input terminal and RF output terminal and the second process type being different from the first process type; and an interconnection circuit coupling the digital control circuit and the digitally controlled circuit to provide the digital control signal to the digitally controlled circuit.
2. The front-end module of claim 1 , wherein the first functional block is a low noise amplifier, the second functional block is a power amplifier, the first process type is a pHEMT process, and the second process type is an HBT process.
3. The front-end module of claim 1 , wherein the first functional block is a power amplifier, the second functional block is a low noise amplifier, the first process type is an HBT process, and the second process type is a pHEMT process.
4. The front-end module of claim 1 , wherein the digital control circuit generates the digital control signal in response to the external control signal received from outside the front-end module.
5. The front-end module according to claim 1 , wherein the digitally controlled circuit is a low noise amplifier comprising: a first inductor including a first terminal coupled to the RF input terminal and including a second terminal, a first resistor including a first terminal coupled to the first terminal of the first inductor and including a second terminal coupled to a ground node, a field-effect transistor including a gate coupled to the second terminal of the first inductor, and including a source and drain, a first capacitor including a first terminal coupled to the drain of the field-effect transistor and including a second terminal coupled to the RF output terminal, and a second inductor including a first terminal coupled to the drain of the field-effect transistor and including a second terminal coupled to a supply voltage; and wherein the digital control circuit comprises a second resistor including a first terminal coupled to the control voltage node and including a second terminal, a second capacitor including a first terminal coupled to the second terminal of the second resistor and including a second terminal coupled to the ground node, a bipolar transistor including a base coupled to the second terminal of the second resistor, including an emitter coupled to the ground node, and including a collector, a third resistor including a first terminal coupled to the collector of the bipolar transistor and including a second terminal coupled to an output node of the digital control circuit, and a third capacitor including a first terminal coupled to the second terminal of the third resistor and including a second terminal coupled to the ground node; and wherein the interconnection circuit having a first terminal coupled to the output node of the digital control circuit and having a second terminal coupled to the source of the field-effect transistor of the low noise amplifier.
6. The front-end module of claim 5 , wherein the interconnection circuit comprises another inductor including first and second terminals coupled to the respective first and second terminals of the interconnection circuit.
7. The front-end module of claim 5 , wherein the low noise amplifier is formed using the first process type, the digital control circuit is formed using the second process type, the first process type being different from the second process type.
8. The front-end module of claim 5 , wherein the low noise amplifier is formed using a pHEMT process and the digital control circuit is formed using a HBT process.
9. The front-end module according to claim 1 , wherein the digitally controlled circuit is a power amplifier comprising: a first bipolar transistor including a collector, including a base, and including an emitter coupled to a ground node, a second bipolar transistor including a collector coupled to a voltage terminal, including a base coupled to the collector of the first bipolar transistor, and including an emitter coupled to the base of the first bipolar transistor, a first resistor including a first terminal coupled to the emitter of the second bipolar transistor and including a second terminal coupled to the ground node, a first inductor including a first terminal coupled to the emitter of the second bipolar transistor and including a second terminal, a first capacitor including a first terminal coupled to the RF input terminal and including a second terminal coupled to the second terminal of the first inductor, a third bipolar transistor including a base coupled to the second terminal of the first capacitor, including an emitter coupled to the ground node, and including a collector, a second inductor including a first terminal coupled to the voltage terminal and including a second terminal coupled to the collector of the third bipolar transistor, and a second capacitor including a first terminal coupled to the collector of the third bipolar transistor and including a second terminal coupled to the RF output terminal; and wherein the digital control circuit comprises: a second resistor including a first terminal coupled to the control voltage node and including a second terminal, a third capacitor including a first terminal coupled to the second terminal of the second resistor and including a second terminal coupled to the ground node, a field-effect transistor including a gate coupled to the second terminal of the second resistor, including a drain, and including a source coupled to the collector of the first bipolar transistor, and a third resistor including a first terminal coupled to the drain of the field-effect transistor and including a second terminal coupled to a second voltage terminal.
10. The front-end module of claim 9 , wherein the interconnection circuit is a single wire interconnect coupled between the source of the field-effect transistor and the collector of the first bipolar transistor.
11. The front-end module of claim 9 , wherein the power amplifier is formed using the first process type, the digital control circuit is formed using the second process type, the first process type being different from the second process type.
12. The front-end module of claim 9 wherein the power noise amplifier is formed using a HBT process and the digital control circuit is formed using a pHEMT process.
13. A method for making a front-end module, the method comprising: forming a digital control circuit in a first functional block using a first process type on a first chip, the digital control circuit receiving an external control signal and generating a digital control signal; forming a digitally controlled circuit in a second functional block using a second process type on a second chip, the digitally controlled circuit operating in response to the digital control signal and amplifying a radio frequency (RF) signal received through an RF input and outputting the amplified RF signal through an RF output and; forming an interconnection circuit to couple the digital control circuit of the first chip and the digitally controlled circuit of the second chip for communicating the digital control signal there between; and forming the digital control circuit, the digitally controlled circuit, and the interconnection circuit in a multi-chip arrangement within the front-end module.
14. The method of claim 13 , wherein the front-end module is a heterogeneous multi-chip module.
15. A front-end module comprising: a multi-chip module comprising: a first chip comprising a first functional block formed using a first process type and including a digital control circuit that generates a digital control signal; a second chip comprising a second functional block formed using a second process type and including a digitally controlled circuit controlled by the digital control signal, the second process type being different from the first process type; and an interconnection circuit coupling the digital control circuit and the digitally controlled circuit to provide the digital control signal to the digitally controlled circuit, wherein the digitally controlled circuit is a low noise amplifier comprising:
a first inductor including a first terminal coupled to an RF input terminal and including a second terminal,
a first resistor including a first terminal coupled to the first terminal of the first inductor and including a second terminal coupled to a ground node,
a field-effect transistor including a gate coupled to the second terminal of the first inductor, and including a source and drain,
a first capacitor including a first terminal coupled to the drain of the field-effect transistor and including a second terminal coupled to an RF output terminal, and
a second inductor including a first terminal coupled to the drain of the field-effect transistor and including a second terminal coupled to a supply voltage;
and wherein the digital control circuit comprises:
a second resistor including a first terminal coupled to a control voltage node and including a second terminal,
a second capacitor including a first terminal coupled to the second terminal of the second resistor and including a second terminal coupled to the ground node,
a bipolar transistor including a base coupled to the second terminal of the second resistor, including an emitter coupled to the ground node, and including a collector,
a third resistor including a first terminal coupled to the collector of the bipolar transistor and including a second terminal coupled to an output node of the digital control circuit, and
a third capacitor including a first terminal coupled to the second terminal of the third resistor and including a second terminal coupled to the ground node;
and wherein the interconnection circuit having a first terminal coupled to the output node of the digital control circuit and having a second terminal coupled to the source of the field-effect transistor of the low noise amplifier.
16. A front-end module comprising: a multi-chip module comprising: a first chip comprising a first functional block formed using a first process type and including a digital control circuit that generates a digital control signal; a second chip comprising a second functional block formed using a second process type and including a digitally controlled circuit controlled by the digital control signal, the second process type being different from the first process type; and an interconnection circuit coupling the digital control circuit and the digitally controlled circuit to provide the digital control signal to the digitally controlled circuit, wherein the digitally controlled circuit is a power amplifier comprising:
a first bipolar transistor including a collector, including a base, and including an emitter coupled to a ground node,
a second bipolar transistor including a collector coupled to a voltage terminal, including a base coupled to the collector of the first bipolar transistor, and including an emitter coupled to the base of the first bipolar transistor,
a first resistor including a first terminal coupled to the emitter of the second bipolar transistor and including a second terminal coupled to the ground node,
a first inductor including a first terminal coupled to the emitter of the second bipolar transistor and including a second terminal,
a first capacitor including a first terminal coupled to an RF input terminal and including a second terminal coupled to the second terminal of the first inductor,
a third bipolar transistor including a base coupled to the second terminal of the first capacitor, including an emitter coupled to the ground node, and including a collector,
a second inductor including a first terminal coupled to the voltage terminal and including a second terminal coupled to the collector of the third bipolar transistor, and
a second capacitor including a first terminal coupled to the collector of the third bipolar transistor and including a second terminal coupled to an output node;
and wherein the digital control circuit comprises:
a second resistor including a first terminal coupled to a control voltage node and including a second terminal,
a third capacitor including a first terminal coupled to the second terminal of the second resistor and including a second terminal coupled to the ground node,
a field-effect transistor including a gate coupled to the second terminal of the second resistor, including a drain, and including a source coupled to the collector of the first bipolar transistor, and
a third resistor including a first terminal coupled to the drain of the field-effect transistor and including a second terminal coupled to a second voltage terminal.