Stacked semiconductor devices including a master device
View Patent ↗A stack that includes non-volatile memory devices is disclosed. One of the non-volatile memory devices in the stack is a master device, and the remaining memory device or devices is a slave device(s).
1. A system comprising:
a stack including:
a first non-volatile memory chip; and
a second non-volatile memory chip, the second non-volatile memory chip lacking in at least some non-core circuitries to facilitate chip size reduction; and
a plurality of electrical paths extending between the first non-volatile memory chip and the second non-volatile memory chip, the electrical paths facilitating the first non-volatile memory chip in providing the second non-volatile memory chip with signals and voltages needed for device operations.
2. The system as claimed in claim 1 further comprising at least one additional non-volatile memory chip, the first non-volatile memory chip being a master device, and the second and additional memory chips being slave devices.
3. The system as claimed in claim 1 wherein the electrical paths comprise Through-Silicon Vias.
4. The system as claimed in claim 3 further comprising a package printed circuit board, the stack connected to the package printed circuit board by flip chip and bumping.
5. The system as claimed in claim 1 wherein only the first non-volatile memory chip includes a high voltage generator.
6. The system as claimed in claim 1 wherein the voltages include high voltages for program and erase operations.
7. The system as claimed in claim 1 wherein the second non-volatile memory chip includes slave device test logic that is configured to be driven by the first non-volatile memory chip during testing.
8. The system as claimed in claim 1 wherein the first non-volatile memory chip and the second non-volatile memory chip are NAND flash memory chips.
9. The system as claimed in claim 1 wherein the first non-volatile memory chip is a master device, and the second non-volatile memory chip is a slave device.
10. The system as claimed in claim 9 wherein the electrical paths comprise Through-Silicon Vias.
11. The system as claimed in claim 10 further comprising a package printed circuit board, the stack connected to the package printed circuit board by flip chip and bumping.
12. The system as claimed in claim 11 wherein the master memory device is substantially larger dimensioned that the slave memory device, and the master memory device is positioned substantially adjacent the package printed circuit board.
13. A method comprising manufacturing first and second non-volatile memory chips that are compatible with each other, the first and second non-volatile memory chips having substantially similar core chip areas, but only the first non-volatile memory chip having a number of additional chip areas within which are located circuitries providing functionality for shared of benefit of both the first and second non-volatile memory chips, and the circuitries of the additional chip areas configured to generate signals and voltages needed for device operations in relation to both the first and second non-volatile memory chips.
14. The method as claimed in claim 13 wherein the core chip areas have a more miniaturized process technology as compared to the additional chip areas.
15. The method as claimed in claim 14 wherein the additional chip areas include a peripheral circuit area, an input and output pads area, and at least one high voltage generator area.
16. The method as claimed in claim 13 wherein the first and second non-volatile memory chips are NAND flash memory chips.
17. The method as claimed in claim 13 wherein the manufacturing includes the manufacture of at least one additional non-volatile memory chip, the first non-volatile memory chip being a master device, and the second and additional memory chips being slave devices.
18. The method as claimed in claim 13 wherein the second non-volatile memory chip includes slave device test logic that is configured to be driven by the first non-volatile memory chip during testing.
19. The method as claimed in claim 13 wherein only the first non-volatile memory chip includes a high voltage generator.
20. Apparatus comprising first and second non-volatile memory chips that are compatible with each other, the first and second non-volatile memory chips having substantially similar core chip areas, but only the first non-volatile memory chip having a number of additional chip areas within which are located circuitries providing functionality for shared of benefit of both the first and second non-volatile memory chips, and the circuitries of the additional chip areas configured to generate signals and voltages needed for device operations in relation to both the first and second non-volatile memory chips.
21. The apparatus as claimed in claim 20 wherein the core chip areas have a more miniaturized process technology as compared to the additional chip areas.
22. The apparatus as claimed in claim 21 wherein the additional chip areas include a peripheral circuit area, an input and output pads area, and at least one high voltage generator area.
23. The apparatus as claimed in claim 20 wherein the first and second non-volatile memory chips are NAND flash memory chips.
24. The apparatus as claimed in claim 20 further comprising at least one additional non-volatile memory chip, the first non-volatile memory chip being a master device, and the second and additional memory chips being slave devices.
25. The apparatus as claimed in claim 20 wherein the second non-volatile memory chip includes slave device test logic that is configured to be driven by the first non-volatile memory chip during testing.
26. The apparatus as claimed in claim 20 wherein only the first non-volatile memory chip includes a high voltage generator.