Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride
View Patent ↗Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si 3 N 4 ), siliconoxynitride (SiO x N y ) and/or silicon dioxide (SiO 2 ). The precursors of the invention are amenable to use in low temperature (e.g., <500° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
1. The compound, (EtNH) 3 Si—Si(HNEt) 3 .
2. The compound, (Bu t NH) 2 ClSi—SiCl(HNBu t ) 2 .
3. The compound, (EtNH) 2 HSi—SiH(NHEt) 2 .
4. A silicon nitride compound of formula (1):
[SiX n (NR 1 R 2 ) 3-n ] 2 (1),
wherein:
R 1 ═R 2 ═C 3 -C 6 cycloalkyl;
X is selected from the group consisting of halogen, hydrogen and deuterium; and
0<n<2.
5. A silicon nitride compound of formula (1):
[SiX n (NR 1 R 2 ) 3-n ] 2 (1)
wherein:
at least one of R 1 and R 2 is H, and the other is selected from the group consisting of H, C 1 -C 5 alkyl, and C 3 -C 6 cycloalkyl;
X is selected from the group consisting of halogen, hydrogen and deuterium; and
0<n<2.
6. A silicon nitride compound of formula (1):
[SiX n (NR 1 R 2 ) 3-n ] 2 (1)
wherein:
one of R 1 and R 2 is H, and the other is C 1 -C 5 alkyl;
X is selected from the group consisting of halogen, hydrogen and deuterium; and
0<n<2.
7. A silicon nitride compound of formula (1):
[SiX n (NR 1 R 2 ) 3-n ] 2 (1)
wherein:
one of R 1 and R 2 is H, and the other is ethyl or butyl;
X is chlorine; and
n is 0 or 1.