Semiconductor device and method of forming an interconnect structure with TSV using encapsulant for structural support
View Patent ↗A semiconductor device has a conductive via formed through in a first side of the substrate. A first interconnect structure is formed over the first side of the substrate. A semiconductor die or component is mounted to the first interconnect structure. An encapsulant is deposited over the first interconnect structure and semiconductor die or component. A portion of a second side of the substrate is removed to reduce its thickness and expose the TSV. A second interconnect structure is formed over the second side of the substrate. The encapsulant provides structural support while removing the portion of the second side of the substrate. The second interconnect structure is electrically connected to the conductive via. The second interconnect structure can include a redistribution layer to extend the conductivity of the conductive via. The semiconductor device is mounted to a printed circuit board through the second interconnect structure.
1. A method of making a semiconductor device, comprising:
providing a substrate;
forming a via in a first side of the substrate, the via extending partially through the substrate;
forming a first insulating layer in the via;
depositing an electrically conductive material in the via to form a conductive through silicon via (TSV);
forming a first interconnect structure over the first side of the substrate;
mounting a semiconductor die or a component to the first interconnect structure;
depositing an encapsulant over the first interconnect structure and semiconductor die or component;
removing a portion of a second side of the substrate, opposite the first side of the substrate, to reduce its thickness and expose the TSV; and
forming a second interconnect structure over the second side of the substrate, the second interconnect structure being electrically connected to the TSV.
2. The method of making a semiconductor device according to claim 1 , wherein forming the first interconnect structure includes:
forming a first conductive layer over the TSV;
forming a second insulating layer over the first conductive layer and substrate;
removing a portion of the second insulating layer to expose the first conductive layer;
forming a second conductive layer over the first conductive layer;
forming a third insulating layer over the second conductive layer and second insulating layer; and
removing a portion of the third insulating layer to expose the second conductive layer.
3. The method of making a semiconductor device according to claim 2 , wherein forming the first interconnect structure further includes:
forming a conductive pillar over the second conductive layer;
forming a fourth insulating layer around the conductive pillar;
forming a third conductive layer over the conductive pillar; and
electrically connecting the semiconductor die or component to the third conductive layer.
4. The method of making a semiconductor device according to claim 1 , further including mounting the semiconductor device to a printed circuit board through the second interconnect structure.
5. The method of making a semiconductor device according to claim 1 , wherein forming the second interconnect structure includes:
forming a second insulating layer over the second surface of the substrate and TSV;
removing a portion of the second insulating layer to expose the TSV; and
forming a first conductive layer over the TSV.
6. The method of making a semiconductor device according to claim 1 , wherein forming the second interconnect structure includes:
forming a second insulating layer over the second surface of the substrate and TSV;
removing a portion of the second insulating layer to expose the TSV;
forming a first conductive layer over the TSV to extend the conductivity of the TSV;
forming a third insulating layer over the second insulating layer and first conductive layer;
removing a portion of the third insulating layer to expose the first conductive layer; and
forming a second conductive layer over the first conductive layer.
7. The method of making a semiconductor device according to claim 1 , wherein the encapsulant provides structural support while removing the portion of the second side of the substrate.
8. A method of making a semiconductor device, comprising:
providing a substrate;
forming a via in a first side of the substrate;
depositing an electrically conductive material in the via to form a conductive via;
forming a first interconnect structure over the first side of the substrate;
mounting a semiconductor die or a component to the first interconnect structure;
depositing an encapsulant over the first interconnect structure and semiconductor die or component;
removing a portion of a second side of the substrate, opposite the first side of the substrate, to reduce its thickness and expose the conductive via; and
forming a second interconnect structure over the second side of the substrate, the second interconnect structure being electrically connected to the conductive via.
9. The method of making a semiconductor device according to claim 8 , wherein forming the first interconnect structure includes:
forming a first conductive layer over the conductive via;
forming a first insulating layer over the first conductive layer and substrate;
forming a second conductive layer over the first conductive layer;
forming a second insulating layer over the second conductive layer and first insulating layer;
forming a conductive pillar over the second conductive layer;
forming a third insulating layer around the conductive pillar;
forming a third conductive layer over the conductive pillar; and
electrically connecting the semiconductor die or component to the third conductive layer.
10. The method of making a semiconductor device according to claim 8 , further including mounting the semiconductor device to a printed circuit board through the second interconnect structure.
11. The method of making a semiconductor device according to claim 8 , wherein forming the second interconnect structure includes:
forming a first insulating layer over the second surface of the substrate and conductive via; and
forming a first conductive layer over the conductive via.
12. The method of making a semiconductor device according to claim 8 , wherein forming the second interconnect structure includes:
forming a first insulating layer over the substrate;
forming a first conductive layer over the conductive via to extend the conductivity of the conductive via;
forming a second insulating layer over the first insulating layer and first conductive layer; and
forming a second conductive layer over the first conductive layer.
13. The method of making a semiconductor device according to claim 8 , wherein the encapsulant provides structural support while removing the portion of the second side of the substrate.
14. A method of making a semiconductor device, comprising:
providing a substrate;
forming a conductive via through a first side of the substrate;
forming a first interconnect structure over the first side of the substrate;
mounting a semiconductor die or a component to the first interconnect structure;
depositing an encapsulant over the first interconnect structure and semiconductor die or component; and
removing a portion of a second side of the substrate, opposite the first side of the substrate, to reduce its thickness and expose the conductive via.
15. The method of making a semiconductor device according to claim 14 , further including forming a second interconnect structure over the second side of the substrate, the second interconnect structure being electrically connected to the conductive via.
16. The method of making a semiconductor device according to claim 15 , further including mounting the semiconductor device to a printed circuit board through the second interconnect structure.
17. The method of making a semiconductor device according to claim 15 , wherein forming the second interconnect structure includes:
forming a first insulating layer over the second surface of the substrate; and
forming a first conductive layer over the conductive via.
18. The method of making a semiconductor device according to claim 15 , wherein forming the second interconnect structure includes:
forming a first insulating layer over the second surface of the substrate;
forming a first conductive layer over the conductive via to extend the conductivity of the conductive via;
forming a second insulating layer over the first insulating layer and first conductive layer; and
forming a second conductive layer over the first conductive layer.
19. The method of making a semiconductor device according to claim 14 , wherein forming the first interconnect structure includes:
forming a first conductive layer over the conductive via;
forming a first insulating layer over the first conductive layer and substrate;
forming a second conductive layer over the first insulating layer;
forming a second insulating layer over the second conductive layer and first insulating layer;
forming a conductive pillar over the second conductive layer;
forming a third insulating layer around the conductive pillar;
forming a third conductive layer over the conductive pillar; and
electrically connecting the semiconductor die or the component to the third conductive layer.
20. The method of making a semiconductor device according to claim 14 , wherein the encapsulant provides structural support while removing the portion of the second side of the substrate.
21. A method of making a semiconductor device, comprising:
providing a substrate;
forming a conductive via through a first side of the substrate;
forming a first interconnect structure over the first side of the substrate;
mounting a semiconductor die or a component to the first interconnect structure;
depositing an encapsulant over the first interconnect structure and semiconductor die or component; and
removing a portion of a second side of the substrate that is opposite the first side of the substrate to reduce an overall thickness of the second substrate and to expose the conductive via.
22. The method of making a semiconductor device according to claim 21 , further including forming a second interconnect structure that is electrically connected to the conductive via.
23. The method of making a semiconductor device according to claim 22 , further including mounting the semiconductor device to a printed circuit board.
24. The method of making a semiconductor device according to claim 22 , wherein forming the second interconnect structure includes:
forming a first insulating layer over the second surface of the substrate; and
forming a first conductive layer over the conductive via.
25. The method of making a semiconductor device according to claim 22 , wherein forming the second interconnect structure includes:
forming a first insulating layer over the second surface of the substrate;
forming a first conductive layer over the conductive via;
forming a second insulating layer over the first insulating layer and first conductive layer; and
forming a second conductive layer over the first conductive layer.
26. The method of making a semiconductor device according to claim 21 , wherein forming the first interconnect structure includes:
forming a first conductive layer over the conductive via;
forming a first insulating layer over the first conductive layer;
forming a second conductive layer over the first insulating layer; and
forming a second insulating layer over the second conductive layer and the first insulating layer.
27. The method of making a semiconductor device according to claim 26 , wherein forming the first interconnect structure further includes:
forming a conductive pillar over the second conductive layer;
forming a third insulating layer around the conductive pillar;
forming a third conductive layer over the conductive pillar; and
electrically connecting the semiconductor die or the component to the third conductive layer.