Semiconductor device and method of forming IPD on molded substrate
A semiconductor device is made by depositing an encapsulant material between first and second plates of a chase mold to form a molded substrate. A first conductive layer is formed over the molded substrate. A resistive layer is formed over the first conductive layer. A first insulating layer is formed over the resistive layer. A second insulating layer is formed over the first insulating layer, resistive layer, first conductive layer, and molded substrate. A second conductive layer is formed over the first insulating layer, resistive layer, and first conductive layer. A third insulating layer is formed over the second insulating layer and second conductive layer. A bump is formed over the second conductive layer. The first conductive layer, resistive layer, first insulating layer, and second conductive layer constitute a MIM capacitor. The second conductive layer is wound to exhibit inductive properties.
1. A method of making a semiconductor device, comprising:
forming a molded substrate;
forming a first conductive layer over the molded substrate;
removing a portion of the first conductive layer;
forming a resistive layer over the first conductive layer;
forming a first insulating layer over the resistive layer;
forming a second insulating layer over the first insulating layer, resistive layer, first conductive layer, and molded substrate;
removing a portion of the second insulating layer to expose the first insulating layer, resistive layer, and first conductive layer;
forming a second conductive layer over the first insulating layer, resistive layer, and first conductive layer;
forming a third insulating layer over the second insulating layer and second conductive layer;
removing a portion of the third insulating layer to expose the second conductive layer; and
forming a bump over the second conductive layer.
2. The method of claim 1 , further including depositing an encapsulant material between first and second plates of a chase mold to form the molded substrate.
3. The method of claim 2 , further including:
applying a first releasable layer over the first plate; and
applying a second releasable layer over the second plate.
4. The method of claim 3 , further including forming a conductive film layer over the first releasable layer to create the first conductive layer and a cavity in the molded substrate.
5. The method of claim 1 , further including forming a third conductive layer between the second conductive layer and bump.
6. The method of claim 1 , wherein the first conductive layer, resistive layer, first insulating layer, and second conductive layer constitute a metal-insulator-metal capacitor.
7. The method of claim 1 , wherein the second conductive layer is wound to exhibit inductive properties.
8. A method of making a semiconductor device, comprising:
forming a molded substrate;
forming a first conductive layer over the molded substrate;
forming a first insulating layer over the first conductive layer;
forming a second insulating layer over the first insulating layer, first conductive layer, and molded substrate;
forming a second conductive layer over the first insulating layer and first conductive layer;
forming a third insulating layer over the second insulating layer and second conductive layer; and
forming an interconnect over the second conductive layer.
9. The method of claim 8 , further including depositing an encapsulant material between first and second plates of a chase mold to form the molded substrate.
10. The method of claim 9 , further including:
applying a first releasable layer over the first plate; and
applying a second releasable layer over the second plate.
11. The method of claim 10 , further including forming a film layer over the first releasable layer to create a cavity in the molded substrate.
12. The method of claim 8 , wherein the interconnect includes a bump or bond wire.
13. The method of claim 8 , wherein the first conductive layer, first insulating layer, and second conductive layer constitute a metal-insulator-metal capacitor, and the second conductive layer is wound to exhibit inductive properties.
14. A method of making a semiconductor device, comprising:
forming a molded substrate, wherein forming the molded substrate includes depositing an encapsulant material between a first plate of a chase mold and a second plate of the chase mold;
forming an integrated passive device (IPD) over the molded substrate; and
forming an interconnect over the IPD.
15. The method of claim 14 , wherein forming the IPD includes:
forming a first conductive layer over the molded substrate;
forming a resistive layer over the first conductive layer;
forming a first insulating layer over the resistive layer;
forming a second insulating layer over the first insulating layer, resistive layer, first conductive layer, and molded substrate;
forming a second conductive layer over the second insulating layer, resistive layer, and first conductive layer; and
forming a third insulating layer over the second insulating layer and second conductive layer.
16. The method of claim 15 , wherein the first conductive layer, resistive layer, first insulating layer, and second conductive layer constitute a metal-insulator-metal capacitor, and the second conductive layer is wound to exhibit inductive properties.
17. A method of making a semiconductor device, comprising:
forming a molded substrate;
forming an integrated passive device (IPD) over the molded substrate;
forming an interconnect over the IPD;
depositing an encapsulant material between first and second plates of a chase mold to form the molded substrate;
applying a first releasable layer over the first plate; and
applying a second releasable layer over the second plate.
18. The method of claim 17 further including forming a film layer over the first releasable layer to create a cavity in the molded substrate.
19. A semiconductor device, comprising:
a molded substrate;
a first conductive layer formed over the molded substrate;
a first insulating layer formed over the first conductive layer;
a second insulating layer formed over the first insulating layer, first conductive layer, and molded substrate;
a second conductive layer formed over the second insulating layer and first conductive layer;
a third insulating layer formed over the second insulating layer and second conductive layer; and
an interconnect formed over the second conductive layer.
20. The semiconductor device of claim 19 , wherein the molded substrate includes a cavity formed in a surface of the molded substrate.
21. The semiconductor device of claim 19 , wherein the interconnect includes a bump or bond wire.
22. The semiconductor device of claim 19 , wherein the first conductive layer, first insulating layer, and second conductive layer constitute a metal-insulator-metal capacitor.
23. The semiconductor device of claim 19 , wherein a portion of the second conductive layer includes an inductor.
24. The semiconductor device of claim 19 , wherein a portion of the second conductive layer includes an integrated passive device.
25. A method of making a semiconductor device, comprising:
applying a first releasable layer over a first plate of a chase mold;
applying a second releasable layer over a second plate of the chase mold;
depositing an encapsulant material between the first plate of the chase mold and the second plate of the chase mold to form a molded substrate;
forming an integrated passive device (IPD) over the molded substrate; and
forming an interconnect over the IPD.
26. The method of claim 25 , further comprising forming a film layer over the first releasable layer.
27. The method of claim 25 , wherein forming the IPD over the molded substrate comprises:
forming a first conductive layer over the molded substrate;
forming a resistive layer over the first conductive layer;
forming a first insulating layer over the resistive layer;
forming a second insulating layer over the first insulating layer, resistive layer, first conductive layer, and molded substrate;
forming a second conductive layer over the second insulating layer, resistive layer, and first conductive layer; and
forming a third insulating layer over the second insulating layer and second conductive layer.
28. The method of claim 27 , wherein the first conductive layer, resistive layer, first insulating layer, and second conductive layer constitute a metal-insulator-metal capacitor, and the second conductive layer is wound to exhibit inductive properties.