Transistor fabrication method
View Patent ↗A method of forming low stack height transistors having controllable linewidth in an integrated circuit without channeling is disclosed. A disposable hardmask of doped glass is utilized to define the gate and subsequently protect the gate (and the underlying substrate) during ion implantation which forms the source and drains. A variety of silicided and non-silicided) structures may be formed.
1. A method of semiconductor integrated circuit fabrication, comprising:
forming a dielectric layer upon a substrate;
forming a conductive layer upon said dielectric layer;
forming a material layer overlying said conductive layer;
forming a patterned resist upon said material layer;
conducting an etching step that etches only a part of said material layer thereby leaving a portion of said material layer and forming an unetched raised feature at a conclusion of said etching step, wherein said conductive layer is not etched during said etching step;
removing said resist;
using said raised feature as an etch mask, anisotropically etching through said conductive layer and said dielectric layer to said substrate, thereby forming a gate;
forming source and drain regions; and
removing said etch mask.
2. The method of claim 1 , in which said material layer is formed from the group consisting of: doped silicon oxides formed from a precursor, spin-on-glass, silicon oxynitride and silicon nitride.
3. The method of claim 2 , said precursor is choosen from the group consisting of: TEOS, DADS and silane.
4. The method of claim 1 , in which said material layer is formed from the group consisting of: BPSG and PSG.
5. A method of semiconductor integrated circuit fabrication, comprising:
forming a dielectric layer upon a substrate;
forming a conductive layer upon said dielectric layer;
forming a material layer overlying said conductive layer wherein said material layer is a silicon oxide layer whose doping gradually increase from bottom to top;
forming a patterned resist upon said material layer;
conducting an etching step etching part of said material layer to thereby form an unetched raised feature, said raised feature being thicker than remaining portions of said material layer in said etched part, wherein said conductive layer is not altered by said etching;
removing said resist;
using said raised feature as an etch mask, anisotropically etching said conductive layer and said dielectric layer, thereby forming a gate;
forming source and drain regions; and
removing said etch mask.
6. The method of claim 1 , in which said material layer is a bilayer having an underlying layer of silicon oxide beneath a layer of silicon nitride.
7. The method of claim 1 , further including the steps of:
blanket depositing a refractory metal upon said gate and said source and drain region; and
heating said refractory metal to form a silicide upon said gate and said source and drain region.
8. The method of claim 1 , further including the step of:
forming spacers adjacent said gate prior to formation of said source and drain regions.
9. The method of claim 7 , further including the step of:
forming spacers adjacent said gate prior to deposition of said refractory metal.
10. The method of claim 1 , further including the steps of:
prior to removal of said material layer, blanket depositing a refractory metal upon said material layer and upon said source and drain; and
heating said refractory metal to form a silicide upon said source and drain and not upon said gate.
11. The method of claim 1 , further including the steps of:
forming a protective layer over said source and drain;
exposing said conductive layer of said gate by removing said material layer;
depositing a refractory metal upon said conductive layer and upon said protective layer; and
heating said refractory metal to form silicide upon said gate and not upon said source and drain.
12. The method of claim 1 , further including the steps of:
forming a silicide layer between said conductive layer and said material layer prior to said step of forming a patterned resist.
13. The method of claim 1 , further including the steps, prior to removal of said material layer, of:
blanket depositing a refractory metal upon said gate and source and drain region; and
reacting said refractory metal to form a silicide upon said source and drain region and not upon said gate.
14. The method of claim 1 , wherein forming said material layer includes forming said material layer to be coextensive with said conductive layer.