Semiconductor device and method of forming interposer with opening to contain semiconductor die
A semiconductor device has an interposer mounted over a carrier. The interposer includes TSV formed either prior to or after mounting to the carrier. An opening is formed in the interposer. The interposer can have two-level stepped portions with a first vertical conduction path through a first stepped portion and second vertical conduction path through a second stepped portion. A first and second semiconductor die are mounted over the interposer. The second die is disposed within the opening of the interposer. A discrete semiconductor component can be mounted over the interposer. A conductive via can be formed through the second die or encapsulant. An encapsulant is deposited over the first and second die and interposer. A portion of the interposer can be removed to that the encapsulant forms around a side of the semiconductor device. An interconnect structure is formed over the interposer and second die.
1. A method of making a semiconductor device, comprising:
providing a first interposer including an opening and a vertical conduction path through the first interposer;
disposing a first semiconductor die over a first surface of the first interposer, an active surface of the first semiconductor die oriented toward the first interposer;
disposing a second semiconductor die within the opening of the first interposer, a non-active surface of the second semiconductor die oriented toward the first semiconductor die;
depositing an encapsulant over the first semiconductor die and around the second semiconductor die within the opening of the first interposer; and
forming an interconnect structure over the first interposer, the encapsulant, and the second semiconductor die by,
(a) forming an insulating layer on a surface of the encapsulant, on an active surface of the second semiconductor die opposite the non-active surface, and on a second surface of the first interposer opposite the first surface, and
(b) forming a conductive layer on the active surface of the second semiconductor die and on the second surface of the first interposer.
2. The method of claim 1 , further including forming a conductive via through the first semiconductor die.
3. The method of claim 1 , further including forming a conductive via through the second semiconductor die.
4. The method of claim 1 , further including forming a conductive via or conductive pillar through the encapsulant around the first semiconductor die.
5. The method of claim 1 , further including removing a portion of the first interposer to form the second surface of the first interposer.
6. The method of claim 1 , further including forming a heat sink over the first semiconductor die.
7. The method of claim 1 , further including disposing a second interposer over the first interposer, the second interposer including a vertical conduction path through the second interposer.
8. The method of claim 1 , further including depositing a bump material over the interconnect structure.
9. The method of claim 1 , further including disposing a bump between the first semiconductor die and the first interposer.
10. The method of claim 1 , further including:
disposing a first bump over the interconnect structure; and
disposing a second bump, smaller than the first bump, between the first semiconductor die and the first interposer.
11. The method of claim 1 , further including disposing a third semiconductor die over the first semiconductor die.