Semiconductor device and method of forming package-on-package structure electrically interconnected through TSV in WLCSP
A semiconductor wafer has a plurality of semiconductor die. First and second conductive layers are formed over opposing surfaces of the semiconductor die, respectively. Each semiconductor die constitutes a WLCSP. A TSV is formed through the WLCSP. A semiconductor component is mounted to the WLCSP. The first semiconductor component is electrically connected to the first conductive layer. A first bump is formed over the first conductive layer, and a second bump is formed over the second conductive layer. An encapsulant is deposited over the first bump and first semiconductor component. A second semiconductor component is mounted to the first bump. The second semiconductor component is electrically connected to the first semiconductor component and WLCSP through the first bump and TSV. A third semiconductor component is mounted to the first semiconductor component, and a fourth semiconductor component is mounted to the third semiconductor component.
1. A method of making a semiconductor device, comprising:
providing a semiconductor wafer including a plurality of semiconductor die;
forming a first conductive layer over an active surface of the semiconductor die including active devices;
forming a second conductive layer over a second surface of the semiconductor die opposite the active surface of the semiconductor die such that each semiconductor die constitutes a wafer level chip scale package (WLCSP);
forming a conductive through silicon via (TSV) through the active surface of the WLCSP;
mounting a first semiconductor component to the WLCSP;
electrically connecting the first semiconductor component to the first conductive layer;
forming a first bump over the first conductive layer;
mounting a second semiconductor component to the first bump and electrically connecting the second semiconductor component to the first semiconductor component and WLCSP through the first bump and TSV; and
singulating the semiconductor wafer after mounting the second semiconductor component.
2. The method of claim 1 , further including depositing an encapsulant over the first bump and first semiconductor component.
3. The method of claim 2 , further including removing a portion of the encapsulant to expose the first bump.
4. The method of claim 1 , wherein the first semiconductor component is electrically connected to the first conductive layer by bond wire or bump.
5. The method of claim 1 , further including forming a second bump over the second conductive layer.
6. The method of claim 1 , further including mounting a third semiconductor component to the first semiconductor component.
7. The method of claim 6 , further including mounting a fourth semiconductor component to the third semiconductor component.
8. A method of making a semiconductor device, comprising:
providing a semiconductor wafer including a plurality of semiconductor die;
forming a first conductive layer over an active surface of the semiconductor die, each semiconductor die constituting a wafer level chip scale package (WLCSP);
forming a conductive through silicon via (TSV) through the WLCSP;
mounting a first semiconductor component to the WLCSP;
forming a first interconnect structure over the first conductive layer;
mounting a second semiconductor component to the first interconnect structure and electrically connecting the second semiconductor component to the first semiconductor component and WLCSP through the first interconnect structure and TSV; and
singulating the semiconductor wafer after mounting the second semiconductor component.
9. The method of claim 8 , further including depositing an encapsulant over the first interconnect structure and first semiconductor component.
10. The method of claim 9 , further including removing a portion of the encapsulant to expose the first interconnect structure.
11. The method of claim 8 , wherein the first interconnect structure includes a bump or pillar.
12. The method of claim 8 , further including electrically connecting the first semiconductor component to the first conductive layer by bond wire or bump.
13. The method of claim 8 , further including:
forming a second conductive layer over a second surface of the semiconductor die opposite the active surface of the semiconductor die; and
forming a second interconnect structure over the second conductive layer.
14. The method of claim 8 , further including:
mounting a third semiconductor component to the first semiconductor component; and
mounting a fourth semiconductor component to the third semiconductor component.
15. The method of claim 1 , further including depositing an encapsulant over the first semiconductor component.
16. The method of claim 8 , further including depositing an encapsulant over the first semiconductor component.
17. The method of claim 8 , further including mounting a third semiconductor component to the first semiconductor component.