Semiconductor device and method of forming an inductor on polymer matrix composite substrate
A semiconductor device has a first insulating layer formed over a first surface of a polymer matrix composite substrate. A first conductive layer is formed over the first insulating layer. A second insulating layer is formed over the first insulating layer and first conductive layer. A second conductive layer is formed over the second insulating layer and first conductive layer. The second conductive layer is wound to exhibit inductive properties. A third conductive layer is formed between the first conductive layer and second conductive layer. A third insulating layer is formed over the second insulating layer and second conductive layer. A bump is formed over the second conductive layer. A fourth insulating layer can be formed over a second surface of the polymer matrix composite substrate. Alternatively, the fourth insulating layer can be formed over the first insulating layer prior to forming the first conductive layer.
1. A method of making a semiconductor device, comprising:
forming a polymer matrix composite substrate;
forming a first insulating layer directly on a first surface of the polymer matrix composite substrate;
forming a first conductive layer directly on the first insulating layer;
forming a second insulating layer over the first insulating layer and first conductive layer;
forming a second conductive layer over the second insulating layer and extending to the first conductive layer;
forming a third insulating layer over the second insulating layer and second conductive layer;
removing a portion of the third insulating layer to expose the second conductive layer; and
forming a bump over the second conductive layer.
2. The method of claim 1 , wherein forming the polymer matrix composite substrate includes:
providing a chase mold having first and second plates;
applying a first releasable layer over the first plate;
forming a metal carrier over the second plate;
applying a second releasable layer over the metal carrier; and
depositing an encapsulant material between the first and second plates of the chase mold.
3. The method of claim 1 , further including forming a third conductive layer between the first conductive layer and second conductive layer.
4. The method of claim 1 , further including forming a fourth insulating layer over a second surface of the polymer matrix composite substrate, opposite the first surface of the polymer matrix composite substrate.
5. The method of claim 1 , further including forming a fourth insulating layer over the first insulating layer prior to forming the first conductive layer.
6. The method of claim 1 , wherein the second conductive layer is wound to exhibit inductive properties.
7. A method of making a semiconductor device, comprising:
forming a molded substrate by,
(a) providing a chase mold including first and second plates, and
(b) depositing an encapsulant material between the first and second plates;
forming a first conductive layer on the molded substrate;
forming a first insulating layer over the molded substrate and first conductive layer;
forming an integrated passive device including a second conductive layer over the first insulating layer and extending to the first conductive layer;
forming a second insulating layer over the first insulating layer and second conductive layer; and
forming an interconnect structure over the second conductive layer.
8. The method of claim 7 , wherein forming the molded substrate includes:
applying a first releasable layer over the first plate; and
applying a second releasable layer over the second plate.
9. The method of claim 7 , further including forming a third conductive layer between the first conductive layer and second conductive layer.
10. The method of claim 7 , further including:
forming a third insulating layer over a first surface of the molded substrate prior to forming the first conductive layer; and
forming a fourth insulating layer over a second surface of the molded substrate, opposite the first surface of the molded substrate.
11. The method of claim 7 , further including:
forming a third insulating layer over a first surface of the molded substrate prior to forming the first conductive layer; and
forming a fourth insulating layer over the third insulating layer.
12. The method of claim 7 , wherein the second conductive layer is wound to exhibit inductive properties.
13. The method of claim 7 , wherein the interconnect structure includes a bump or bond wire.
14. A method of making a semiconductor device, comprising:
forming a polymer matrix composite substrate by,
(a) providing a chase mold having first and second plates,
(b) applying a first releasable layer over the first plate,
(c) applying a second releasable layer over the second plate, and
(d) depositing an encapsulant material between the first and second plates of the chase mold;
forming an inductor over the polymer matrix composite substrate; and
forming an interconnect structure over the inductor.
15. The method of claim 14 , further including:
forming a first conductive layer over the polymer matrix composite substrate;
forming a first insulating layer over the polymer matrix composite substrate and first conductive layer;
forming a second conductive layer over the first insulating layer and first conductive layer;
forming a second insulating layer over the first insulating layer and second conductive layer; and
forming the interconnect structure over the second conductive layer.
16. The method of claim 15 , further including forming a third conductive layer between the first conductive layer and second conductive layer.
17. The method of claim 15 , further including:
forming a third insulating layer over a first surface of the polymer matrix composite substrate prior to forming the first conductive layer; and
forming a fourth insulating layer over a second surface of the polymer matrix composite substrate, opposite the first surface of the polymer matrix composite substrate.
18. The method of claim 15 , further including:
forming a third insulating layer over a first surface of the polymer matrix composite substrate prior to forming the first conductive layer; and
forming a fourth insulating layer over the third insulating layer.
19. A method of making a semiconductor device, comprising:
forming a polymer matrix composite substrate in a chase mold;
forming an inductor over the polymer matrix composite substrate; and
forming an interconnect structure over the inductor.
20. The method of claim 19 , further including:
forming a first conductive layer over the polymer matrix composite substrate;
forming a first insulating layer over the polymer matrix composite substrate and first conductive layer;
forming the inductor over the first insulating layer and first conductive layer;
forming a second insulating layer over the first insulating layer and inductor; and
forming the interconnect structure over the inductor.
21. The method of claim 20 , further including forming a third conductive layer between the first conductive layer and inductor.
22. The method of claim 20 , further including:
forming a third insulating layer over a first surface of the polymer matrix composite substrate prior to forming the first conductive layer; and
forming a fourth insulating layer over a second surface of the polymer matrix composite substrate, opposite the first surface of the polymer matrix composite substrate.
23. The method of claim 20 , further including:
forming a third insulating layer over a first surface of the polymer matrix composite substrate prior to forming the first conductive layer; and
forming a fourth insulating layer over the third insulating layer.
24. The method of claim 19 , wherein forming the polymer matrix composite substrate includes:
providing the chase mold having first and second plates;
applying a first releasable layer over the first plate;
forming a metal carrier over the second plate;
applying a second releasable layer over the metal carrier; and
depositing an encapsulant material between the first and second plates.