Fusible I/O interconnection systems and methods for flip-chip packaging involving substrate-mounted stud bumps
View Patent ↗A semiconductor device has a semiconductor die with bond pads formed on a surface of the semiconductor die. A UBM is formed over the bond pads of the semiconductor die. A fusible layer is formed over the UBM. The fusible layer can be tin or tin alloy. A substrate has bond pads formed on a surface of the substrate. A plurality of stud bumps containing non-fusible material is formed over the bond pads on the substrate. Each stud bump includes a wire having a first end attached to the bond pad of the substrate and second end of uniform height electrically connected to the bond pad of the semiconductor die by reflowing the fusible layer or applying thermal compression bonding. An underfill material is deposited between the semiconductor die and substrate. An encapsulant is deposited over the semiconductor die and substrate.
1. A semiconductor device, comprising:
a semiconductor die having a plurality of bond pads formed on a surface of the semiconductor die;
an under bump metallization (UBM) formed over the bond pads of the semiconductor die;
a fusible layer formed over the UBM, the fusible layer having a maximum width less than or equal to a width of the bond pads formed on the surface of the semiconductor die and a thickness in a range of 0.5-10.0 micrometers;
a substrate having a plurality of traces formed on a surface of the substrate; and
a plurality of stud bumps containing non-fusible material formed over the traces, each stud bump including a wire having a ball bond formed over first and second side surfaces of the traces and a tip of uniform height electrically connected to the bond pad of the semiconductor die by reflowing the fusible layer or applying thermal compression bonding such that an intermediate portion of the stud bumps between the tip and the ball bond is exposed with respect to the fusible layer.
2. The semiconductor device of claim 1 , wherein the fusible layer includes tin or tin alloy.
3. The semiconductor device of claim 1 , wherein the UBM includes:
an adhesion layer formed over the bond pads on the semiconductor die;
a barrier layer formed over the adhesion layer; and
a wettable layer formed over the barrier layer.
4. The semiconductor device of claim 1 , further including:
an underfill material deposited between the semiconductor die and substrate; and
an encapsulant deposited over the semiconductor die and substrate.
5. A semiconductor device, comprising:
a semiconductor die having a plurality of bond pads formed on a surface of the semiconductor die;
a fusible layer formed over the bond pads formed on the surface of the semiconductor die with a maximum width less than or equal to a width of the bond pads;
a substrate including a plurality of traces formed on a surface of the substrate; and
a plurality of electrical interconnects containing non-fusible material formed over the traces on the substrate, the electrical interconnects each including a wire having a ball bond formed over first and second side surfaces of the traces and a tip of uniform height electrically connected to the bond pad of the semiconductor die such that an intermediate portion of the electrical interconnects is free from the fusible layer.
6. The semiconductor device of claim 5 , wherein the tip of the wire is cut and flattened by mechanical pressure to the uniform height.
7. The semiconductor device of claim 5 , wherein the tip of the wire is electrically connected to the bond pad of the semiconductor die by reflowing the fusible layer or applying thermal compression bonding.
8. The semiconductor device of claim 5 , wherein the fusible layer includes tin or tin alloy.
9. The semiconductor device of claim 5 , further including an under bump metallization (UBM) formed between the fusible layer and bond pads of the semiconductor die.
10. The semiconductor device of claim 9 , wherein the UBM includes:
an adhesion layer formed over the bond pads on the semiconductor die;
a barrier layer formed over the adhesion layer; and
a wettable layer formed over the barrier layer.
11. The semiconductor device of claim 5 , further including an underfill material deposited between the semiconductor die and substrate.
12. The semiconductor device of claim 5 , further including an encapsulant deposited over the semiconductor die and substrate.
13. A semiconductor device, comprising:
a semiconductor die having a plurality of bond pads formed on a surface of the semiconductor die;
an under bump metallization (UBM) formed over the bond pads;
a fusible layer formed over the UBM;
a substrate having a plurality of traces formed on a surface of the substrate; and
a plurality of stud bumps containing non-fusible material formed over the traces, the stud bumps each including a wire having a ball bond formed over first and second side surfaces of the traces and a tip electrically connected to the bond pads such that an intermediate portion of the stud bumps is exposed with respect to the fusible layer.
14. The semiconductor device of claim 13 , wherein the stud bumps each include a tip of uniform height electrically connected to the plurality of bond pads.
15. The semiconductor device of claim 13 , wherein the stud bumps are electrically connected to the bond pads by reflowing the fusible layer or applying thermal compression bonding.
16. The semiconductor device of claim 13 , wherein the fusible layer includes tin or tin alloy.
17. The semiconductor device of claim 13 , wherein the UBM includes:
an adhesion layer formed over the bond pads;
a barrier layer formed over the adhesion layer; and
a wettable layer formed over the barrier layer.
18. The semiconductor device of claim 13 , further including an underfill material deposited between the semiconductor die and substrate.
19. The semiconductor device of claim 13 , further including an encapsulant deposited over the semiconductor die and substrate.
20. A semiconductor device, comprising:
a semiconductor die having a plurality of bond pads formed on a surface of the semiconductor die;
a fusible layer formed over the surface of the semiconductor die;
a substrate having a plurality of bond pads formed on a surface of the substrate; and
a plurality of electrical interconnects containing non-fusible material formed over the bond pads on the substrate, the electrical interconnects including a wire having a ball bond attached to the bond pad of the substrate and a tip of uniform height electrically connected to the bond pad of the semiconductor die such that an intermediate portion of the electrical interconnects is exposed with respect to the fusible layer.
21. The semiconductor device of claim 20 , wherein the fusible layer includes tin or tin alloy.
22. The semiconductor device of claim 20 , further including an under bump metallization (UBM) formed between the fusible layer and bond pads of the semiconductor die.
23. The semiconductor device of claim 22 , wherein the UBM includes:
an adhesion layer formed over the bond pads on the semiconductor die;
a barrier layer formed over the adhesion layer; and
a wettable layer formed over the barrier layer.
24. The semiconductor device of claim 20 , further including:
an underfill material deposited between the semiconductor die and substrate; and
an encapsulant deposited over the semiconductor die and substrate.
25. The semiconductor device of claim 1 , wherein the tip of the wire is electrically connected to the bond pad of the semiconductor die by reflowing the fusible layer or applying thermal compression bonding.