Semiconductor method of forming bump on substrate to prevent ELK ILD delamination during reflow process
A method of making a semiconductor device that has a flipchip semiconductor die and substrate. A first insulating layer is formed over the substrate. A via is formed through the first insulating layer. Conductive material is deposited in the via to form a conductive pillar or stacked stud bumps. The conductive pillar is electrically connected to a conductive layer within the substrate. A second insulating layer is formed over the first insulating layer. Bump material is formed over the conductive pillar. The bump material is reflowed to form a bump. The first and second insulating layers are removed. The semiconductor die is mounted to the substrate by reflowing the bump to a conductive layer of the die. The semiconductor die also has a third insulating layer formed over the conductive layer and an active surface of the die and UBM formed over the first conductive layer and third insulating layer.
1. A method of making a semiconductor device, comprising:
providing a substrate;
forming a first insulating layer over the substrate;
forming a via through the first insulating layer to the substrate;
depositing conductive material in the via to form a conductive pillar;
forming a second insulating layer over the first insulating layer;
forming bump material over the conductive pillar;
reflowing the bump material to form a bump;
removing the first and second insulating layers;
providing a semiconductor die including a first conductive layer; and
disposing the semiconductor die on the substrate and connecting the bump to the first conductive layer.
2. The method of claim 1 , further including:
forming a second conductive layer in the substrate; and
electrically connecting the conductive pillar to the second conductive layer.
3. The method of claim 1 , further including:
forming the second insulating layer over the first insulating layer and conductive pillar; and
removing a portion of the second insulating layer over the conductive pillar.
4. The method of claim 1 , wherein providing the semiconductor die further includes:
forming a third insulating layer over the first conductive layer and an active surface of the semiconductor die; and
forming an under bump metallization over the first conductive layer and third insulating layer.
5. The method of claim 1 , wherein the semiconductor die is a flipchip type semiconductor die.
6. The method of claim 1 , further including disposing the semiconductor die over the substrate by reflowing the bump to the first conductive layer.
7. A method of making a semiconductor device, comprising:
providing a substrate;
forming a first insulating layer over the substrate;
forming a via through the first insulating layer to the substrate;
forming an interconnect structure in the via;
forming a bump over the interconnect structure;
providing a semiconductor die including a first conductive layer; and
disposing the semiconductor die over the substrate and connecting the bump to the first conductive layer.
8. The method of claim 7 , further including:
forming a second insulating layer over the first insulating layer;
forming bump material over the interconnect structure; and
reflowing the bump material to form the bump.
9. The method of claim 8 , further including removing the first and second insulating layers after forming the bump over the interconnect structure.
10. The method of claim 7 , wherein the interconnect structure includes a conductive pillar or stacked stud bumps.
11. The method of claim 7 , further including:
forming a second conductive layer in the substrate; and
electrically connecting the interconnect structure to the second conductive layer.
12. The method of claim 7 , wherein providing the semiconductor die further includes:
forming a second insulating layer over the first conductive layer and a surface of the semiconductor die; and
forming an under bump metallization over the first conductive layer and second insulating layer.
13. The method of claim 7 , wherein the semiconductor die is a flipchip type semiconductor die.
14. A method of making a semiconductor device, comprising:
providing a substrate;
forming an interconnect structure over the substrate;
disposing a bump material over the interconnect structure;
reflowing the bump material to form a bump over the interconnect structure;
providing a semiconductor die including a first conductive layer; and
disposing the semiconductor die over the substrate and connecting the bump to the first conductive layer.
15. The method of claim 14 , further including:
forming a first insulating layer over the substrate;
forming a via through the first insulating layer to the substrate; and
forming the interconnect structure in the via.
16. The method of claim 15 , further including:
forming a second insulating layer over the first insulating layer;
removing a portion of the second insulating layer over the interconnect structure; and
forming the bump material over the interconnect structure.
17. The method of claim 16 , further including removing the first and second insulating layers after forming the bump over the interconnect structure.
18. The method of claim 14 , wherein the interconnect structure includes a conductive pillar or stacked stud bumps.
19. A method of making a semiconductor device, comprising
providing a substrate;
forming an interconnect structure over the substrate;
forming a bump over the interconnect structure;
providing a semiconductor die including a first conductive layer;
forming a first insulating layer over the first conductive layer and a surface of the semiconductor die;
forming an under bump metallization over the first conductive layer and first insulating layer; and
disposing the semiconductor die over the substrate and connecting the bump to the first conductive layer.
20. The method of claim 14 , wherein the semiconductor die is a flipchip type semiconductor die.
21. The method of claim 19 , further including:
forming a second insulating layer over the substrate;
forming a via through the second insulating layer to the substrate; and
forming the interconnect structure in the via.
22. The method of claim 21 , further including:
forming a third insulating layer over the second insulating layer;
forming bump material over the interconnect structure; and
reflowing the bump material to form the bump.
23. The method of claim 22 , further including removing the second and third insulating layers after forming the bump over the interconnect structure.
24. The method of claim 19 , wherein the interconnect structure includes a conductive pillar or stacked stud bumps.
25. The method of claim 19 , wherein the semiconductor die is a flipchip type semiconductor die.