Configurable module and memory subsystem
View Patent ↗A configurable memory subsystem includes a memory module with a circuit board having a first and a second memory-containing device (MCD) pair mounted thereto. Each MCD pair has a first MCD in communication with a second MCD. Each MCD has an input port, an output port, and a memory each communicating with a bridge. In response to a command, the bridge transfers at least one of a portion of a data packet from the input port to the output port or to the memory, or transfers a portion of a memory packet from the memory to the output port. A loop-back device receives the command and the data packet form the first MCD pair and transmits the command and data packet to the second MCD pair.
1. A memory module comprising:
a plurality of memory-containing devices (MCDs) each having an input port, an output port, a memory, and a bridge in communication with the input port, the output port, and the memory, the bridge adapted to receive a command and a data packet from the input port and adapted to execute in response to the command at least one of a transfer of a portion of the data packet from the input port to the memory, a transfer of a portion of the data packet from the input port to the output port, and a transfer of a portion of a memory packet from the memory to the output port; and
a circuit board having the MCDs mounted thereto and having a plurality of conducting paths for serial communication between at least two of the MCDs.
2. The memory module of claim 1 wherein the MCDs comprises a pair of MCDs that includes a first MCD mounted to a side of the circuit board and having an input port in communication with a plurality of input conductors on an edge of the circuit board and a second MCD mounted to an opposite side of the circuit board and proximate to the first MCD, the output port of the first MCD in communication with the input port of the second MCD, the output port of the first MCD and the input port of the second MCD aligned to each other to reduce a communication path therebetween, and the output port of the second MCD in communication with a plurality of output conductors on the edge of the circuit board.
3. The memory module of claim 1 wherein the MCDs comprises a first MCD pair and a second MCD pair each having a first MCD and a second MCD, the first MCD having an input port in communication with a plurality of input conductors on an edge of the circuit board and an output port in communication with the input port of the second MCD, the second MCD having an output port in communication with a plurality of output conductors on the edge of the circuit board, and the first MCD of the first MCD pair being adjacently disposed to and mounted on a same side of the circuit board as the second MCD of the second MCD pair.
4. The memory module of claim 1 wherein the MCDs includes an output port of a first MCD in communication with an input port of a second MCD wherein a bus order of the output port of the first MCD is reversed from a bus order of the input port of the second MCD.
5. The memory module of claim 1 wherein the MCDs on a same side of the circuit board are collinear to each other.
6. The memory module of claim 1 wherein at least one of the MCDs includes at least one non-volatile memory.
7. The memory system of claim 1 wherein at least one of the MCDs includes at least one volatile memory.
8. The memory system of claim 1 wherein the circuit board includes an edge connector adapted for attaching the circuit board to another circuit board and providing a communication path therebetween.
9. The memory module of claim 1 wherein the MCDs include a first MCD pair and a second MCD pair each having a first MCD and a second MCD, a pair input being in communication with an input port of the first MCD, an output port of the first MCD being in communication with an input port of the second MCD, and an output port of the second MCD being in communication with a pair output,
the pair input of the first MCD pair being in communication with a plurality of input conductors on an edge of the circuit board, the pair output of the first MCD pair being in communication with the pair input of the second MCD pair and the pair output of the second MCD pair being in communication with a plurality of output conductors on the edge of the circuit board.
10. The memory module of claim 1 wherein the circuit board is divided into an upper half and a lower half, each of the halves including a plurality of MCD pairs mounted thereto, each of the MCD pairs comprising an input port of a first MCD adapted to receive a packet, an output port of the first MCD in communication with an input port of a second MCD and an output port of the second MCD adapted to transmit the packet,
the upper half having an outer MCD pair and an inner MCD pair each being disposed adjacently to a same unpopulated MCD pair mounting location, and
the lower half having an outer MCD pair disposed adjacently to an inner MCD pair, the inner MCD pair disposed adjacently to an unpopulated MCD pair mounting location adjacent to the upper half.
11. A configurable memory subsystem comprising:
a memory module comprising a circuit board having a first MCD pair and a second MCD pair mounted thereto, each having a first MCD and a second MCD, each MCD having an input port, an output port, a memory, and a bridge in communication with the input port, the output port, and the memory, the bridge adapted to receive a command and a data packet from the input port, and adapted to execute in response to the command at least one of a transfer of a portion of the data packet from the input port to the memory, a transfer of a portion of the data packet from the input port to the output port, and a transfer of a portion of a memory packet from the memory to the output port,
each of the MCD pairs having a pair input in communication with the input port of the first MCD and in communication with a plurality of input conductors on an edge of the circuit board, the output port of the first MCD in communication with the input port of the second MCD, and the output port of the second MCD in communication with a pair output and in communication with a plurality of output conductors on the edge of the circuit board; and
a loop-back device in communication with the memory module, the loop-back device receiving the command and the data packet from the pair output of the first MCD pair and transmitting the command and the data packet to the pair input of the second MCD pair.
12. The configurable memory subsystem of claim 11 wherein the loop-back device includes a plurality of loop-back paths on a loop-back circuit board, the loop-back paths being in communication with a plurality of conductors on the edge of the loop-back circuit board, and providing communication between the pair output of the first MCD pair of the memory module and the pair input of the second MCD pair of the memory module.
13. The configurable memory subsystem of claim 11 wherein the loop-back device includes a plurality of loop-back paths providing communication between the pair output of the first MCD pair of the memory module and the pair input of the second MCD pair of the memory module.
14. The configurable memory subsystem of claim 11 wherein the loop-back device includes a first MCD pair and a second MCD pair, each of the MCD pairs of the loop-back device including a pair input being in communication with an input port of the first MCD, an output port of the first MCD being in communication with an input port of the second MCD, an output port of the second MCD being in communication with a pair output,
the pair input of the first MCD pair of the loop-back device being in communication with a plurality of input conductors on an edge of a circuit board, the pair output of the first MCD pair of the loop-back device being in communication with the pair input of the second MCD pair of the loop-back device, and the pair output of the second MCD pair of the loop-back device being in communication with a plurality of output conductors on the edge of the circuit board,
the pair output of the first MCD pair of the memory module being in communication with the pair input of the first MCD pair of the loop-back device, and the pair output of the second MCD pair of the loop-back device being in communication with the pair input of the second MCD pair of the memory module.
15. The configurable memory subsystem of claim 11 wherein the memory module is a second memory module and the memory system further comprises a first memory module disposed adjacent to the second memory module,
the pair output of the first MCD pair of the first memory module being in communication with the pair input of the first MCD pair of the second memory module, and the pair output of the second MCD pair of the second memory module being in communication with the pair input of the second MCD pair of the first memory module.
16. The configurable memory subsystem of claim 11 further comprising a second memory module disposed between the memory module and the loop-back device, and a second loop-back device disposed adjacent to the loop-back device, and the second memory module being in communication with the second loop-back device.
17. The configurable memory subsystem of claim 11 further comprising a third MCD pair and a fourth MCD pair, the pair output of the second MCD pair being in communication with the pair input of the third MCD pair, the loop-back device receiving the command and the data packet from the pair output of the third MCD pair and transmitting the command and the data packet to the pair input of the fourth MCD pair.
18. A configurable memory subsystem comprising:
a forward memory module; and
a reversed memory module,
each of the forward and reversed memory modules comprising a circuit board having an upper half and a lower half, each of the upper and lower halves including a plurality of MCD pairs mounted thereto, each of the MCD pairs having a pair input for receiving packets and a pair output for transmitting packets, the upper half having an outer MCD pair and an inner MCD pair each disposed adjacent to an unpopulated MCD pair mounting location, the lower half having an outer MCD pair and an inner MCD pair, the outer MCD pair disposed adjacent to the inner MCD pair, the inner MCD pair disposed adjacent to an unpopulated MCD pair mounting location adjacent to the upper half,
the reversed memory module disposed adjacent to the forward memory module, wherein a linear order of MCD pairs on the reversed memory module is opposite to a linear order of the forward memory module, the at least one of the MCD pairs on the upper half of the forward memory module being in serial communication with at least one of the MCD pairs on the lower half of the reversed memory module, and at least one of the MCD pairs on the lower half of the forward memory module being in serial communication with at least one of the MCD pairs on the upper half of the reversed memory module.
19. The configurable memory subsystem of claim 18 wherein the pair output of the outer MCD pair on the upper half of the forward memory module is in communication with the pair input of the outer MCD pair on the lower half of the reversed memory module,
the pair output of the outer MCD pair on the lower half of the reversed memory module being in communication with the pair input of the inner MCD pair on the lower half of the reversed memory module,
the pair output of the inner MCD pair on the lower half of the reversed memory module being in communication with the pair input of the inner MCD pair on the upper half of the forward memory module,
the pair output of the inner MCD pair on the lower half of the forward memory module being in communication with the pair input of the inner MCD pair on the upper half of the reversed memory module,
the pair output of the inner pair on the upper half of the reversed memory module being in communication with the pair input of the outer MCD pair on the upper half of the reversed memory module, and
the pair output of the outer MCD pair on the upper half of the reversed memory module being in communication with the pair input of the outer MCD pair on the lower half of the forward memory module.
20. The configurable memory subsystem of claim 18 wherein each of the MCD pairs includes a first MCD and a second MCD each having an input port, an output port, a memory, and a bridge in communication with the input port, the output port, and the memory, each of the MCD pairs including the input port of the first MCD in communication with the pair input, the output port of the first MCD in communication with the input port of the second MCD, the output port of the second MCD in communication with the pair output, and the bridge adapted to receive a command and a data packet from the input port and adapted to execute in response to the command at least one of a transfer of a portion of the data packet from the input port to the memory, a transfer of a portion of the data packet from the input port to the output port, and a transfer of a portion of the memory packet from the memory to the output port.