Semiconductor device and method of forming protective coating material over semiconductor wafer to reduce lamination tape residue
View Patent ↗A semiconductor device has a build-up interconnect structure formed over an active surface of a semiconductor wafer containing a plurality of semiconductor die separated by a saw street. An insulating layer is formed over the interconnect structure. Bumps are formed over the interconnect structure. A protective coating material is deposited over the insulating layer and saw street. A lamination tape is applied over the coating material. A portion of a back surface of the semiconductor wafer is removed. A mounting tape is applied over the back surface. The lamination tape is removed while leaving the coating material over the insulating layer and saw street. A first channel is formed through the saw street extending partially through the semiconductor wafer. The coating material is removed after forming the first channel. A second channel is formed through the saw street and the mounting tape is removed to singulate the semiconductor wafer.
1. A method of making a semiconductor device, comprising:
providing a semiconductor wafer including a plurality of semiconductor die separated by a saw street;
forming a build-up interconnect structure over a first surface of the semiconductor wafer;
forming a first insulating layer over the build-up interconnect structure;
forming a plurality of bumps over the build-up interconnect structure;
depositing a protective coating material over the first insulating layer and the saw street;
applying a lamination tape over the protective coating material and the bumps;
removing a portion of a second surface of the semiconductor wafer opposite the first surface of the semiconductor wafer;
removing the lamination tape while leaving the protective coating material over the first insulating layer and the saw street;
forming a first channel through the saw street extending through the build-up interconnect structure and partially but not completely through the semiconductor wafer after removing the lamination tape; and
removing the protective coating material after forming the first channel.
2. The method of claim 1 , further including forming a second channel through the saw street extending completely through the semiconductor wafer, wherein the second channel is narrower than the first channel.
3. The method of claim 2 , further including singulating the semiconductor wafer.
4. The method of claim 1 , wherein the protective coating material reduces tape residue over the first insulating layer.
5. The method of claim 1 , wherein forming the build-up interconnect structure includes:
forming a plurality of conductive layers over the first surface of the semiconductor wafer; and
forming a second insulating layer between the conductive layers.
6. The method of claim 1 , wherein the protective coating material substantially covers the saw street and the first insulating layer around the bumps.
7. A method of making a semiconductor device, comprising:
providing a semiconductor wafer;
depositing a protective coating material over the semiconductor wafer;
applying a first support tape over the protective coating material;
removing a portion of a second surface of the semiconductor wafer opposite the first surface of the semiconductor wafer;
removing the first support tape while leaving the protective coating material over the semiconductor wafer;
forming a first channel extending partially through the semiconductor wafer; and
removing the protective coating material after forming the first channel.
8. The method of claim 7 , further including applying a second support tape over the second surface of the semiconductor wafer after removing the portion of the second surface of the semiconductor wafer.
9. The method of claim 8 , further including forming a second channel extending completely through the semiconductor wafer and partially through the second support tape.
10. The method of claim 9 , further including removing the second support tape to singulate the semiconductor wafer.
11. The method of claim 7 , further including:
forming a plurality of conductive layers over the first surface of the semiconductor wafer;
forming an insulating layer between the conductive layers; and
forming a plurality of bumps over the conductive layers.
12. The method of claim 7 , further including:
forming a build-up interconnect structure over the first surface of the semiconductor wafer; and
forming an insulating layer over the build-up interconnect structure.
13. The method of claim 12 , further including forming a plurality of bumps over the build-up interconnect structure.
14. A method of making a semiconductor device, comprising:
providing a semiconductor wafer;
depositing a protective coating material over the semiconductor wafer;
applying a first support tape over the protective coating material;
removing a portion of a second surface of the semiconductor wafer opposite the first surface of the semiconductor wafer;
removing the first support tape while leaving the protective coating material over the semiconductor wafer; and
removing the protective coating material.
15. The method of claim 14 , further including forming a first channel extending partially through the semiconductor wafer.
16. The method of claim 15 , further including forming a second channel extending completely through the semiconductor wafer.
17. The method of claim 16 , wherein the second channel is narrower than the first channel.
18. The method of claim 16 , further including singulating the semiconductor wafer.
19. The method of claim 14 , wherein the protective coating material reduces residue over the semiconductor wafer after removing the first support tape.
20. The method of claim 14 , further including:
forming a plurality of conductive layers over the first surface of the semiconductor wafer; and
forming an insulating layer between the conductive layers.
21. The method of claim 14 , further including:
forming a build-up interconnect structure over the first surface of the semiconductor wafer; and
forming an insulating layer over the build-up interconnect structure.
22. The method of claim 21 , further including forming a plurality of bumps over the build-up interconnect structure.
23. A method of making a semiconductor device, comprising:
providing a semiconductor wafer;
depositing a protective material over a first surface of the semiconductor wafer;
forming a first channel extending partially through the semiconductor wafer; and
removing the protective material after forming the first channel.
24. The method of claim 23 , further including forming the first channel extending partially through the semiconductor wafer using a laser.
25. The method of claim 23 , wherein the protective material further includes a water-soluble material.
26. The method of claim 23 , further including:
forming a build-up interconnect structure over the first surface of the semiconductor wafer; and
forming an insulating layer over the build-up interconnect structure.
27. The method of claim 26 , further including forming a plurality of bumps over the build-up interconnect structure.
28. The method of claim 23 , further including:
applying a lamination tape over the protective material;
removing a portion of a second surface of the semiconductor wafer opposite the first surface of the semiconductor wafer; and
removing the lamination tape while leaving the protective material over the first surface of the semiconductor wafer.