IP Library › Granted Patent US 7,887,883
Granted Patent B2
US 7,887,883 · App. 12/777,519 · Granted Feb 15, 2011

Composition and method for low temperature deposition of silicon-containing films

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Quick Facts
Patent No.
US 7,887,883
App. No.
12/777,519
Granted
Feb 15, 2011
Kind
B2
Abstract

This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups.

Claims (8)

1. A method of depositing a silicon-containing film on a substrate, comprising contacting the substrate with a composition comprising a disilane compound that is fully substituted with alkylamino (—NHR) and/or dialkylamino —N(R 2 )) functional groups, wherein each R is independently selected from consisting of C 3-5 alkyl, under vapor deposition conditions.

2. The method of claim 1 , wherein the silicon-containing film comprises a silicon nitride film.

3. The method of claim 1 , wherein said vapor deposition conditions comprise temperature less than 300° C.

4. The method of claim 1 , wherein the silicon-containing film comprises a low dielectric constant film.

5. The method of claim 1 , wherein the silicon-containing film comprises a high k gate silicate film.

6. The method of claim 1 , wherein said method is carried out to manufacture a semiconductor device.

7. The method of claim 1 , wherein the disilane compound is fully substituted with alkylamino (—NHR) functional groups.

8. The method of claim 1 , wherein the disilane compound is fully substituted with dialkylamino (—N(R 2 )) functional groups.

Assignments (8)
SECURITY INTEREST Recorded Jul 8, 2022
From: ENTEGRIS, INC.; ENTEGRIS GP, INC.; POCO GRAPHITE, INC.; CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: TRUIST BANK, AS NOTES COLLATERAL AGENT
Reel/Frame 060613/0072 →
ASSIGNMENT OF PATENT SECURITY INTEREST RECORDED AT REEL/FRAME 048811/0679 Recorded Nov 5, 2019
From: GOLDMAN SACHS BANK USA
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 050965/0035 →
SECURITY INTEREST Recorded Nov 13, 2018
From: ENTEGRIS, INC.; SAES PURE GAS, INC.
To: GOLDMAN SACHS BANK USA
Reel/Frame 048811/0679 →
RELEASE OF SECURITY INTEREST Recorded Nov 8, 2018
From: GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT
To: ENTEGRIS, INC.; POCO GRAPHITE, INC.; ATMI, INC.; ATMI PACKAGING, INC.; ADVANCED TECHNOLOGY MATERIALS, INC.
Reel/Frame 047477/0151 →
RELEASE OF SECURITY INTEREST Recorded Nov 8, 2018
From: GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT
To: ENTEGRIS, INC.; POCO GRAPHITE, INC.; ATMI, INC.; ATMI PACKAGING, INC.; ADVANCED TECHNOLOGY MATERIALS, INC.
Reel/Frame 047477/0032 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 4, 2015
From: ADVANCED TECHNOLOGY MATERIALS, INC.
To: ENTEGRIS, INC.
Reel/Frame 034894/0025 →
SECURITY INTEREST Recorded May 2, 2014
From: ENTEGRIS, INC.; POCO GRAPHITE, INC.; ATMI, INC.; ADVANCED TECHNOLOGY MATERIALS, INC.; ATMI PACKAGING, INC.
To: GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT
Reel/Frame 032812/0192 →
SECURITY INTEREST Recorded May 1, 2014
From: ENTEGRIS, INC.; POCO GRAPHITE, INC.; ATMI, INC.; ADVANCED TECHNOLOGY MATERIALS, INC.; ATMI PACKAGING, INC.
To: GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT
Reel/Frame 032815/0852 →