IP Library Granted Patent US 8,408,723
Granted Patent B2
US 8,408,723 · App. 12/787,474 · Granted Apr 2, 2013

Backlighting inductive touch buttons

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Quick Facts
Patent No.
US 8,408,723
App. No.
12/787,474
Granted
Apr 2, 2013
Kind
B2
Abstract

Backing lighting of induction touch keys is accomplished with a spacer layer surrounding an inductive touch sensor coil and a light source on a substrate, and light transmissive layer having a suspended metal disk proximate to the inductive touch sensor coil. A protective fascia may be placed over the light transmissive layer and spacer layer. When the light transmissive layer is displaced toward the inductive touch sensor coil the impedance value of the inductive touch sensor coil changes and the change is detected. Materials used that are translucent (light transmissive) may be continuous and solid, and opaque materials may have openings therein for transmission of light therethrough.

Claims (59)

1. A backlit inductive touch sensor key, comprising:

a substrate;

an inductive sense coil on the substrate;

a light source;

a spacer layer on the substrate and having an opening that surrounds the inductive sense coil and the light source; and

a over-layer having opening therein to allow light to pass therethrough from the light source, the over-layer is attached to the spacer layer and forms a light transmission cavity between the substrate and the over-layer; and

an over-mold button attached to a side of the over-layer opposite to the light transmission cavity, the over-mold button being light transmissive;

wherein when the over-mold button is biased toward the inductive sense coil, an impedance value of the inductive sense coil changes.

2. The backlit inductive touch sensor key according to claim 1 , further comprising a metal target attached on a face of the over-layer proximate to the inductive sense coil, wherein when the metal target is biased toward the inductive sense coil, the impedance value of the inductive sense coil changes.

3. The backlit inductive touch sensor key according to claim 1 , wherein the light source is at least one light emitting diode (LED).

4. The backlit inductive touch sensor key according to claim 3 , wherein the at least one LED is on a same side of the substrate as the inductive sense coil and illuminates the light transmission cavity.

5. The backlit inductive touch sensor key according to claim 3 , wherein the at least one LED is on an opposite side of the substrate as the inductive sense coil and illuminates the light transmission cavity.

6. The backlit inductive touch sensor key according to claim 3 , wherein the at least one LED is in the substrate and illuminates the light transmission cavity.

7. The backlit inductive touch sensor key according to claim 1 , wherein the over-layer is metal.

8. The backlit inductive touch sensor key according to claim 7 , wherein the metal over-layer is selected from the group consisting of aluminum, steel, stainless steel, copper, and titanium.

9. The backlit inductive touch sensor key according to claim 1 , wherein the over-layer is nonmetallic.

10. The backlit inductive touch sensor key according to claim 9 , wherein the nonmetallic over-layer is selected from the group consisting of plastic, Teflon, and polyamide.

11. The backlit inductive touch sensor key according to claim 1 , wherein the substrate is a printed circuit board.

12. A backlit inductive touch sensor key, comprising:

a substrate;

an inductive sense coil on the substrate;

a light source;

a spacer layer on the substrate and having an opening that surrounds the inductive sense coil and the light source; and

a flexible layer of light transmissive material, the flexible layer is over the inductive sense coil and light source, and is attached to the spacer layer wherein a light transmission cavity is formed between the substrate and the flexible layer;

wherein when the flexible layer is biased toward the inductive sense coil, an impedance value of the inductive sense coil changes.

13. The backlit inductive touch sensor key according to claim 12 , further comprising a metal target attached on a face of the flexible layer proximate to the inductive sense coil, wherein when the metal target is biased toward the inductive sense coil, the impedance value of the inductive sense coil changes.

14. The backlit inductive touch sensor key according to claim 12 , wherein the light source is at least one light emitting diode (LED).

15. The backlit inductive touch sensor key according to claim 14 , wherein the at least one LED is on a same side of the substrate as the inductive sense coil and illuminates the light transmission cavity.

16. The backlit inductive touch sensor key according to claim 14 , wherein the at least one LED is on an opposite side of the substrate as the inductive sense coil and illuminates the light transmission cavity.

17. The backlit inductive touch sensor key according to claim 14 , wherein the at least one LED is in the substrate and illuminates the light transmission cavity.

18. The backlit inductive touch sensor key according to claim 12 , further comprising an over-layer on the flexible layer.

19. The backlit inductive touch sensor key according to claim 18 , wherein the over-layer is made of light transmissive material.

20. The backlit inductive touch sensor key according to claim 18 , wherein the over-layer is made of light opaque material and has opening therein for light from the light source to pass therethrough.

21. The backlit inductive touch sensor key according to claim 18 , wherein the over-layer is metal.

22. The backlit inductive touch sensor key according to claim 21 , wherein the metal over-layer is selected from the group consisting of aluminum, steel, stainless steel, copper, and titanium.

23. The backlit inductive touch sensor key according to claim 18 , wherein the over-layer is nonmetallic.

24. The backlit inductive touch sensor key according to claim 23 , wherein the nonmetallic over-layer is selected from the group consisting of plastic, Teflon, and polyamide.

25. The backlit inductive touch sensor key according to claim 12 , wherein the flexible layer has opening therein for flexure and for light from the light source to pass therethrough.

26. The backlit inductive touch sensor key according to claim 12 , wherein the substrate is a printed circuit board.

27. A backlit inductive touch sensor key, comprising:

a substrate;

an inductive sense coil on the substrate;

a light source;

a spacer layer on the substrate and having an opening that surrounds the inductive sense coil and the light source;

a flexible fascia layer adapted to allow light therethrough, the flexible fascia layer is over the inductive sense coil and light source, and is attached to the spacer layer wherein a light transmission cavity is formed between the substrate and the flexible fascia layer;

alight translucent layer attached to aside of a portion of the flexible fascia layer facing and inside of the light transmission cavity; and

a metal target attached to a face of the light translucent layer proximate to the inductive sense coil;

wherein when the flexible fascia layer is biased toward the inductive sense coil, an impedance value of the inductive sense coil changes.

28. The backlit inductive touch sensor key according to claim 27 , wherein the light source is at least one light emitting diode (LED).

29. The backlit inductive touch sensor key according to claim 28 , wherein the at least one LED is on a same side of the substrate as the inductive sense coil and illuminates the light transmission cavity.

30. The backlit inductive touch sensor key according to claim 28 , wherein the at least one LED is on an opposite side of the substrate as the inductive sense coil and illuminates the light transmission cavity.

31. The backlit inductive touch sensor key according to claim 28 , wherein the at least one LED is in the substrate and illuminates the light transmission cavity.

32. The backlit inductive touch sensor key according to claim 27 , wherein the flexible fascia layer is made of light transmissive material.

33. The backlit inductive touch sensor key according to claim 27 , wherein the flexible fascia layer is made of light opaque material and has opening therein for light from the light source to pass therethrough.

34. The backlit inductive touch sensor key according to claim 27 , wherein the flexible fascia layer is metal.

35. The backlit inductive touch sensor key according to claim 34 , wherein the flexible metal fascia layer is selected from the group consisting of aluminum, steel, stainless steel, copper, and titanium.

36. The backlit inductive touch sensor key according to claim 27 , wherein the flexible fascia layer is nonmetallic.

37. The backlit inductive touch sensor key according to claim 36 , wherein the flexible nonmetallic fascia layer is selected from the group consisting of plastic, Teflon, and polyamide.

38. The backlit inductive touch sensor key according to claim 27 , wherein the substrate is a printed circuit board.

Assignments (16)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 16, 2025
From: MICROCHIP TECHNOLOGY INC.; MICROCHIP TECHNOLOGY IRELAND LIMITED; MICROSEMI CORPORATION; ATMEL CORPORATION; SILICON STORAGE TECHNOLOGY, INC.; MICROSEMI FREQUENCY AND TIME CORP.; MICROSEMI SEMICONDUCTOR ULC; MICROCHIP TECHNOLOGY GERMANY GMBH
To: CRESTONE IP MANAGEMENT, LLC
Reel/Frame 071991/0419 →
RELEASE OF SECURITY INTEREST Recorded Mar 14, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 060894/0437 →
RELEASE OF SECURITY INTEREST Recorded Mar 11, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059363/0001 →
RELEASE OF SECURITY INTEREST Recorded Mar 10, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059863/0400 →
RELEASE OF SECURITY INTEREST Recorded Mar 9, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059358/0001 →
RELEASE OF SECURITY INTEREST Recorded Feb 28, 2022
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED
Reel/Frame 059666/0545 →
RELEASE OF SECURITY INTEREST Recorded Feb 25, 2022
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059333/0222 →
SECURITY INTEREST Recorded Jun 4, 2021
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 057935/0474 →
SECURITY INTEREST Recorded Dec 24, 2020
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 055671/0612 →
SECURITY INTEREST Recorded Jun 5, 2020
From: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION
Reel/Frame 053468/0705 →
RELEASE OF SECURITY INTEREST Recorded May 30, 2020
From: JPMORGAN CHASE BANK, N.A, AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 053466/0011 →
SECURITY INTEREST Recorded Apr 24, 2020
From: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 053311/0305 →
SECURITY INTEREST Recorded Sep 18, 2018
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 047103/0206 →
SECURITY INTEREST Recorded Jun 25, 2018
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 046426/0001 →
SECURITY INTEREST Recorded Feb 10, 2017
From: MICROCHIP TECHNOLOGY INCORPORATED
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 041675/0617 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 26, 2010
From: PORTER, STEPHEN B.; CURTIS, KEITH
To: MICROCHIP TECHNOLOGY INCORPORATED
Reel/Frame 024441/0185 →