Semiconductor device and method of forming EMI shielding layer with conductive material around semiconductor die
A semiconductor device has a plurality of first semiconductor die mounted over an interface layer formed over a temporary carrier. An encapsulant is deposited over the first die and carrier. A flat shielding layer is formed over the encapsulant. A channel is formed through the shielding layer and encapsulant down to the interface layer. A conductive material is deposited in the channel and electrically connected to the shielding layer. The interface layer and carrier are removed. An interconnect structure is formed over conductive material, encapsulant, and first die. The conductive material is electrically connected through the interconnect structure to a ground point. The conductive material is singulated to separate the first die. A second semiconductor die can be mounted over the first die such that the shielding layer covers the second die and the conductive material surrounds the second die or the first and second die.
1. A method of making a semiconductor device, comprising:
providing a temporary carrier including an interface layer;
disposing a first semiconductor die over the interface layer with an active surface of the first semiconductor die oriented toward the interface layer;
depositing an encapsulant over the first semiconductor die;
forming a flat shielding layer over the encapsulant and a back surface opposite the active surface of the first semiconductor die;
forming a channel completely around the semiconductor die, through the flat shielding layer and encapsulant, and partially through the interface layer wherein a portion of the interface layer remains under the channel;
depositing conductive material in the channel completely around the semiconductor die and electrically connected to the flat shielding layer, the conductive material contacting a sidewall of the interface layer;
removing the temporary carrier and the interface layer to expose the active surface of the first semiconductor die and the conductive material including a sidewall of the conductive material; and
forming a build-up interconnect structure contacting the conductive material, encapsulant, and the active surface of the first semiconductor die by,
(a) forming a redistribution layer (RDL) over the encapsulant and contacting both the exposed conductive material and the active surface of the first semiconductor die, and
(b) forming an insulating layer over the RDL and contacting the exposed sidewall of the conductive material.
2. The method of claim 1 , further including electrically connecting the conductive material through the build-up interconnect structure to a ground point.
3. The method of claim 1 , further including providing side-by-side semiconductor die each covered by the flat shielding layer and surrounded by the conductive material.
4. The method of claim 1 , further including disposing a second semiconductor die over the first semiconductor die, wherein the flat shielding layer covers the second semiconductor die.
5. The method of claim 4 , wherein the conductive material surrounds the second semiconductor die.