Semiconductor device and method of forming RF FEM with IC filter and IPD filter over substrate
View Patent ↗A semiconductor device has a substrate and RF FEM formed over the substrate. The RF FEM includes an LC low-pass filter having an input coupled for receiving a transmit signal. A Tx/Rx switch has a first terminal coupled to an output of the LC filter. A diplexer has a first terminal coupled to a second terminal of the Tx/Rx switch and a second terminal for providing an RF signal. An IPD band-pass filter has an input coupled to a third terminal of the Tx/Rx switch and an output providing a receive signal. The LC filter includes conductive traces wound to exhibit inductive and mutual inductive properties and capacitors coupled to the conductive traces. The IPD filter includes conductive traces wound to exhibit inductive and mutual inductive properties and capacitors coupled to the conductive traces. The RF FEM substrate can be stacked over a semiconductor package containing an RF transceiver.
1. A method of making a semiconductor device, comprising:
providing a substrate; and
forming a radio frequency front end module (RF FEM) over the substrate, the RF FEM including,
(a) forming an inductor capacitor (LC) low-pass filter having an input coupled for receiving a transmit signal,
(b) forming a transmit/receive (Tx/Rx) switch having a first terminal coupled to an output of the LC low-pass filter,
(c) forming a diplexer having a first terminal coupled to a second terminal of the Tx/Rx switch and a second terminal for providing an RF signal, and
(d) forming an integrated passive device (IPD) band-pass filter having an input coupled to a third terminal of the Tx/Rx switch for receiving a receive signal and an output providing a filtered receive signal.
2. The method of claim 1 , wherein forming the IPD band-pass filter includes:
forming a first conductive trace wound to exhibit inductive properties and having first and second ends coupled to the input of the IPD band-pass filter;
forming a second conductive trace wound to exhibit inductive properties and having first and second ends coupled to the output of the IPD band-pass filter, the first conductive trace being placed in proximity to the second conductive trace to exhibit mutual inductive properties; and
forming a third conductive trace wound to exhibit inductive properties and having first and second ends, the third conductive trace being placed in proximity to the first and second conductive traces to exhibit mutual inductive properties.
3. The method of claim 2 , wherein the IPD band-pass filter further includes:
forming a first capacitor between the first and second ends of the first conductive trace;
forming a second capacitor between the first and second ends of the second conductive trace; and
forming a third capacitor between the first and second ends of the third conductive trace.
4. The method of claim 1 , wherein forming the LC low-pass filter includes:
forming a first conductive trace wound to exhibit inductive properties and having first and second ends coupled to the output of the LC low-pass filter; and
forming a second conductive trace wound to exhibit inductive properties and having first and second ends coupled to the input of the LC low-pass filter, the first conductive trace being placed in proximity to the second conductive trace to exhibit mutual inductive properties.
5. The method of claim 4 , wherein forming the IPD band-pass filter further includes:
forming a first capacitor between the first and second ends of the first conductive trace; and
forming a second capacitor between the first and second ends of the second conductive trace.
6. The method of claim 1 , further including:
providing an RF transceiver in a semiconductor package;
mounting the substrate containing the RF FEM over the semiconductor package; and
electrically connecting the RF FEM to the RF transceiver.
7. A method of making a semiconductor device, comprising:
providing a substrate; and
forming a radio frequency front end module (RF FEM) over the substrate, the RF FEM including,
(a) forming an inductor capacitor (LC) filter having an input coupled for receiving a transmit signal and an output providing a filtered transmit signal, and
(b) forming an integrated passive device (IPD) filter having an input coupled for receiving a receive signal and an output providing a filtered receive signal.
8. The method of claim 7 , wherein forming the RF FEM further includes:
forming a transmit/receive (Tx/Rx) switch having a first terminal coupled to the output of the LC filter; and
forming a diplexer having a first terminal coupled to a second terminal of the Tx/Rx switch and a second terminal for providing an RF signal.
9. The method of claim 7 , wherein forming the IPD filter includes:
forming a first conductive trace wound to exhibit inductive properties and having first and second ends coupled to the input of the IPD filter;
forming a second conductive trace wound to exhibit inductive properties and having first and second ends coupled to the output of the IPD filter, the first conductive trace being placed in proximity to the second conductive trace to exhibit mutual inductive properties; and
forming a third conductive trace wound to exhibit inductive properties and having first and second ends, the third conductive trace being placed in proximity to the first and second conductive traces to exhibit mutual inductive properties.
10. The method of claim 9 , wherein forming the IPD filter further includes:
forming a first capacitor between the first and second ends of the first conductive trace;
forming a second capacitor between the first and second ends of the second conductive trace; and
forming a third capacitor between the first and second ends of the third conductive trace.
11. The method of claim 7 , wherein forming the LC filter includes:
forming a first conductive trace wound to exhibit inductive properties and having first and second ends coupled to the output of the LC filter; and
forming a second conductive trace wound to exhibit inductive properties and having first and second ends coupled to the input of the LC filter, the first conductive trace being placed in proximity to the second conductive trace to exhibit mutual inductive properties.
12. The method of claim 11 , wherein forming the LC filter further includes:
forming a first capacitor between the first and second ends of the first conductive trace; and
forming a second capacitor between the first and second ends of the second conductive trace.
13. The method of claim 7 , further including:
providing an RF transceiver in a semiconductor package;
mounting the substrate containing the RF FEM over the semiconductor package; and
electrically connecting the RF FEM to the RF transceiver.
14. A method of making a semiconductor device, comprising:
providing a substrate;
forming an inductor capacitor (LC) filter over the substrate, the LC filter having an input coupled for receiving a transmit signal and an output providing a filtered transmit signal; and
forming an integrated passive device (IPD) filter over the substrate, the IPD filter having an input coupled for receiving a receive signal and an output providing a filtered receive signal.
15. The method of claim 14 , further including:
forming a transmit/receive (Tx/Rx) switch over the substrate, the Tx/Rx switch having a first terminal coupled to the output of the LC filter; and
forming a diplexer over the substrate, the diplexer having a first terminal coupled to a second terminal of the Tx/Rx switch and a second terminal for providing an RF signal.
16. The method of claim 14 , wherein forming the IPD filter includes:
forming a first conductive trace wound to exhibit inductive properties and having first and second ends coupled to the input of the IPD filter;
forming a second conductive trace wound to exhibit inductive properties and having first and second ends coupled to the output of the IPD filter, the first conductive trace being placed in proximity to the second conductive trace to exhibit mutual inductive properties; and
forming a third conductive trace wound to exhibit inductive properties and having first and second ends, the third conductive trace being placed in proximity to the first and second conductive traces to exhibit mutual inductive properties.
17. The method of claim 16 , wherein forming the IPD filter further includes:
forming a first capacitor between the first and second ends of the first conductive trace;
forming a second capacitor between the first and second ends of the second conductive trace; and
forming a third capacitor between the first and second ends of the third conductive trace.
18. The method of claim 14 , wherein forming the LC filter includes:
forming a first conductive trace wound to exhibit inductive properties and having first and second ends coupled to the output of the LC filter; and
forming a second conductive trace wound to exhibit inductive properties and having first and second ends coupled to the input of the LC filter, the first conductive trace being placed in proximity to the second conductive trace to exhibit mutual inductive properties.
19. The method of claim 18 , wherein forming the LC filter further includes:
forming a first capacitor between the first and second ends of the first conductive trace; and
forming a second capacitor between the first and second ends of the second conductive trace.
20. The method of claim 14 , further including:
providing an RF transceiver in a semiconductor package;
mounting the substrate containing the RF FEM over the semiconductor package; and
electrically connecting the RF FEM to the RF transceiver.