Semiconductor device and method of forming penetrable film encapsulant around semiconductor die and interconnect structure
View Patent ↗A semiconductor device has a plurality of bumps formed over a carrier. A semiconductor die is mounted to the carrier between the bumps. A penetrable film encapsulant layer having a base layer, first adhesive layer, and second adhesive layer is placed over the semiconductor die and bumps. The penetrable film encapsulant layer is pressed over the semiconductor die and bumps to embed the semiconductor die and bumps within the first and second adhesive layers. The first adhesive layer and second adhesive layer are separated to remove the base layer and first adhesive layer and leave the second adhesive layer around the semiconductor die and bumps. The bumps are exposed from the second adhesive layer. The carrier is removed. An interconnect structure is formed over the semiconductor die and second adhesive layer. A conductive layer is formed over the second adhesive layer electrically connected to the bumps.
1. A method of making a semiconductor device, comprising:
providing a penetrable film encapsulant layer;
pressing the penetrable film encapsulant layer over a semiconductor die and first interconnect structure to embed the semiconductor die and first interconnect structure within the penetrable film encapsulant layer; and
removing a first portion of the penetrable film encapsulant layer to expose the first interconnect structure while leaving a second portion of the penetrable film encapsulant layer around the semiconductor die and first interconnect structure.
2. The method of claim 1 , further including forming a second interconnect structure over the semiconductor die and second portion of the penetrable film encapsulant layer.
3. The method of claim 1 , wherein the penetrable film encapsulant layer includes a base layer, first adhesive layer, and second adhesive layer.
4. The method of claim 1 , further including curing the penetrable film encapsulant layer.
5. The method of claim 1 , further including forming a conductive layer over the second portion of the penetrable film encapsulant layer electrically connected to the first interconnect structure.
6. The method of claim 1 , wherein the first interconnect structure includes bumps or conductive pillars.
7. The method of claim 1 , further including:
stacking a plurality of semiconductor devices; and
electrically connecting the stacked semiconductor devices through the first interconnect structure.
8. A method of making a semiconductor device, comprising:
providing a penetrable film encapsulant layer;
pressing the penetrable film encapsulant layer over a semiconductor die and first interconnect structure to embed the semiconductor die and first interconnect structure within the penetrable film encapsulant layer while leaving a surface of the semiconductor die exposed; and
removing a first portion of the penetrable film encapsulant layer to expose the first interconnect structure while leaving a second portion of the penetrable film encapsulant layer around the semiconductor die and first interconnect structure.
9. The method of claim 8 , wherein the penetrable film encapsulant layer includes a base layer, first adhesive layer, and second adhesive layer.
10. The method of claim 8 , further including forming a conductive layer over the second portion of the penetrable film encapsulant layer electrically connected to the first interconnect structure.
11. The method of claim 8 , further including forming a second interconnect structure over the semiconductor die and second portion of the penetrable film encapsulant layer.
12. The method of claim 8 , further including:
stacking a plurality of semiconductor devices; and
electrically connecting the stacked semiconductor devices through the first interconnect structure and second interconnect structure.
13. A method of making a semiconductor device, comprising:
providing a carrier;
forming a first interconnect structure over the carrier;
disposing a semiconductor die over the carrier;
providing a penetrable film encapsulant layer;
pressing the penetrable film encapsulant layer over the semiconductor die and first interconnect structure to embed the semiconductor die and first interconnect structure within the penetrable film encapsulant layer;
removing a first portion of the penetrable film encapsulant layer to expose the first interconnect structure while leaving a second portion of the penetrable film encapsulant layer around the semiconductor die and first interconnect structure;
removing the carrier; and
forming a second interconnect structure over the semiconductor die and second portion of the penetrable film encapsulant layer.
14. The method of claim 13 , wherein the penetrable film encapsulant layer includes a base layer, first adhesive layer, and second adhesive layer.
15. The method of claim 13 , further including curing the penetrable film encapsulant layer.
16. The method of claim 13 , further including forming a conductive layer over the second portion of the penetrable film encapsulant layer electrically connected to the first interconnect structure.
17. The method of claim 13 , wherein the first interconnect structure includes bumps or conductive pillars.
18. The method of claim 13 , further including:
stacking a plurality of semiconductor devices; and
electrically connecting the stacked semiconductor devices through the first and second interconnect structures.
19. The method of claim 13 , further including forming bumps over contact pads on the semiconductor die prior to disposing the semiconductor die over the carrier.
20. A method of making a semiconductor device, comprising:
providing a temporary carrier;
forming a plurality of first bumps over the temporary carrier;
disposing a semiconductor die over the temporary carrier between the first bumps;
providing a penetrable film encapsulant layer including a base layer, first adhesive layer, and second adhesive layer;
pressing the penetrable film encapsulant layer over the semiconductor die and first bumps to embed the semiconductor die and first bumps within the first and second adhesive layers;
curing the penetrable film encapsulant layer;
separating the first adhesive layer and second adhesive layer to remove the base layer and first adhesive layer and leave the second adhesive layer around the semiconductor die and first bumps;
removing the temporary carrier; and
forming an interconnect structure over the semiconductor die and second adhesive layer.
21. The method of claim 20 , wherein the first bumps extend above the second adhesive layer.
22. The method of claim 20 , further including forming a plurality of second bumps over the interconnect structure.
23. The method of claim 20 , wherein the second adhesive layer is coplanar with the semiconductor die.
24. The method of claim 20 , further including forming a conductive layer over the second adhesive layer electrically connected to the first bumps.
25. The method of claim 20 , further including:
stacking a plurality of semiconductor devices; and
electrically connecting the stacked semiconductor devices through the first bumps and interconnect structure.