Semiconductor device and method of forming interposer frame electrically connected to embedded semiconductor die

1. A method of making a semiconductor device, comprising:

providing a carrier;

providing an interposer frame having a die opening in the interposer frame;

mounting the interposer frame over the carrier;

providing a first semiconductor die having an active surface and plurality of bumps formed over the active surface;

mounting the first semiconductor die over the carrier within the die opening in the interposer frame;

forming a plurality of bond wires between the first semiconductor die and interposer frame;

depositing an encapsulant over the interposer frame and first semiconductor die; and

forming an interconnect structure over the encapsulant and bumps of the first semiconductor die.

2. The method of claim 1 , wherein providing the interposer frame includes:

providing a substrate;

forming a plurality of conductive vias through the substrate;

forming a first conductive layer over a first surface of the substrate, the first conductive layer being electrically connected to the conductive vias; and

forming a second conductive layer over a second surface of the substrate opposite the first surface, the second conductive layer being electrically connected to the conductive vias.

3. The method of claim 1 , further including mounting a second semiconductor die over the first semiconductor die and interposer frame.

4. The method of claim 1 , wherein the second semiconductor die has an input/output count less than an input/output count of the first semiconductor die.

5. The method of claim 1 , further including forming a bump between interposer frame and interconnect structure.

6. The method of claim 1 , further including mounting a second semiconductor die over the first semiconductor die prior to forming the interconnect structure.

7. A method of making a semiconductor device, comprising:

providing a carrier;

mounting an interposer frame over the carrier;

mounting a first semiconductor die over the carrier disposed adjacent to the interposer frame;

forming a first interconnect structure between the first semiconductor die and interposer frame;

depositing an encapsulant over the interposer frame and first semiconductor die; and

forming a second interconnect structure over the encapsulant and first semiconductor die.

8. The method of claim 7 , further including mounting the first semiconductor die over the carrier within a die opening in the interposer frame.

9. The method of claim 7 , further including mounting the first semiconductor die over the interposer frame.

10. The method of claim 7 , wherein the first interconnect structure includes bumps or bond wires.

11. The method of claim 7 , further including mounting a second semiconductor die over the first semiconductor die prior to forming the first and second interconnect structure.

12. The method of claim 7 , further including mounting an electronic component over the first semiconductor die and interposer frame.

13. The method of claim 12 , wherein the electronic component includes a discrete passive device, semiconductor die, or stacked semiconductor die.

14. A method of making a semiconductor device, comprising:

providing an interposer frame;

mounting a first semiconductor die adjacent to the interposer frame;

forming a first interconnect structure between the first semiconductor die and interposer frame;

depositing an encapsulant over the interposer frame and first semiconductor die; and

forming a second interconnect structure over the encapsulant and first semiconductor die.

15. The method of claim 14 , further including mounting the first semiconductor die within a die opening in the interposer frame.

16. The method of claim 14 , further including mounting the first semiconductor die over the interposer frame.

17. The method of claim 14 , wherein the first interconnect structure includes bumps or bond wires.

18. The method of claim 14 , further including mounting an electronic component over the first semiconductor die and interposer frame.

19. The method of claim 18 , wherein the electronic component includes a discrete passive device, semiconductor die, or stacked semiconductor die.

20. The method of claim 18 , wherein the electronic component has an input/output count less than an input/output count of the first semiconductor die.

21. A semiconductor device, comprising:

an interposer frame;

a first semiconductor die mounted adjacent to the interposer frame;

a first interconnect structure formed between the first semiconductor die and interposer frame;

an encapsulant deposited over the interposer frame and first semiconductor die; and

a second interconnect structure formed over the encapsulant and first semiconductor die.

22. The semiconductor device of claim 21 , wherein the first semiconductor die is mounted within a die opening in the interposer frame.

23. The semiconductor device of claim 21 , wherein the first semiconductor die is mounted over the interposer frame.

24. The semiconductor device of claim 21 , wherein the first interconnect structure includes bumps or bond wires.

25. The semiconductor device of claim 21 , further including an electronic component mounted over the first semiconductor die and interposer frame, wherein the electronic component includes a discrete passive device, semiconductor die, or stacked semiconductor die and the electronic component has an input/output count less than an input/output count of the first semiconductor die.