Gluconic acid containing photoresist cleaning composition for multi-metal device processing
A microelectronic photoresist cleaning composition suitable for cleaning multi-metal microelectronic devices and to do so without any substantial or significant galvanic corrosion occurring when there is a subsequent rinsing step employing water.
1. A semi-aqueous, alkaline cleaning composition for cleaning a multi-metal microelectronic device, the composition consisting of:
(a) from about 10% to about 35% water;
(b) from about 5% to about 15% of at least one alkanolamine;
(c) from about 10% to about 50% solvent selected from the group consisting of N-methylpyrrolidinone or a mixture of N-methylpyrrolidinone and sulfolane;
(d) from about 2% to about 10% of gluconic acid or a compound producing gluconic acid by hydrolysis in water;
(e) from about 1% to about 8% of at least one oligoethylene glycol of the formula HO(CH 2 CH 2 O) n CH 2 CH 2 OH wherein n is 1 or more; and
(f) optionally from about 10% to about 40% of at least one diethylene glycol monoalkyl ether wherein the alkyl group contains from 1 to 4 carbon atoms;
wherein the percentages are weight percent based on the total weight of the composition and when the percentage of alkanolamine is equal to or less than 6% the amount of N-methylpyrrolidinone solvent in the composition is 20% or more, and when the percentage of alkanolamine is 9% or more the amount on N-methyl pyrrolidinone may be equal to or less than 20%.
2. A semi-aqueous, alkaline cleaning composition of claim 1 consisting of
(a) from about 10% to about 30% water;
(b) from about 6% to about 10% of at least one alkanolamine;
(c) from about 20% to about 50% of solvent;
(d) from about 2% to about 6% of gluconic acid or compound producing gluconic acid by hydrolysis in water;
(e) from about 2% to about 6% oligoethylene glycol of the formula HO(CH 2 CH 2 O) n CH 2 CH 2 OH wherein n is 1, 2, 3 or 4; and
(f) from about 20% to about 30% of at least one diethylene glycol monoalkyl ether.
3. A semi-aqueous, alkaline cleaning composition of claim 2 wherein:
the alkanolamine consists of mono isopropanol amine;
the oligoethylene glycol consists of tetraethylene glycol; and
the diethylene glycol monoalkyl ether consists of diethylene glycol monomethyl ether.
4. A semi-aqueous, alkaline cleaning composition of claim 2 consisting of
15% to 30% water;
6% to 8% mono isopropanol amine;
from 10% to 30% N-methylpyrrolidinone and 0% to 20% sulfolane;
2% to 6% gluconic acid;
3% to 5% oligoethylene glycol; and
20% to 30% diethylene glycol monomethyl ether.
5. A semi-aqueous, alkaline cleaning composition of claim 1 consisting of
about 28% water;
about 6% mono isopropanol amine;
about 10% sulfolane and 20% N-methylpyrrolidinone;
about 3% gluconic acid;
about 5% tetraethylene glycol; and
about 28% diethyleneglycol monomethyl ether.
6. A semi-aqueous, alkaline cleaning composition of claim 1 consisting of
about 25% water;
about 7% diethanolamine;
about 40% N-methylpyrrolidinone;
about 5% gluconic acid δ-lactone;
about 3% tetraethylene glycol; and
about 20% diethylene glycol monomethyl ether.
7. A process for cleaning a multi-metal microelectronic device comprising contacting the device with a cleaning composition of claim 1 for a time and at a temperature to accomplish the cleaning of the device.
8. The process according to claim 7 wherein the cleaning is conducted at a temperature of about 50° C. to about 60° C.
9. A process for cleaning a multi-metal microelectronic device comprising contacting the device with a cleaning composition of claim 2 for a time and at a temperature to accomplish the cleaning of the device.
10. A process for cleaning a multi-metal microelectronic device comprising contacting the device with a cleaning composition of claim 3 for a time and at a temperature to accomplish the cleaning of the device.
11. A process for cleaning a multi-metal microelectronic device comprising contacting the device with a cleaning composition of claim 4 for a time and at a temperature to accomplish the cleaning of the device.
12. A process for cleaning a multi-metal microelectronic device comprising contacting the device with a cleaning composition of claim 5 for a time and at a temperature to accomplish the cleaning of the device.
13. A process for cleaning a multi-metal microelectronic device comprising contacting the device with a cleaning composition of claim 6 for a time and at a temperature to accomplish the cleaning of the device.