Granted Patent B2

US 8,236,097 · App. 13/028,193 · Granted Aug 7, 2012

Abstract

Claims (20)

1. A composition comprising a disilane compound that is fully substituted with dialkylamino (—N(R 2 )) functional groups, wherein each R is independently selected from the group consisting of C 3 -C 5 alkyl, further comprising a solvent for said disilane compound.

2. The composition of claim 1 , wherein said solvent comprises a hydrocarbon solvent.

3. The composition of claim 1 , wherein said solvent comprises an alkylamine solvent.

4. A method of forming a silicon-containing film on a substrate, comprising contacting the substrate under vapor deposition conditions with a composition comprising a disilane compound that is fully substituted with dialkylamino (—N(R 2 )) functional groups, wherein each R is independently selected from the group consisting of C 3 -C 5 alkyl, wherein the vapor deposition conditions comprise temperature in a range of from 350° C. to 500° C.

5. A method of forming a silicon-containing film on a substrate, comprising contacting the substrate under vapor deposition conditions with a composition comprising a disilane compound that is fully substituted with dialkylamino (—N(R 2 )) functional groups, wherein each R is independently selected from the group consisting of C 3 -C 5 alkyl, wherein the substrate is contacted in said contacting with a co-reactant selected from the group consisting of:

oxygen;

ozone;

CO 2 ;

nitrogen;

ammonia;

compounds of the formula R 3 Si—N 3 wherein each R is independently selected from C 1 -C 3 alkyl;

compounds of the formula R—N═NR′ wherein each R is independently selected from C 1 -C 3 alkyl and R′ is R or H;

compounds of the formula R—N═N + ═NR′ wherein each R is independently selected from C 1 -C 3 alkyl and R′ is R or H;

dinitrogen oxide;

hydrogen;

silane;

disilane;

hafnium sources; and

zirconium sources and

wherein the silicon-containing film comprises a high k gate silicate film.

Assignments (8)